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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Patent
17 Mar 2003
TL;DR: A solid electrolytic capacitor as discussed by the authors is composed of a metal electrode employing a metal, a dielectric layer formed on a surface of the metal electrode, and a carbon material layer overlaid on the layer.
Abstract: A solid electrolytic capacitor of the invention includes a metal electrode employing a metal, a dielectric layer formed on a surface of the metal electrode and composed of an oxide of the metal, and a carbon material layer overlaid on the dielectric layer.

45 citations

Journal ArticleDOI
TL;DR: In this article, the authors present an accurate method to measure the short-term effects of dielectric absorption in standard industrial capacitors and discuss the special precautions to be taken to obtain the required accuracy for very short measurement times.
Abstract: In the integrators applied in A-to-D converters, smart sensors and other processing circuits, the accuracy is directly limited by the performance of the integrating element: the capacitor. An important nonideality of the capacitors concerns the short-term effects of dielectric absorption. This paper presents an accurate method to measure these short-term effects and discusses the measurement results for standard industrial capacitors, MOS and junction capacitors, parasitic capacitors of assembling materials and coaxial-cable capacitors. The special precautions to be taken to obtain the required accuracy for very short measurement times are also discussed. It is shown that the dielectric absorption of a commonly used polycarbonate capacitor causes a nonlinearity of 0.6% for a VCO in the frequency range from 1 kHz to 100 kHz. A very large dielectric-absorption effect has been found for commonly used epoxy printed-circuit boards, which means that special care has to be taken when this material is applied in accurate VCOs.

45 citations

Patent
27 Mar 1984
TL;DR: An aluminum electrolytic capacitor having improved axial heat dissipation resulting from a smaller ratio between the width of the anode foil and the diameter of the capacitor foil roll is described in this article.
Abstract: An aluminum electrolytic capacitor having improved axial heat dissipation resulting from a smaller ratio between the width of the anode foil and the diameter of the capacitor foil roll.

45 citations

Patent
08 Feb 2007
TL;DR: A conductive polymer solution, comprising a π-conjugated conductive polymeric solution, a polyanion, a conductive improver (or a dopant), an alkaline compound and a solvent, is presented in this article.
Abstract: A conductive polymer solution, comprising a π-conjugated conductive polymer, a polyanion. a conductive improver (or a dopant), an alkaline compound and a solvent. The conductive improver is one or more compounds selected from the group of nitrogen containing aromatic cyclic compounds, compounds containing one or more hydroxyl group, compounds containing two or more carboxyl groups, compounds containing one or more hydroxyl or carboxyl groups, the compound containing an amide group, compounds containing an imide group, lactam compounds, and compounds containing a glycidyl group. Further, the alkaline compound is a nitrogen containing aromatic cyclic compound. A capacitor, comprising an anode (11) composed of a valve metal, a dielectric layer (12) formed by oxidation of a surface of said anode, and a solid electrolyte layer (13) formed on a surface of said dielectric layer, and a cathode layer (14) formed on the solid electrolytic layer is obtained.

45 citations

Patent
26 Mar 2002
TL;DR: Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on top of the oxide layer.
Abstract: Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.

44 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834