Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Method of forming a pair of capacitors having a common capacitor electrode, method of forming DRAM circuitry, integrated circuitry and DRAM circuitry

Abstract: A method of forming a pair of capacitors having a common capacitor electrode includes forming a pair of spaced first capacitor electrodes within insulating material. The first electrodes have uppermost surfaces which are below an uppermost surface of the insulating material. Some of the insulating material is removed about the first capacitor electrodes and a path is provided within the insulating material lower than its uppermost surface between the spaced first electrodes. A capacitor dielectric layer is formed over the first capacitor electrodes. A second capacitor electrode layer is formed over the capacitor dielectric layer common to the spaced first capacitor electrodes and within the path. A method of forming DRAM circuitry includes forming an array of capacitor storage node electrodes over a substrate. A capacitor cell plate pattern is formed over the substrate. Conductive material is deposited over the substrate and into the capacitor cell plate pattern. The conductive material is polished outwardly of the pattern. In one implementation, a capacitor dielectric layer and a common cell plate layer are formed over the capacitor storage node electrodes. The cell plate layer is polished to form bit contact regions therethrough. Integrated circuitry formed by these and other methods is claimed.

Capacitor constructions comprising perovskite-type dielectric materials, and methods of forming capacitor constructions comprising perovskite-type dielectric materials

Abstract: The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The invention also includes a method of forming a capacitor construction. A capacitor electrode is provided, and a perovskite-type dielectric material is chemical vapor deposited over the first capacitor electrode. The depositing includes flowing at least one metal organic precursor into a reaction chamber and forming a component of the perovskite-type dielectric material from the precursor. The precursor is exposed to different oxidizing conditions during formation of the perovskite-type dielectric material so that a first region of the dielectric material has more amorphous character than a second region of the dielectric material.

Corresponding capacitor arrangement and method for making the same

Abstract: The invention relates to a method for producing a capacitor arrangement, and to a corresponding capacitor arrangement, wherein the first insulating layer is formed at the surface of a carrier substrate and a first capacitor electrode with a multiplicity of interspaced first interconnects is produced in said insulating layer. Using a mask layer, partial regions of the first insulating layer are removed for the purpose of uncovering the multiplicity of first interconnects, and after the formation of a capacitor dielectric at the surface of the uncovered first interconnects, a second capacitor electrode is formed with a multiplicity of interspaced second interconnects lying between the first interconnects coated with capacitor dielectric. This additionally simplified production method enables self-aligning and cost-effective production of capacitors having a high capacitance per unit area and mechanical stability.

Method for making high k dielectric material with low k dielectric sheathed signal vias

Abstract: A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.