Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Nb solid electrolytic capacitor and method for preparing the same

Abstract: An Nb solid electrolytic capacitor is disclosed which comprises: an anode body made from an Nb-based material, the anode body having a nitrogen content of about 7,500 ppm to about 47,000 ppm; a dielectric layer formed over the surface of the anode body; a solid electrolyte layer formed on the dielectric layer; and a cathode body formed on the surface of the solid electrolyte layer. The Nb solid electrolytic capacitor shows small bias dependence. A method for preparing the same is also disclosed which comprises steps of: forming an anode body from an Nb-based material, the anode body having a nitrogen content of about 7,500 ppm to about 47,000 ppm; forming a dielectric layer over the surface of the anode body; forming a solid electrolyte layer on the dielectric layer; and forming a cathode body on the electrolyte layer.

Integrated nano-farad capacitors and method of formation

Abstract: A high value capacitance per unit area capacitor is fabricated on a substrate 1 by converting a portion of a primary function anti-reflecting conducting layer 36 to a high value dielectric layer 37 by partially oxidizing the conducting layer to form the dielectric layer. The resultant combination is sandwiched between two metal layer electrodes 35 and 55 to complete the capacitor structure.

Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor

Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

Solid Electrolytic Capacitor for Use in High Voltage Applications

Abstract: A solid electrolytic capacitor that contains an anode body formed from an electrically conductive powder and a dielectric coating located over and/or within the anode body is provided. The present inventors have discovered a technique that is believed to substantially improve the uniformity and consistency of the manganese oxide layer. This is accomplished, in part, through the use of a dispersant in the precursor solution that helps minimize the likelihood that the manganese oxide precursor will form droplets upon contacting the surface of the dielectric. Instead, the precursor solution can be better dispersed so that the resulting manganese oxide has a “film-like” configuration and coats at least a portion of the anode in a substantially uniform manner. This improves the quality of the resulting oxide as well as its surface coverage, and thereby enhances the electrical performance of the capacitor.

Capacitor having improved electrodes

Abstract: Capacitor material for use in forming capacitors, is disclosed. More specifically, the invention is directed to capacitors formed from this material that have one or more discrete electrodes (314), each electrode (314) being exposed to at least two thicknesses of dielectric material (300). These electrodes (314) are surrounded by wider insulative material (312) such that the material can be cut, or patterned into capacitors having specific values. A single electrode can form a small value capacitor while still providing a larger conductive area for attaching the capacitor to associated circuitry. The thin dielectric (310) can be a tunable material so that the capacitance can be varied with voltage. The tunability can be increased by adding thin electrodes that interact with direct current.