Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Tantalum Powder and Methods Of Manufacturing Same

Abstract: Tantalum powder capable of providing a small-sized tantalum electrolytic capacitor while maintaining capacity is described. Tantalum powder in the present invention can be characterized in that the CV value is from 200,000 to 800,000 μFV/g, when measured by the following measuring method. Pellets are produced by forming tantalum powder such that the density is 4.5 g/cm3, then the pellets are chemically converted in a phosphoric acid aqueous solution of concentration 0.1 vol. % at a voltage of 6V and a current of 90 mA/g, and the chemically converted pellets are used as measuring samples to measure the CV value in a sulfuric acid aqueous solution of concentration 30.5 vol. % at a temperature of 25° C. under a frequency of 120 Hz and a voltage of 1.5V.

Reliability comparison of tantalum and niobium solid electrolytic capacitors

Abstract: This paper deals with a comparative investigation of tantalum and niobium solid electrolytic capacitors Nb is an attractive replacement for Ta in solid electrolytic capacitors because it is lighter and cheaper than Ta Although these two metals have much in common in their crystalline structure and physical and chemical properties, the electrical properties of Ta and Nb capacitors are different Particularly, most Nb capacitors are characterized by an increase in direct current leakage during life testing This causes parametric failure of Nb capacitors On the other hand, the direct current leakage of Ta capacitors does not change significantly for a long time, but then increases sharply for some samples Hence occasional catastrophic failures are typical for Ta capacitors Nevertheless, the properties of high-CV Ta capacitors with low and high rated voltage approach the properties of Nb capacitors The physical nature of these phenomena is discussed

High pressure reoxidation anneal of silicon nitride for reduced thermal budget silicon processing

Abstract: A semiconductor integrated circuit fabrication method is provided for forming a capacitor on a semiconductor integrated circuit substrate. A lower capacitor electrode is formed over the semiconductor integrated circuit substrate and a capacitor dielectric is formed over the lower capacitor electrode. The capacitor dielectric is preferably formed of silicon nitride. A reoxidation anneal of the capacitor dielectric is performed at a pressure greater than one atmosphere in order to form an oxide layer over the capacitor dielectric. An upper capacitor electrode is disposed over the oxide layer to form a capacitor. The capacitor is formed as part of a dynamic random access memory cell. A transistor is formed upon the semiconductor integrated circuit substrate and the lower capacitor electrode is formed in electrical contact with a diffusion region of the transistor. The capacitor is formed within an opening in molding material that is deposited over the surface of the semiconductor integrated circuit substrate. The reoxidization anneal of the capacitor dielectric is performed at a temperature in the range of 600° C. to 800° C. at pressures ranging up to twenty-five atmospheres. This forms an oxide layer having a thickness between five angstroms and fifteen angstroms in a period of time short enough to prevent excessive out diffusion of dopants from the diffusion regions of the transistor.

Thin film capacitor having an improved bottom electrode and method of forming the same

Abstract: The present invention provides a storage electrode of a capacitor, which includes a region in contact with a dielectric film of the capacitor, wherein at least the region is made of an amorphous electrically conductive oxide material.