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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Patent
12 Jul 1996
TL;DR: In this paper, a method of manufacturing a capacitor comprises a step of forming a first dielectric layer composed of a ferroelectric material or a dielectrics material possessing high permittivity on a first electrode, a phase of sintering the first die-lectric layers, a step for forming a second die-electric layer on the first layer, and a phase for forming the second electrode on the second layer.
Abstract: A method of manufacturing a capacitor comprises a step of forming a first dielectric layer composed of a ferroelectric material or a dielectric material possessing high permittivity on a first electrode, a step of sintering the first dielectric layer, a step of forming a second dielectric layer on the first dielectric layer, and a step of forming a second electrode on the second dielectric layer. By forming the second dielectric layer having small crystal grain size on the first dielectric layer having large crystal grain size, the surface of the capacitor insulating layer becomes flat.

37 citations

Patent
29 May 2009
TL;DR: In this article, a solid electrolytic capacitor that contains an anode lead that is electrically connected to the anode body by a refractory metal paste (e.g., tantalum paste) is presented.
Abstract: A solid electrolytic capacitor that contains a capacitor element that includes an anode body, dielectric layer, and solid electrolyte is provided. The capacitor also contains an anode lead that is electrically connected to the anode body by a refractory metal paste (e.g., tantalum paste). The use of such a refractory metal paste allows the anode lead to be sinter bonded to a surface of the anode body after it is pressed. In this manner, a strong and reliable connection may be achieved without substantially decreasing the surface area of the lead that is available for connection to a termination. Furthermore, because the lead is not embedded within the anode body, the capacitor may be configured so that little, if any, portion of the lead extends beyond the anode body. This may result in a highly volumetrically efficient capacitor with excellent electrical properties.

37 citations

Patent
28 Oct 2004
TL;DR: In this paper, a high-dielectric-constant (HDC) capacitor is proposed to be incorporated into a packaging substrate, which includes an upper electrode layer and a lower electrode layer sandwiching the HDC from the upper side and the lower side.
Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

37 citations

Journal ArticleDOI
TL;DR: A comparison of the performance between hybrid capacitors to conventional aluminum and tantalum electrolytic capacitors is made in this paper.
Abstract: The ac and dc performance and leakage current of Evans tantalum oxide-ruthenium oxide hybrid capacitors were characterized at room temperature The RC time constants were in the range from 2 to 045 ms and dependent on the maximum operational voltage of the capacitor The gravimetric and volumetric energy densities of hybrid capacitors were in the range of 0074-0233 J/g and 0388-1384 J/cm/sup 3/, respectively The gravimetric and volumetric power densities of hybrid capacitors were in the range of 19-259 W/g and 100-1540 W/cm/sup 3/, respectively A comparison of the performance between hybrid capacitors to conventional aluminum and tantalum electrolytic capacitors is made in this paper

36 citations

Patent
Yee-Chia Yeo1, Chenming Hu1
13 Jan 2006
TL;DR: In this article, a decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer, and a substantially flat bottom electrode is formed in a portion of the semiconductor surface layer.
Abstract: A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative permittivity, preferably greater than about 5. The capacitor also includes a substantially flat top electrode that overlies the capacitor dielectric. In the preferred application, the top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.

36 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834