Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Semiconductor memory device and method of fabricating the same

Abstract: A semiconductor memory device is provided, which makes it possible to increase the capacitance of capacitors in the capacitor section without degrading the withstand voltage of the capacitor dielectric. This device comprises a memory cell section including floating-gate type transistors and a capacitor section including capacitors. The memory cell section and the capacitor section are formed on a semiconductor substrate. Each of the transistors has a first gate dielectric, a floating gate, a second gate dielectric, and a control gate. Each of the capacitors has a lower electrode, a capacitor dielectric, and an upper electrode. A first part of the capacitors is/are designed to be applied with a first voltage and a second part thereof is/are applied with a second voltage on operation, where the first voltage is lower than the second voltage. Each of the first part of the capacitors has a recess formed on the lower electrode, thereby increasing its capacitance.

Graded insulator thin film capacitor and method of making

Abstract: A thin film capacitor suitable for microelectronic circuit applications using aluminum as one electrode and any suitable metal, such as gold, as the other electrode. The dielectric is a metallic oxide of high dielectric constant, such as Ta205, contacted directly by the gold electrode but having a thin film of A1203 interposed between it and the aluminum electrode. The relatively high barrier of the A1-A1203 interface prevents the injection of electrons from the metal into the dielectric and greatly reduces the dissipation and rectifying tendency of the capacitor.

On-chip decoupling capacitor with bottom hardmask

Abstract: An on-chip vertically stacked decoupling capacitor includes a hardmask film formed between the capacitor dielectric and the lower electrode. The manufacturing process used to form the capacitor takes advantage of the hardmask film and enables the capacitor to be formed over a low-k dielectric material. Attack of the underlying low-k dielectric material is suppressed during the etching and stripping processes used to form the capacitor, due to the presence of the hardmask. The low-k dielectric film provides for a reduced parasitic capacitance between adjacent conductive wires formed in the low-k dielectric material and therefore provides for increased levels of integration.

Method of fabricating semiconductor device with capacitor

Abstract: A fabrication method of a semiconductor device with a capacitor is provided, which prevents leakage current from increasing and dielectric breakdown resistance from decreasing during a CVD or dry etching process for forming an insulating film to cover the capacitor. In this method, a lower electrode of a capacitor is formed on a first insulating film. The first insulating film is typically formed on or over a semiconductor substrate. A dielectric film of the capacitor is formed on the lower electrode to be overlapped therewith. An upper electrode of the capacitor is formed on the dielectric film to be overlapped therewith. A second insulating film is formed to cover the capacitor by a thermal CVD process in an atmosphere containing no plasma at a substrate temperature in which hydrogen is prevented from being activated due to heat. A source material of the second insulating film has a property that no hydrogen is generated in the atmosphere through decomposition of the source material during the thermal CVD process.

Thin multi-terminal capacitor and method of manufacturing the same

Abstract: The capacitor element includes as an anode an aluminum foil in the form of a thin plate, an oxide layer formed as a dielectric on the surface of the anode, and a conductive polymer layer formed as a cathode on the dielectric. The capacitor is formed by drawing terminals in arrays from the capacitor element. On the upper side of the capacitor element is provided an embossed copper foil 11 for suppressing deformation of the capacitor element. The anode terminals and the cathode terminals are drawn to the lower side of the capacitor element. The anode terminals and the cathode terminals are alternately formed at the same pitch in the x-direction and the y-direction, so that the heteropolar terminals are disposed at the adjacent positions with respect to any one of the terminals.