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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


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Patent
07 Jan 1999
TL;DR: In this paper, a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish.
Abstract: The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.

8 citations

Patent
06 Jun 1995
TL;DR: In this article, a polycrystalline silicon layer 1 as a lower electrode layer, a dielectric layer 112, and a polycane silicon layer 113 as an upper electrode layer.
Abstract: A capacitor includes a polycrystalline silicon layer 1 as a lower electrode layer, a dielectric layer 112, and a polycrystalline silicon layer 113 as an upper electrode layer. The dielectric layer 112 is formed by an oxynitride film 2, a silicon nitride film 3 and a top oxide film 4. A film thickness t 3 of the top oxide film 4 is controlled to be less than 20 Å. Capacitance of the capacitor can be increased while improving the duration of life of the dielectric layer, resulting in a highly reliable capacitor.

8 citations

Patent
18 Jun 1999
TL;DR: In this article, an electrolytic capacitor and its anode body using a laminate of plurality of sheets of valve metal foil, exhibiting excellent high-frequency response and lower inner impedance as a electrolytic capacitance, is described.
Abstract: The present invention provides an electrolytic capacitor and its anode body using a laminate of plurality of sheets of valve metal foil, exhibiting excellent high-frequency response and lower inner impedance as a electrolytic capacitor. The anode body for a electrolytic capacitor includes; a laminate of plurality of rectangular anode valve metal foil each which has dielectric layers of its metal oxide film anodized on roughened surfaces of each anode valve metal foil; and a fixing frame to clamp the laminate in the laminating direction to fix the laminate and connect electrically with anode layers of the laminated foil. Such an anode body may be used to be filled in the liquid electrolyte in the container to make a capacitor. Further, an electrolytic capacitor of the present invention includes: a laminate of plurality of anode valve metal foil each which has dielectric layers of its metal oxide film anodized on roughened surfaces of each anode valve metal foil and a cathode conductive polymer layer formed on the dielectric layer; a fixing frame to clamp the laminate in the laminating direction to fix the laminate; an anode conductor which is connected to a metal portion of the anode valve metal foil; and a cathode conductor which is connected to the cathode conductive polymer layers.

8 citations

Patent
14 Nov 1997
TL;DR: In this article, a method for manufacturing organic solid electrolytic capacitors was proposed, in which the shells of the capacitor elements are formed by performing the first aging treatment on the element 1 and the organic solids electrolytic capacitor is manufactured by performed the second aging treatment.
Abstract: PROBLEM TO BE SOLVED: To make a first aging treatment performable on the capacitor elements of an organic solid electrolytic capacitor, without deteriorating the productive efficiency even when a short-circuited capacitor element exists. SOLUTION: In a method for manufacturing organic solid electrolytic capacitor, the shells of capacitor elements 1 for an organic solid electrolytic capacitor, in which anode leads 10 are protruded from anode bodies and conductive layers 11 are arranged on cathode layers, are formed by performing the first aging treatment on the element 1 and the organic solid electrolytic capacitor is manufactured by performed the second aging treatment. The process for performing the first aging treatment in the manufacturing method includes a step of respectively arranging the elements 1 on a plurality of carbon sheet pieces 3 which are arranged in such a way that the pieces 3 are not electrically connected to each other so that the conductive layers 11 of the elements 1 may come into contact with the pieces 3, a set of connecting the anode lead 10 of each element 1 to the positive pole of a power source 6, a step of connecting each piece 3 to the negative pole of the power source 6 through a current limiter 5, and a step of impressing a voltage upon the elements 1 from the power source 6. COPYRIGHT: (C)1999,JPO

8 citations

Patent
26 Aug 2005
TL;DR: In this article, a capacitor is defined as a top conductive plate, a capacitor dielectric, and a bottom conductive plates that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a surface layer of patterned polysilicon.
Abstract: A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a layer of patterned polysilicon.

8 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834