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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Patent
29 Nov 2004
TL;DR: In this paper, a dielectric layer is formed using a ceramic material having a high capacitance, thereby assuring that the capacitors each have a high dielectoric constant corresponding to the capacitance of a decoupling chip capacitor.
Abstract: Disclosed is a PCB including embedded capacitors and a method of fabricating the same. A dielectric layer is formed using a ceramic material having a high capacitance, thereby assuring that the capacitors each have a high dielectric constant corresponding to the capacitance of a decoupling chip capacitor.

51 citations

Patent
27 Feb 2002
TL;DR: In this article, a capacitor is formed between a lower wiring layer and an upper wiring layer in an interior of a circuit board, which is formed of a lower metallic layer which is of at least one valve metal selected from the group consisting of aluminum, tantalum, niobium, tungsten, vanadium, bismuth, titanium, zirconium and hafnium.
Abstract: A capacitor is formed between a lower wiring layer and an upper wiring layer in an interior of a circuit board. The capacitor is formed of a lower metallic layer which is of at least one valve metal selected from the group consisting of aluminum, tantalum, niobium, tungsten, vanadium, bismuth, titanium, zirconium and hafnium, a dielectric layer which is of an oxide of the valve metal which may be the same as or different from the valve metal of the lower metallic layer, an intermediate layer which is of a solid electrolyte, and an upper metallic layer which is of an electrode metal, laminated in this order.

51 citations

Patent
05 Jun 2008
TL;DR: In this article, a stacked body of a solid-state electrolytic capacitor element unit and an electrode conversion board is used to construct a solid state electrolytic capacitance, which includes an anode body having a total thickness of an aluminum foil of 350 μm and a residual core thickness of 50 μm.
Abstract: A solid-state electrolytic capacitor including a stacked body of a solid-state electrolytic capacitor element unit and an electrode conversion board. The unit includes two kinds of solid-state electrolytic capacitor elements. Each of first kind of solid-state electrolytic capacitor elements uses an anode body having a total thickness of an aluminum foil of 350 μm and a residual core thickness, i.e., the total thickness minus the thickness of an etched layer, is 50 μm. A second kind of solid-state electrolytic capacitor element provided on the mounting surface side uses an anode body having a total thickness of an aluminum foil of 150 μm and a residual core thickness is 50 μm. The electrode conversion board includes external anode and external cathode terminals that are arranged in a checkered manner and also includes, on the side opposite to the board, anode electrode and cathode electrode plates.

51 citations

Patent
29 Dec 1972
TL;DR: In this article, a dielectric layer is formed by depositing the mixture on a first aluminum electrode by an electron beam deposition method, and a protective layer which has the same composition as the dielectrics may be deposited on the second electrode.
Abstract: A thin-film capacitor comprising a substrate plate, a dielectric layer, a first electrically conductive layer interposed between the substrate plate and one surface of the dielectric layer, and a second electrically conductive layer provided on the other surface of the dielectric layer. The dielectric layer is made of a mixture of a such as Al2O3, Y2O5, TiO2, SiO2, Ta2O5, BaTiO2, HfO or NbO and a divalent metal oxide such as an oxide of Be, Mg, Ca, Sr, Ba or Ra. The dielectric layer is formed by depositing the mixture on a first aluminum electrode by an electron beam deposition method. In order to further improve the properties of the thin-film capacitor, the surface of the aluminum electrode may be oxidized and the dielectric may be annealed in an atmosphere of nitrogen. Furthermore, a protective layer which has the same composition as the dielectric may be deposited on the second electrode.

51 citations

Patent
17 May 1991
TL;DR: In this article, a stacked capacitor cell structure of a semiconductor memory device was proposed to enlarge the surface area of the lower capacitor electrode without increasing the plane area exclusively occupied by memory cells.
Abstract: In a stacked capacitor cell structure of a semiconductor memory device, the MIM (metal-insulator-metal) capacitor to be used as a transfer gate comprises at least a unit stack of a first insulation film, a lower capacitor electrode, a capacitor gate insulation film, an upper capacitor electrode, another capacitor gate insulation film and an extension of the lower capacitor electrode. Thus, the surface area of the lower capacitor electrode can be enlarged without increasing the plane area exclusively occupied by memory cells. Moreover, with such a configuration, since the surface area of the lower capacitor electrode can be augmented without increasing the film thickness of the electrode, the technical difficulties that the currently known methods of manufacturing semiconductor memory devices with a stacked capacitor cell structure encounter are effectively eliminated and consequently troubles such as short-circuited lower capacitor electrodes become non-existent.

50 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834