Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Capacitor with conductively doped Si-Ge alloy electrode

Abstract: Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor includes a capacitor dielectric layer including Ta 2 O 5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta 2 O 5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta 2 O 5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode includes a conductive metal oxide. A more preferred second capacitor electrode includes a conductive silicon including layer, over a conductive titanium including layer, over a conductive metal oxide layer. A preferred first capacitor electrode includes a conductively doped Si—Ge alloy. Preferably, a Si 3 N 4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.

The equivalent series resistance in electrolytic capacitors

Abstract: The analysis of electrolytic capacitors as a distributed network is examined. The parameters contributing to the equivalent series resistance (E.S.R.) have been determined for various production capacitors at low and high frequencies.

Solid electrolytic capacitor element, method for manufacturing same, and solid electrolytic capacitor

Abstract: The invention produces a solid electrolytic capacitor using a solid electrolytic capacitor element by a method comprising forming a dielectric layer on the surface of an electric conductor, forming a semiconductor layer containing electrically conducting polymer on the dielectric layer and forming an electrode layer thereon, wherein the dielectric layer is formed by chemical formation in an electrolytic solution containing a dopant.

Characterization of thin film tantalum oxide capacitors on polyimide substrates

Abstract: Thin film tantalum oxide capacitors were fabricated on flexible polyimide substrates and characterized. The capacitance and dielectric constant were found to be independent of frequency from 100 MHz-1 GHz. The leakage current-voltage (I-V) characteristics of the virgin tantalum oxide capacitors were erratic. Both current-induced and temperature-induced annealing effects on virgin capacitors were observed. It was found that the defects of the capacitors depend, not only on the tantalum oxide dielectric, but also on the underlying electrode. Copper particulates embedded in the bottom electrode were the primary cause of electrical shorts. The conduction mechanism was found to be ionic. The ionic conduction activation energies are linearly dependent on the applied electric field, ranging from 0.47 eV for an electric field of 0.13 MV/cm to 0.38 eV for 0.73 MV/cm.

Method of manufacturing a semiconductor device having trenches for isolation and capacitor

Abstract: At least not less than one capacitor formation trench providing an uneven surface is formed on the surface of a capacitor formation region. Thus, the surface area of a capacitor is increased, which enables improvement of the capacitance of the capacitor is increased, which enables improvement of the capacitance of the capacitor per unit area. Further, by forming the capacitor formation trench and an element formation trench that are formed in the surface of the semiconductor substrate by the same step, it is possible to simplify the manufacturing process. Whereas, a dielectric film of the capacitor in the capacitor formation region and a high-voltage insulating film in a MISFET formation region are formed by the same step; alternatively, the dielectric of the capacitor in the capacitor formation region and a memory gate interlayer film between a polysilicon layer and a polysilicon layer in the memory cell formation region are formed by the same step.