Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Scalable high dielectric constant capacitor

Abstract: A capacitor for high density DRAM applications comprises a high-e capacitor dielectric such as BST or PZT in an arrangement which obviates the need for barrier layers during fabrication. The fabrication process allows for electrode placement by simple sputter deposition and further provides for the possibility of capacitor spacing below that of conventional lithographic techniques.

Fixed frequency regulation circuit employing a voltage variable dielectric capacitor

Abstract: Frequency regulating apparatus comprising a high power, voltage variable dielectric varactor or capacitor (or ferroelectric voltage variable dielectric capacitor) for use as a control element in the regulation circuit that actively tunes a resonant network to modulate power delivered to a load. The voltage variable dielectric capacitor comprises a substrate having a bottom electrode 33 formed thereon. A dielectric material is disposed on the substrate is a crystallized ceramic material that preferably comprises a barium, strontium, and titanium mixture. A top electrode is disposed on top of the crystallized ceramic material. Methods of fabricating the voltage variable dielectric varactor (capacitor) are also disclosed.

Tunable thin film capacitor

Abstract: It is an object of the invention to provide a variable capacitor constituted such that, even when an external control voltage is applied, a stable dielectric constant of the dielectric layer can be obtained. A variable capacitor constituted such that a dielectric layer whose dielectric constant is changed by the application of an external voltage is held between an upper electrode layer and a lower electrode layer, wherein a plurality of capacitance-producing regions a, b are connected to each other.

Multi-layer conductor-dielectric oxide structure

Abstract: A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors Examples of barrier layers include Ni—P or Ni—Cr alloys After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board

Methods of forming capacitor constructions

Abstract: The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.