Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Highly Reliable Trench Capacitor With SiO2/Si3N4/SiO2 Stacked Film

Abstract: This paper deals with the reliability aspects of trench capacitors with the stacked film of SiO2/Si3N4/Sio2. Trench MOS capacitor shows larger leakage current under positive gate bias compared to plane MOS capacitor, because of the electric field enhancement at Si convex corner. In the case of the stacked film, trapped electrons in Si3N4 relax the electric field near Si corner and suppress the leakage current. The trench MIS capacitor also exhibits higher breakdown voltage of time-zero dielectric breakdown and longer mean time to failure (MTTF) of time dependent dielectric breakdown (TDDB) compared to trench MOS capacitor. Therefore, the stacked film is prominent as an insulator for trench capacitor.

Linear-hyperbranched polymers as performance additives for solid electrolytic capacitors

Abstract: Provided herein is an improved capacitor and a method for forming an improved capacitor. The method includes providing an anode and forming a dielectric on the anode. A linear-hyperbranched polymer is formed and a conductive polymer dispersion is prepared comprising at least one conducting polymer, one polyanion and the linear-hyperbranched polymer. A layer of the conductive polymer dispersion if formed wherein said dielectric is between the anode and the layer.

Method of manufacturing thin film capacitor

Abstract: A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

Evolution of Polymer Tantalum Capacitors

Abstract: The major advantage of Polymer Tantalum capacitors over other types of tantalum capacitors is their low equivalent series resistance (ESR), providing a higher capacitance stability with frequency and ripple current capability. When Polymer Tantalum capacitors were introduced to the market in mid 1990s, they were low voltage, leaky, and unreliable, which limited their applications to commercial electronics. Today, some types of polymer tantalum capacitors demonstrate the highest working voltage, lowest DC leakage, and highest reliability ever achieved in tantalum capacitors. These Polymer Tantalum capacitors combine outstanding performance and reliability with superior volumetric charge efficiency, which makes them cost effective and attractive for numerous applications, including mission critical ones. This paper is dedicated to the major technological breakthroughs and scientific discoveries that enabled the radical evolution of Polymer Tantalum capacitors.

Capacitive voltage sensor for medium voltage metering

Abstract: Two cylindrical capacitors of different values are created in series within a single dielectric resin body to form a capacitive voltage divider for a Medium Voltage sensor. By eliminating temperature variance both capacitors' permittivity is the same, and consistent measurements may be achieved. A first capacitor in the picofarad capacitance range is formed by a rod-shaped central primary conductor, one layer of a wrapped foil capacitor as a second conductor, and the resin body as a dielectric. The wrapped foil capacitor provides a second capacitor in the nanofarad capacitance range and is also embedded within the resin body. The resin body provides a dielectric material almost impervious to ambient changes in operating range and allows for a compact design. A precision resistor can be added in parallel to the first and second capacitors to damp transients and increase the transformation ratio.