Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Lamination-type solid electrolytic capacitor

Abstract: PURPOSE: To suppress the occurrence of leakage current by providing a connection point etc., consisting of a valve operation metal surface at the anode part of a solid electrolytic capacitor element and joining each contact, anode parts, and anode lead terminals with a conductive material. CONSTITUTION: A contact 7 consisting of a valve operation metal surface is provided at an anode part 3 of each capacitor element 2. Each capacitor element 2 is placed on a lead terminal 1 by aligning the direction. Then, the anode parts 3 and the anode parts 3 and an anode lead leading part 1a are connected to the contact 7. Then, the area between the anode parts is filled with a conductive material 6 for connecting in one piece. On the other hand, the bottom part of the cathode part 4 of the laminated capacitor element 2 and the anode lead leading part 1b are electrically and mechanically connected by conductor paste, solder etc. The solid electrolytic capacitor element is put into practical applications after performing sealing formation by a transfer molding machine etc., by an encapsulating resin 5 such as epoxy resin, thus improving the leakage current value. COPYRIGHT: (C)1996,JPO

Integrated circuit with a capacitor comprising an electrode

Abstract: A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.

Non-electrolyte tantalum electrolytic capacitor positive and negative electrode patch welding process

Abstract: The invention provides a non-electrolyte tantalum electrolytic capacitor positive and negative electrode patch welding process. According to the process, a positive lead and a negative lead of the electrolytic capacitor are completely removed; and then the positive and negative patches are fixed on the positive and negative ends of the electrolytic capacitor through electrolytic capacitor plasma ball welding, electrolytic capacitor patch spot welding and electrolytic capacitor patch full welding, so that the non-electrolytic tantalum electrolytic capacitor with the positive and negative patchfixed structure is obtained. The fixed structure of the positive and negative patches is obtained by adopting the process disclosed by the invention, so that the contact area of the product and a circuit board is increased when the product is welded. The mechanical strength of the product in the use process is increased, and the use reliability of the product in the structure is ensured. Operationis convenient, the production efficiency can be greatly improved, and the product percent of pass is increased.

High capacitance density thin film integrated tantalum pentoxide decoupling capacitors

Abstract: The process development and analysis of a multilayered thin film integrated capacitor is presented. Thin film integrated capacitors show great promise as IC power supply decoupling capacitors. Their low intrinsic inductance allows them to deliver fast switching high currents to the IC. However, current thin film capacitors are limited in capacitance due to the limitation of substrate area in boards or packages. Generally, there is not enough area available to produce the capacitance needed so that integrated capacitors can completely replace discretes. In this paper a multilayer thin film integrated capacitor design was discussed. The details of the multilayer process was described, as well as process challenges and preliminary results of the research. Currently capacitance densities in the range of 0.4 /spl mu/P/cm/sup 2/ have been obtained with a two layer process.

Solid electrolytic capacitors having an additional insulated layer formed on the dielectric layer

Abstract: To improve the voltage breakdown and leakage current of solid electrolytic capacitors, the dielectric layer is reenforced by an additional layer of silicon nitride, silicon dioxide or increasing the thickness of the original dielectric layer.