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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Patent
23 Nov 1989
TL;DR: In this paper, a method for making the same, where one plate of the capacitor comprises silicon, and the second plate is formed over the yttrium oxide layer, is described.
Abstract: A capacitor, and a method for making the same, are disclosed, wherein one plate of the capacitor comprises silicon. The dielectric material of the capacitor includes a silicon nitride layer disposed adjacent the silicon plate, and a layer of yttrium oxide disposed thereover. The second plate of the capacitor is formed over the yttrium oxide layer. The silicon nitride provides a barrier to the diffusion of silicon into the yttrium oxide film if the structure is heated, providing for a high dielectric constant capacitor dielectric which has improved leakage characteristics.

22 citations

Journal ArticleDOI
TL;DR: In this article, a 5 A tantalum nitride interface layer was added to the hafnium-doped tantalum oxide high dielectric constant thin film to improve its dielectrics.
Abstract: Drastic improvement of the dielectric properties of the hafnium-doped tantalum oxide high dielectric constant thin film with the insertion of a 5 A tantalum nitride interface layer was observed. The film's breakdown strength, leakage current, and apparent dielectric constant were improved with the addition of the interface layer. However, the interface layer introduced additional fixed charges to the film, which can only be partially removed with the 700°C annealing step. This thin interface layer did not change the phenomenon that the lightly doped film has an anomalous high k value compared with other doped or undoped films. The deposited TaNx interface film contained Ta–N, Ta–O and Si–O bonds after the 700°C anneal, which is a high k film. It also prevented the formation of an interface film with inferior qualities. This interface modification method is viable for future high k gate dielectric applications.

22 citations

Journal ArticleDOI
TL;DR: The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties as discussed by the authors.

22 citations

Patent
02 Oct 2002
TL;DR: An electrode for electrolytic capacitors having a large capacitance and having excellent tan δ, heat resistance, humidity resistance and stability is described in this paper, where the compound having a siloxane bond is attached by coating, dipping or vapor deposition.
Abstract: An electrode for electrolytic capacitors having a large capacitance and having excellent tan δ, heat resistance, humidity resistance and stability. An electrolytic capacitor using the electrode. An electrode obtained by attaching a compound having a siloxane bond onto the surface of an electrode body comprising a valve-acting metal having formed thereon a dielectric film. The compound having a siloxane bond is attached by coating, dipping or vapor deposition. A solid electrolytic capacitor obtained by forming an electrolyte comprising an electrically conducting polymer on the electrode.

22 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834