Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Method of fabricating a planar MIM capacitor

Abstract: A method of fabricating a Metal-Insulator-Metal (MIM) capacitor is presented. The method includes depositing a bottom plate of the MIM capacitor on a passivating dielectric layer which may be a pre-metal or post metal dielectric layer. A capacitor dielectric of the MIM capacitor is subsequently deposited on top of the bottom plate. The capacitor dielectric and the bottom plate both conform to the profile of the passivating dielectric layer. In addition, because the bottom plate is located on a dielectric, which is thermally stable and does not morph or change significantly with successive thermal processing, the capacitor dielectric does not have to be designed to compensate for topography changes due to such thermal processing.

Capacitor, method of making the same, filter using the same, and dielectric thin film used for the same

Abstract: The capacitor (10) in accordance with the present invention comprises a lower electrode (14A), a dielectric layer (16) including an SiO2 layer (20) formed on the lower electrode (14A) and an Si3N4 layer (22) formed on the SiO2 layer (20), and an upper electrode (14B) formed on the dielectric layer (16). When the SiO2 layer (20) is thus interposed between the lower electrode (14A) and Si3N4 layer (22), the lower electrode (14A) and Si3N4 layer (22) adhere to each other more firmly than in the case where the Si3N4 layer (22) is directly formed on the lower electrode (14A) as in a conventional capacitor. Namely, since the dielectric layer (16) includes the Si3N4 layer having a higher dielectric constant, the capacitor (10) in accordance with the present invention yields a large capacitance, while the adhesion between the dielectric layer (16) and lower electrode (14A) is improved over the conventional capacitor.

Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers

Abstract: The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO2 doping. Specifically, applicants have discovered sputtering Ta2 O5 in an oxygen-rich ambient at a temperature in excess of 450° C. and preferably in excess of 550° C., produces a new crystalline phase thin film having enhanced dielectric properties.

Method for constructing ferroelectric based capacitor for use in memory systems

Abstract: A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO2 may also be utilized. The capacitor is preferably constructed over the drain of a FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.