Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Dielectric composition, multilayer ceramic capacitor using the same, and method for manufacturing multilayer ceramic capacitor

Abstract: A dielectric composition includes a base main component including Ba and Ti and an accessory component, wherein a ratio of domain width/grain size of the dielectric composition is in the range of 0 to 0.2, a multilayer ceramic capacitor using the same, and a method for manufacturing a multilayer ceramic capacitor. It is possible to provide a dielectric composition that can implement a higher dielectric constant and good high temperature withstand voltage characteristics in the same grain size condition. It is expected that this effect can be effectively applied to the development of ultra high capacity MLCCs having a thin dielectric by implementing the same capacity while increasing the thickness of the dielectric than the case of applying the conventional dielectric material.

Solid state capacitors and method of manufacturing them

Abstract: The present invention concerns the field of solid state capacitors and is directed more particularly to a method for manufacturing solid state electrolytic capacitors formed from porous conductive metal oxide anode bodies and having a cathode layer of conducting polymer, and capacitors thereby formed. There is disclosed a solid state capacitor comprising a porous anode body, a dielectric layer formed on surfaces of the porous anode body and a cathode layer formed on the dielectric layer, characterised by the combination of the anode body being formed from an electrically conducting ceramic material and the cathode layer being formed from an electrically conductive polymer material. The conducting ceramic material may be a metal oxide or nitride.

DRAM capacitor having lower electrode and dielectric layer of same planar shape preformed on field DRAM oxide film

Abstract: In a DRAM memory cell built in a semiconductor device, a capacitor is formed on a field oxide film so as not to superpose upon a transistor. An area of the field oxide film can therefore be used efficiently. Since the capacitor can be formed before the transistor is formed, high temperature treatment in forming the capacitor does not give adverse effects on the transistor characteristics. The capacitor dielectric film can be made of material of a high dielectric constant. The capacitor dielectric layer and lower electrode are formed by patterning in succession with the same etching mask. The gate electrode is formed at the same time when the upper capacitor electrode is formed. At the same time when the gate oxide film is formed, an oxide film is formed also on the surface of the capacitor dielectric layer. Pin holes in the dielectric layer are buried by this oxidation. With a reduced number of processes, the additional number of manufacture processes for built-in memory cell in addition to the manufacture processes of logic circuit can be made small. A semiconductor device and its manufacture method are provided which have less load on processes and a small memory cell size.

Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric

Abstract: We summarise the main performances of tantalum oxide films fabricated by anodic oxidation of tantalum nitride and tantalum silicide with thickness ranging from 100 to 4500 A. These films exhibit greatly improved leakage currents, breakdown voltage and very low defect density, thus allowing the fabrication of large area capacitors. Thermal treatments at temperatures up to 400°C do not degrade the insulator. We have proposed a set of selection guides to select the more appropriate process parameter values and electrode materials for a given application of these capacitors. Leakage currents in the insulator under thermal stress have been carefully studied in order to determine the nature and physical origin of the dominant conduction mechanisms in the insulator. We have found noticeable differences in the dominant conduction mechanisms for thin and thick anodic tantalum pentoxide films. These differences are explained in terms of the thickness dependence of the insulator layer structure. We have characterised the physical nature of the conduction mechanisms in the dielectric films. Poole–Frenkel effect and modified Poole–Frenkel effect from defect in the insulator are suggested. Finally, we report on conductance transient measurements ( G – t ) carried out on films of tantalum oxide fabricated by anodic oxidation of tantalum nitride and tantalum silicide with thickness ranging from 100 to 4500 A. One of the causes of the good properties of anodic tantalum pentoxide is the presence of nitrogen atoms in the dielectric. The influence of the nitrogen content on the anodisation precursor is showed up along the paper.

Non volatile data storage through dielectric breakdown

Abstract: A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.