Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Method for fabricating a three-dimensional capacitor

Abstract: A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.

Method for manufacturing multilayer ceramic capacitor

Abstract: A method for manufacturing a multilayer ceramic capacitor, in which internal electrodes printed on each of a plurality of dielectric sheets have reduced thicknesses using an absorption member, thereby allowing the multilayer ceramic capacitor to have a high capacity and be minimized. The method includes printing the internal electrodes on each of the dielectric sheets, and stacking the dielectric sheets, wherein the internal electrodes formed on each of the dielectric sheets have a reduced thickness by causing an absorptive member to contact the surface of each of the dielectric sheets provided with the internal electrodes and then separating the absorptive member from the surface so that portions of the internal electrodes having a designated thickness are eliminated, and the dielectric sheets provided with the internal electrodes having the reduced thickness are stacked to form a chip element.

Method of fabricating a mim capacitor with minimal voltage coefficient and a decoupling mim capacitor and analog/rf mim capacitor on the same chip with high-k dielectrics

Abstract: Methods for fabricating MIM capacitors with low VCC or decoupling and analog/RF capacitors on a single chip and the resulting devices are provided. Embodiments include forming: first and second metal lines in a substrate; a first electrode over, but insulated from, the first metal line; a first high-k dielectric layer on the first electrode, the first high-k dielectric layer having a coefficient α; a second electrode on the first high-k dielectric layer and over a portion of the first electrode; a second high-k dielectric layer on the second electrode, the second high-k dielectric layer having a coefficient α′ opposite in polarity but substantially equal in magnitude to α; a third electrode on the second high-k dielectric layer over the entire first electrode; and a metal-filled via through a dielectric layer down to the first metal line, and a metal-filled via through the dielectric layer down to the second metal line.

Solid electrolytic capacitor method of manufacturing the same

Abstract: A solid electrolytic capacitor using a conductive polymer compound as a solid electrolyte includes an anode body, a dielectric oxide coating formed on a surface of the anode body, a sulfone group-containing silanol derivative layer formed on at least a portion of the dielectric oxide coating by a coupling reaction, and a conductive polymer compound layer formed at least on the sulfone group-containing silanol derivative layer. With this, a solid electrolytic capacitor having a low ESR and a high capacitance and a method of manufacturing the solid electrolytic capacitor can be provided.

Niobia-stabilized tantalum pentoxide (NST) - novel high-k dielectrics for low-temperature process of MIM capacitors

Abstract: A novel dielectric - niobia-stabilized tantalum pentoxide (NST) - has been developed and applied in MIM capacitors. A 10% NST film has the effect of decreasing crystallization temperature by more than 150/spl deg/C and enhancing permittivity by 20%, while the leakage current stays low, compared with the properties of conventional tantalum pentoxide. These improved properties result from the fact that the doped niobia stabilizes a low-temperature hexagonal phase with high permittivity.