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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Proceedings ArticleDOI
09 Jul 2017
TL;DR: In this article, a voltage feed-forward compensation scheme is proposed for overshoot reduction in a single-phase full-bridge rectifier with an active capacitor, where the impedance, equivalent capacitance, ESR, and ESL of the active capacitor can be specified.
Abstract: Conventional capacitors contribute to a considerable scale of system level size, cost and failure, and suffer from one or more issues on energy density, cost, and reliability. A two-terminal active capacitor, which has the same level of convenience as passive capacitors, is proposed recently to overcome the above issues. In this paper, the modeling of the active capacitor is investigated and a voltage feed-forward compensation scheme is proposed for overshoot reduction. Therefore, the impedance, equivalent capacitance, ESR, and ESL, of the active capacitor can be specified. A case study based on a single-phase full-bridge rectifier with an active capacitor demonstrates the theoretical analyses.

7 citations

Patent
05 Feb 1999
TL;DR: A dielectric capacitor (18-20), buried in a trench (17a, 17b) in an interlevel insulation (17, 18) is new as mentioned in this paper.
Abstract: A dielectric capacitor (18-20), buried in a trench (17a, 17b) in an interlevel insulation (17), is new. Independent claims are also included for the following: (a) a process for producing the above buried dielectric capacitor (18-20); and (b) a dielectric memory comprising the above buried dielectric capacitor (18-20). Preferred Features: The capacitor dielectric film (19) comprises: (i) a ferroelectric dielectric selected from Bi2SrTa2O9 (SBT), Bi2SrTa2-xNbxO9 (SBTN), Pb(Zr, Ti)O3 (PZT) or (Pb, La)(Zr, Ti)O3 (PLZT); or (ii) a high dielectric constant dielectric selected from Ta2O5, (Ba, Sr)TiO3 (BST) or SrTiO3 (STO).

7 citations

Patent
08 Mar 2000
TL;DR: In this article, the problem of providing a solid electrolytic capacitor, which is reduced in its ESR (Equivalent series Resistance) and is excellent in its high-frequency characteristics, is solved.
Abstract: PROBLEM TO BE SOLVED: To provide a solid electrolytic capacitor, which is reduced in its ESR (Equivalent Series Resistance) and is excellent in its high-frequency characteristics. SOLUTION: In an anode element 10 of a solid electolytic capacitor, a plurality of anode lead wires 12, 12 and 12 are mounted in and on an anode body 11 of the capacitor, which is a sintered body formed of a valve action metal, the one end of at least the one lead wire 12 of the wires 12 is buried in the anode body, and the one end of at least the other one lead wire of the wires 12 is welded to the surface of the anode body. Moreover, the capacitor is provided with a lead frame connected with all the anode lead wires 4 of the element 10. COPYRIGHT: (C)2001,JPO

7 citations

Patent
12 Jun 1962

7 citations

Patent
Young Sub Yu1, Hyunbo Shin1
16 Mar 2000
TL;DR: In this article, a U-shaped capacitor electrode on a substrate and an HSG silicon layer extending on an inner surface of the U-shape capacitor electrode is also provided and a HSG protection layer comprising silicon nitride is provided.
Abstract: Integrated circuit capacitors include a U-shaped capacitor electrode on a substrate and an HSG silicon layer extending on an inner surface of the U-shaped capacitor electrode. A HSG protection layer comprising silicon nitride is also provided. The HSG protection layer extends on the HSG silicon layer but not on an outer surface of the U-shaped capacitor electrode. A first capacitor dielectric layer comprising silicon nitride extends on the silicon nitride HSG protection layer and on the outer surface of the U-shaped capacitor electrode. A second capacitor dielectric layer comprising an oxide extends on the first capacitor dielectric layer and an upper capacitor electrode extends on the second capacitor dielectric layer.

7 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834