Topic
Tantalum capacitor
About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.
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Patent•
15 Oct 2001
TL;DR: In this paper, a multilayered structure useful for forming capacitors, which may be embedded within printed circuit boards or other microelectronic devices, was proposed. But the design of the capacitors was not discussed.
Abstract: The invention concerns multilayered structures useful for forming capacitors, which may be embedded within printed circuit boards or other microelectronic devices. The capacitor comprises a pair of parallel conductive foils separated by a pair of dielectric layers. The dielectric layers are further separated by a heat resistant film layer such that the capacitor exhibits excellent short circuit resistance. The resulting capacitor exhibits excellent void and electrical short resistance.
40 citations
TL;DR: In this paper, the capacitors were prepared by two methods: chemical polymerization and electrodeposition of polypyrrole (PP) to increase the thickness and integrity of the PP layer.
39 citations
Patent•
13 Jul 1995TL;DR: In this article, a method for forming solid electrolytic capacitors provides for anode lead and body surface with increased dielectric thickness as distinguished from a dielectrics thickness formed within the inner anode body such that a capacitance value associated therewith is not substantially decreased.
Abstract: A method for forming solid electrolytic capacitors provides for anode lead and body surface with increased dielectric thickness as distinguished from a dielectric thickness formed within the inner anode body such that a capacitance value associated therewith is not substantially decreased. The method includes the steps of anodizing the anode to form a predetermined dielectric thickness on the anode and then soaking the anode in a solvent to impregnate an inner portion thereof with the solvent. The solvent is removed from surface areas desired to be coated by a further dielectric layer and thereafter again anodized whereby additional dielectric build-up is limited to the solvent free areas. The solvent is driven off resulting in a capacitor preform which is reinforced by thickened dielectric without capacitance loss which would result from depositing additional dielectric interiorly in the areas insulated from build-up by the solvent.
39 citations
Patent•
TSMC1
TL;DR: In this paper, a semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided, which includes a substrate, a gate dielectric, and a metal-containing gate electrode.
Abstract: A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate; and a capacitor over the substrate. The capacitor includes a first layer including a first capacitor electrode and a second capacitor electrode, wherein the first capacitor electrode is formed of a metal-containing material and is free from polysilicon. The semiconductor structure further includes a MOS device including a gate dielectric over the substrate; and a metal-containing gate electrode on the gate dielectric, wherein the metal-containing gate electrode is formed of a same material, and has a same thickness, as the first capacitor electrode.
39 citations
TL;DR: This study presented a promising vacuum pyrolysis technology to recycle the organic materials from WTCs, which can facilitate the following tantalum recovery.
39 citations