Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Method of depositing gate dielectric, method of preparing mis capacitor, and mis capacitor

Abstract: The present invention relates to a method of depositing a gate dielectric, a method of preparing a MIS capacitor and the MIS capacitor. In the method of depositing the gate dielectric, a semiconductor substrate surface is preprocessed with oxygen plasma and nitrogen-containing plasma to form a nitrogen-containing oxide layer thereon. Then, a high-k gate dielectric layer is grown on the nitrogen-containing oxide layer surface by a plasma-enhanced atomic layer deposition process, and the oxide layer converts during the gate dielectric layer growth process into a buffer layer of a dielectric constant higher than SiO2. Then, a metal electrode is formed on both an upper layer and a lower layer of the thus-formed semiconductor construction, so that a MIS capacitor is prepared. According to the present invention, the formation of the buffer layer enables the interface characteristics between semiconductor materials and high-k gate dielectric layers to be improved effectively, equivalent oxide thickness (EOT) to be reduced and electrical properties to be enhanced.

Feed-through type capacitor, electronic device using it, and its mounting method

Abstract: PURPOSE: To provide a through type capacitor which is lessened in the occurrence of structural defects and can be applied to large-current circuits, electronic devices using the capacitor, and a method for mounting the capacitor. CONSTITUTION: The title capacitor 10 has a dielectric 2, conducting terminals 3, electrodes 4A and 4B for capacitor, terminal 4C for capacitor, internal electrode 5, a short-circuiting conductor 6 which short-circuits the terminals 3 with each other and has an equivalent series resistance smaller than that of the electrode 5. Since the conductor 6 is separately provided on the side face of the dielectric 2 without increasing the thickness of the electrode 5, the occurrence of structural defects becomes smaller. In addition, since the equivalent series resistance of the conductor 6 is smaller than that of the electrode 5, the heat generation of the capacitor 10 can be prevented and the capacitor 10 can be applied to large-current circuits even when the current to which the capacitor 10 is applied is large. COPYRIGHT: (C)1994,JPO

Tantalum-carbon hybrid capacitor with activated carbon

Abstract: An improved tantalum-carbon capacitor employs activated carbon in place of expensive metals to achieve a large surface area, and therefore higher capacitance, but at substantially lower cost than can be achieved using expensive metals to increase surface area. The capacitor includes a tantalum case, a tantalum anode, a dielectric layer on the anode, an electrolyte in contact with the dielectric layer on the anode, a layer of tantalum carbide on an inner surface of the case, and a layer of activated carbon between the layer of tantalum carbide and the electrolyte.

Solid electrolytic capacitor having current breaking function

Abstract: A solid electrolytic capacitor that can be miniaturized while maintaining the function for breaking current when excessive short-circuit current flows to a capacitor element. The solid electrolytic capacitor includes an anode body, a dielectric layer formed on the anode body, a conductive polymer layer formed on the dielectric layer, and a cathode layer formed on the conductive polymer layer. The conductive polymer layer contains thermally expandable graphite.