scispace - formally typeset
Search or ask a question
Topic

Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
More filters
Patent
11 Jul 2001
TL;DR: In this paper, a stabilized capacitor using non-oxide electrodes and high dielectric constant oxide (COCO) materials and methods of making such capacitors and their incorporation into DRAM cells is provided.
Abstract: A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.

29 citations

Patent
09 Feb 1976
TL;DR: In this article, a method of forming a thin film capacitor having a tantalum oxide dielectric is described, where a dielectrical substrate having formed thereon a duplex electrically conductive film comprising a non-tantalum electricallyconductive film electrode covered by a thin tantalum film is disposed within an oxygen-inert gas containing vacuum environment.
Abstract: A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having formed thereon a duplex electrically conductive film comprising a non-tantalum electrically conductive film electrode covered by a thin tantalum film is disposed within an oxygen-inert gas containing vacuum environment, said non-tantalum film being disposed intermediate said substrate and said tantalum film. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within the oxygen-inert gas containing vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from said oxygen-inert gas containing environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

29 citations

Journal ArticleDOI
TL;DR: This work experimentally and theoretically shows that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation.
Abstract: The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Mor...

29 citations

Patent
16 Oct 2000
TL;DR: In this article, an anodized metal capacitor and a high temperature deposition (HVD) capacitor are fabricated on the same substrate using only one masking operation and a protective conductive metal layer is used to prevent process chemicals and conditions used to fabricate the dielectric layer of the HTD capacitor from adversely affecting the anodised metal capacitor.
Abstract: An integrated passive component device in which an anodized metal capacitor and a HTD capacitor are fabricated with a protective conductive metal layer disposed between the dielectric layer of the anodized metal capacitor and the dielectric layer of the HTD capacitor. The protective conductive metal layer helps to prevent process chemicals and conditions used to fabricate the dielectric layer of the HTD capacitor from adversely affecting the dielectric layer of the anodized metal capacitor. The anodized metal capacitor and the high temperature deposition capacitor are fabricated on the same substrate using only one masking operation.

29 citations

Patent
Toshihiko Nishiyama1, Takashi Fukaumi1, Koji Sakata1, Satoshi Arai1, Atsushi Kobayashi1 
19 Oct 1994
TL;DR: The solid-state electrolytic capacitor (SCE) as mentioned in this paper is a high polymeric compound deposited on a dielectric oxidation layer covering the surface of pore in a tantalum plate while maintaining voids.
Abstract: A solid-state electrolytic capacitor reduces the possibility of failure due to increasing of a leakage current during application of voltage for a long period and thus improves reliability. The solid-state electrolytic capacitor has a conductive high polymeric compound deposited on a dielectric oxidation layer covering the surface of pore in a tantalum plate while maintaining voids. The void surface acts as an oxygen supply source.

29 citations


Network Information
Related Topics (5)
Capacitor
166.6K papers, 1.4M citations
74% related
Transistor
138K papers, 1.4M citations
72% related
Voltage
296.3K papers, 1.7M citations
70% related
Dielectric
169.7K papers, 2.7M citations
69% related
Silicon
196K papers, 3M citations
67% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834