Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Semiconductor device having a metal-insulator-metal capacitor

Abstract: A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor comprises the steps of forming a first dielectric film on a substrate, forming a MIM capacitor on the first dielectric film, forming a second dielectric film covering the MIM capacitor, selectively removing the first and second dielectric films to expose the substrate surface, surface treating using a hydrochloric acid solution, forming a third dielectric film on the second dielectric film and the substrate, and forming a transistor on the third dielectric film. The second dielectric film protects the capacitor insulator film of the MIM capacitor.

Analysis of ripple current of an electrolytic capacitor in power factor controller

Abstract: A large electrolytic capacitor is usually used at the output terminal of power factor control circuits to suppress the high-frequency switching ripple voltage as well as the low-frequency ripple voltage. Due to the equivalent series resistance of the electrolytic capacitor, the capacitor current causes a power loss which increases its temperature and may shorten its life time. It is important therefore to estimate the effective value of the capacitor current accurately. This paper presents a detailed analysis of the ripple current of an electrolytic capacitor in a boost-type power factor control circuit. The ripple current is divided into two components, namely the low-frequency and the high-frequency components. The root-mean-square value of the capacitor current is derived for both components. The analytical results are confirmed by experiments. >

Tantalum Printed Capacitors

Abstract: It has previously been considered either impossible or impractical to make tantalum oxide capacitors by applying a metal counter electrode directly to a tantalum oxide film. Attempts in this direction have led to either direct shorts or low breakdown strength. For this reason, it has been presumed that it was essential to use either an electrolyte or a semiconductor in the cathode structure. Using sputtered tantalum films as the base for the anodized oxide film, however, excellent results have been achieved employing evaporated metal counter electrodes. Many of the properties of units made in this way are superior to those of other types of tantalum capacitors. Capacitances obtained are comparable to the capacitance-area relationships for tantalum electrolytic capacitors formed to the same voltages. DC leakages, however, have been found to be much lower than values reported for those of tantalum electrolytic units. Another advantage is that these units are capable of withstanding higher voltages than will tantalum solid electrolytic capacitors formed to the same voltage. Indeed, voltages equal to the anodizing voltage may be maintained on the capacitor without impairment. Capacitors have also been produced with thin films of other anodizable metals, evaporated aluminum in particular. This type of capacitor should find many applications in the lower capacitance areas, and seems ideally suited for printed circuit applications.

Process-compatible decoupling capacitor and method for making the same

Abstract: Provided is decoupling capacitor device. The decoupling capacitor device includes a first dielectric layer portion that is deposited in a deposition process that also deposits a second dielectric layer portion for a non-volatile memory cell. Both portions are patterned using a single mask. A system-on-chip (SOC) device is also provided, the SOC include an RRAM cell and a decoupling capacitor situated in a single inter-metal dielectric layer. Also a method for forming a process-compatible decoupling capacitor is provided. The method includes patterning a top electrode layer, an insulating layer, and a bottom electrode layer to form a non-volatile memory element and a decoupling capacitor.

Multilayer ceramic capacitor and its production method

Abstract: The invention aims to provide a multilayer ceramic capacitor with high dielectric constant, a high capacitance, and an excellent reliability by eliminating oxygen vacancy in dielectric layers and suppressing oxidation of Ni inner electrodes. The multilayer ceramic capacitor comprises a multilayered dielectric body composed by alternately piling up dielectric layers containing mainly barium titanate and inner electrode layers containing mainly Ni and a first hetero-phase containing Mg—Si—O as constituent elements exists in the capacitor.