Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Solid electrolytic capacitors

Abstract: A solid electrolytic capacitor is disclosed. The capacitor comprises an organophosphorus material positioned between the dielectric layer and the polymeric electrolyte layer. The organophosphorus compound improves the interlayer adhesion between the dielectric and electrolyte layers.

Electrolytic formation process for aluminum capacitor electrodes

Abstract: AN ALUMINUM CAPACITOR ELECTRODE HAS A PARTIALLY CRYSTALLINE ANODIC OXIDE STRUCTURE FORMED THEREON THAT IS HYDRATION-RESISTANT, AND POSSESES A STABLE CAPACITANCE VALUE, DISSIPATION FACTOR AND A LEAKAGE CURRENT EVEN UNDER HIGH HUMIDITY CONDITIONS. THIS HYDRATION-RESISTANT OXIDE STRUCTURE IS ADVABTAGEOUSLY FORMED WHEN AN ALUMINUM ELECTRODE IS TREATED IN A FORMATION ELECTROLYTE AT A TEMPERATURE IN EXCESS OF 150*C. THE ELECTROLYTE MAY BE ANY SUITABLE SOLVENT/SOLUTE SYSTEM WHEREIN THE SOLVENT IS A HHIGH BIOLING ORGANIC MATERIAL CONTAINING A SMALL PERCENTAGE OF WATER AND THE SOLUTE IS A SALT HAVING A CONCENTRATION THAT IMPARTS A CONDUCTIVITY OF 10,000 OHM-CM.OR LESS TO THE ELECTROLYTE.

Copper lead frame material for tantalum capacitor and manufacture thereof

Abstract: PURPOSE:To provide a copper lead frame material for a tantalum capacitor having excellent heat peeling resistance and exhibiting satisfactory solder wettability even after heat treatment. CONSTITUTION:A copper lead frame material for a tantalum capacitor has a base material 4 made of German silver, a nickelplated layer 2 formed on the material 4, an intermetallic compound layer 3 of tin and copper formed in thickness of 0.1 to 2.0mum on the layer 2, and a tin-plated layer 1 (or solder- plated layer) formed on the layer 3. The layer 3 is formed by forming, for example, a copper-plated layer of 0.1 to 1.0mum thick on the nickel-plated layer, forming a tin- or solder-plated layer on the copper-plated layer, and then reflowing or melted tin-plating or melted solder-plating on the copper-plated layer.

Tantalum oxide capacitors for GaAs monolithic integrated circuits

Abstract: The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulating GaAs substrate. Dielectric constants of 20-25 were achieved in the capacitors fabricated. An initial application of this process as an interstage coupling capacitor for a two-stage preamplifier is given.

Directionally-grown capacitor anodes

Abstract: A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a preferred embodiment, the dielectric is grown on titanium sponge and is doped with oxides of Ca, Mg, Sr, Be, or Ba to improve the film's dielectric constant or with higher valent cations, such as Cr 6+ , V 5+ , Ta 5+ , Mo 6+ , Nb 5+ , W 6+ , and P 5+ , to reduce the oxygen vacancy concentration and leakage current of the dielectric film. A capacitor formed from the sponge includes a cathode electrolyte which serves as an electrical conductor and to repair the dielectric film by re-oxidizing the anode surface at areas of local breakdown. Sponges of titanium, tantalum, and aluminum form efficient dielectric films. In another embodiment, sponges of elements which do not form efficient dielectric films are coated with a dielectric material. Capacitors formed with titanium sponges have energy densities of 10 −2 to 50 Watt hours and power densities of 100,000 to 10,000,000 Watts per kilogram of titanium.