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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors developed formulas for equivalent series resistance (ESR) and equivalent series inductance (ESL) of a cylindrical capacitor winding as a function of material properties and winding design.
Abstract: A range of high dielectric capacitor films is under development with the objective of improving the energy density of pulsed discharge capacitors. A substantial change in capacitor film dielectric constant has implications for capacitor design and function. This paper develops formulas for equivalent series resistance (ESR) and equivalent series inductance (ESL) of a cylindrical capacitor winding as a function of material properties and winding design. A numerical approach is used to investigate the frequency-dependent ESR and ESL, after which formulas are developed for winding inductance based on a resistive current distribution in the winding. Analyses are carried out for a cylindrical metallized film winding in which the return conductor is brought either through the center of the core on which the film is wound or coaxially up the outside of the winding, so that both connections are made from the same end of the capacitor with minimal inductance. The implications of moving to high dielectric constant film are investigated on the basis of this analysis.

28 citations

Journal ArticleDOI
TL;DR: The electrical properties of several tantalum oxide diodes with various metal counterelectrodes have been studied in this paper, where the devices were prepared on sputtered tantalum by anodizing to the desired oxide thickness (100-200 A) and evaporating the second metal electrode in vacuum.
Abstract: The electrical properties of several tantalum oxide diodes with various metal counterelectrodes have been studied The devices were prepared on sputtered tantalum by anodizing to the desired oxide thickness (100–200 A) and evaporating the second metal electrode in vacuum The devices show a work function dependence on the second metal electrode that also appears to be affected by the manner in which the original tantalum was prepared The temperature behavior of this and several other oxide diode systems follow a Schottky relation fairly well, with deviations at low temperatures and thinner oxide layers, as expected

28 citations

Proceedings ArticleDOI
12 Oct 1998
TL;DR: This paper presents the latest developments for power applications with the tantalum capacitor.
Abstract: Capacitors used in various applications are usually selected for the usage by the type of capacitor. This selection process is most visible in the selection of the aluminum electrolytic for power supply applications. Developments related to improve performance of an alternative type of capacitor is sometimes lost to the user because of the narrow focus given to the one type It is of the designer's best interest to be aware of the developments of all types for all applications. This paper presents the latest developments for power applications with the tantalum capacitor.

28 citations

Patent
Sang-in Lee1
23 Feb 1996
TL;DR: In this article, a dielectric film and an amorphous SiC layer are used to prevent the formation of an oxide layer on the surface of the SiC layers.
Abstract: A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.

28 citations

01 Jan 2010
TL;DR: The need for reliable components with smaller form factors continues to drive many of the innovation efforts within the passive components community as discussed by the authors, and tantalum chip capacitors remain the best option for capacitance values that exceed the reaches of MLCC capacitors.
Abstract: The need for reliable components with smaller form factors continues to drive many of the innovation efforts within the passive components community. For applications requiring the smallest component options available, tantalum chip capacitors remain the best option for capacitance values that exceed the reaches of MLCC capacitors. Today, the best options for higher capacitance needs are being met by both MnO2 and polymer tantalum chip capacitors as well as surface mount aluminum electrolytic capacitors. As with all component technologies, each has its own set of strengths and weaknesses that designers must take into account when making their component selections. Among these are the capacitance range, voltage range, impedance characteristics, reliability, and physical size.

27 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834