Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Method for forming a capacitor dielectric and method for manufacturing capacitor using the capacitor dielectric

Abstract: A method for forming a capacitor dielectric includes depositing a zirconium oxide layer, performing a post-treatment on the zirconium oxide layer such that the zirconium oxide layer has a tetragonal phase, and depositing a tantalum oxide layer over the zirconium oxide layer such that the tantalum oxide layer has a tetragonal phase.

Capacitor with a dielectric between a via and a plate of the capacitor

Abstract: In a particular embodiment, a device includes a substrate, a via that extends at least partially through the substrate, and a capacitor. A dielectric of the capacitor is located between the via and a plate of the capacitor, and the plate of the capacitor is external to the substrate and within the device.

All-solid-state electric double layer capacitor

Abstract: Disclosed is an all-solid-state electric double layer capacitor comprising a solid electrolyte and a current collector, wherein the solid electrolyte is an inorganic solid electrolyte. Such a capacitor has high capacity and is free from any fear of leakage of an electrolytic solution, and also ensures high heat resistance and enables a low process cost.

Reliability studies on Ta2O5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization

Abstract: The temperature dependence of leakage current for tantalum oxide metal-insulator-metal capacitors has been investigated over the temperature range 20–160 °C The leakage current shows an increase with temperature and the conduction mechanism at medium to high electric fields is in agreement with the modified Poole–Frenkel model The activation energy of the dominant deep trapping center in the oxide is calculated using this model Constant voltage and constant current stress have been applied to the devices and the effect of stress conditions on leakage current, breakdown voltage, and high frequency capacitance-voltage have been investigated Early oxide breakdown or time-dependent dielectric breakdown was observed during constant voltage and constant current stress, in which the former is a function of stress time and applied voltage or current There is an increase in leakage current with time during the constant voltage stress, presumably due to generation of positive defect states This is also appare