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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Patent
31 Aug 2000
TL;DR: In this paper, a V-shaped groove is provided to one end of an anode comb terminal, and anode lead wires 2 led from each of capacitors 1 are connected to the grooves 4a respectively by laser welding.
Abstract: PROBLEM TO BE SOLVED: To solve the problem that the dimensional accuracy and workability are inferior when a plurality of capacitor elements are adjacently arranged, and to provide a solid electrolytic capacitor which is superior in dimensional accuracy and workability, as well as its manufacturing method. SOLUTION: A V-shaped groove 4a is provided to one end of an anode comb terminal 4, and anode lead wires 2 led from each of capacitors 1 are connected to the grooves 4a respectively by laser welding. Thus, a solid electrolytic capacitor superior in dimensional accuracy and workability can be produced stably.

7 citations

Patent
Sungho Park1, Jung-hyun Lee1
15 Dec 2004
TL;DR: A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor devices, include a lower electrode layer, a dielectric layer, and an upper electrode layer with a group 5 element such as niobium (Nb) or vanadium (V).
Abstract: A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor device, include a lower electrode layer, a dielectric layer, and an upper electrode layer, wherein the dielectric layer includes tantalum (Ta) oxide and an oxide of a Group 5 element, such as niobium (Nb) or vanadium (V).

7 citations

Journal ArticleDOI
TL;DR: In this paper, a method by which air capacitor electrodes are charged with a DC voltage and then quickly discharged is described, and a very sensitive Coulombmeter is switched on to measure the additional discharging of thin dielectric films on the electrodes.
Abstract: A method by which air capacitor electrodes are charged with a DC voltage and then quickly discharged is described. Immediately afterwards, a very sensitive Coulombmeter is switched on to measure the additional discharging of thin dielectric films on the electrodes. The method makes possible the measurement of effects having a time constant of several milliseconds to several thousand seconds, and also enables the frequency dependence of the capacitance to be determined, even for time constants below 1 ms. >

7 citations

Patent
11 Jul 2012
TL;DR: In this paper, a tap density meter is used for carrying out tapping treatment on the nanometer tantalum powder before nanometer conglomeration treatment, so the preparation of tantalum powders blank blocks is not needed.
Abstract: The invention relates to a heat treatment method for nanometer tantalum powder. A tap density meter is used for carrying out tapping treatment on the nanometer tantalum powder before nanometer conglomeration treatment, so the preparation of tantalum powder blank blocks is not needed. Compared with the prior art with the treatment capability of 0.9g nanometer tantalum powder every time, the method provided by the invention has the advantages that 100 to 200g of nanometer tantalum powder can be treated every time, the treatment efficiency is greatly improved, meanwhile, the oxygen content of the obtained conglomerated nanometer tantalum powder is lower than 0.1 percent, the requirement that a tantalum capacitor requires the oxygen content of the tantalum powder being lower than 0.3 percent can be completely met, and the engineering production can be favorably realized. Compared with tantalum powder blank blocks in the prior art, the tantalum powder subjected to the tapping treatment has the advantages that the density and the hardness of blank blocks obtained after the heat treatment are low, before the deoxygenation treatment, the crushing treatment is not needed, the generation of tantalum powder sharp corners is avoided, and the adverse influence on the subsequent tantalum capacitor manufacturing and the capacitance volume is eliminated.

7 citations

Patent
07 Jun 1955

7 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834