Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

Abstract: Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al–ZrO2–Zr (metal–insulator–metal) structure, and a high capacitance density (0.6 µF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 ×10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting ln (J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole–Frenkel effect, irrespective of the oxide thickness.

Laminated ceramic capacitor and manufacturing method thereof

Abstract: PROBLEM TO BE SOLVED: To enable to realize high capacitance, even if dielectric powder of fine particles is used in order to realize thin layer and multi-layering of a ceramic dielectric layer. SOLUTION: The laminate ceramic capacitor is provided with an effective section 1a where ceramic dielectric layers 7 and internal electrode layers 9 are alternately laminated, a capacitor body 1 consisting of a protective layer 1b of the ceramic dielectric layers 7 formed on upper and lower surfaces in a laminating direction of the effective section 1a, and an external electrode 3 formed on both the ends of the capacitor body 1. In this capacitor, the average grain size of a crystal grain 11, forming the ceramic dielectric layer 7 of the protective layer 1b, is smaller than the average grain size of a crystal grain 11 forming the ceramic dielectric layer 7 of the effective region 1a, the capacitor body 1 has a side surface that is perpendicular to a magnetism opposite to the external electrode is bent like a recess, and its residual compressive stress is 250 MPa or higher. COPYRIGHT: (C)2007,JPO&INPIT

Method and system for determining the resistance of the dielectric in a capacitor

Abstract: A rapid and accurate indication of the resistance of the dielectric in a capacitor with respect to a minimum acceptable value is obtained by connecting the capacitor in a feedback circuit of a high gain amplifier between an output and an input thereof. Initially, the capacitor is rapidly charged through a variable resistance connected to the input of the amplifier, until the charge on the capacitor is equal to a set value, such as its rated voltage. The variable resistance then is abruptly increased to a predetermined value that will maintain the charge on an acceptable capacitor at the set charge value. The voltage output of the amplifier then is monitored to ascertain stability, further charging or discharging of the capacitor, to provide an indication as to whether the capacitor''s dielectric resistance is at, above or below the minimum acceptable value, respectively.

Capacitor with oxygenated metal electrodes and high dielectric constant materials

Abstract: A stabilized capacitor using high dielectric constant dielectric materials, such as Ta2O5 and BaxSr(1-x)TiO3, and methods of making such capacitors are provided. A preferred method includes chemical vapor depositing a metal electrode, oxygen doping the metal electrode, oxidizing a surface of the oxygen doped metal electrode, depositing a high dielectric constant oxide dielectric material on the oxidized oxygen-doped metal electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.

Anomalous Dielectric Dispersion in Tantalum Oxide Films Prepared by RF Sputtering

Abstract: Tantalum oxide thin films prepared by rf sputtering show anomalous dielectric dispersion in the low frequency range Very high dielectric constant and dielectric loss (tan δ) are observed in the frequency range below 10 kHz The dielectric loss (tan δ) peak shifts toward higher frequencies with temperature In addition, this peak shows strong thickness dependence which excludes the possibility of ordinal dipolar polarization These characteristics are explained in terms of interfacial polarization based on the Maxwell-Wagner mechanism The thickness of the aluminum oxide blocking layer on the electrode surface has been evaluated to be approximately 38 nm from experimental results