Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Substrate having a built-in capacitor and process for producing the same

Abstract: In a substrate having built-in capacitor which is incorporated in and united with an insulator, the capacitor has a dielectric layer made of a silicon nitride-based ceramic containing silicon carbide in an amount of from 13 to 30% by weight.

Process for forming a capacitor having a metal-oxide dielectric

Abstract: A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.

Dielectric properties and space charge behavior in SiC ceramic capacitor

Abstract: Strong space charge response is observed in SiC ceramic capacitors at low frequencies up to 0.1MHz. It leads to a dielectric constant of 2 910 000 at 100Hz. The critical temperature is observed near 773K. The losses decrease with increasing temperature. Strong frequency dependence of the dielectric properties is also detected. The SiC ceramic capacitor might be suitable as high-temperature by-pass capacitor in low voltage circuits.

Capacitor having high temperature stability, high dielectric constant, low dielectric loss, and low leakage current

Abstract: Examples of the present invention include high electric energy density polymer film capacitors with high dielectric constant, low dielectric dissipation tangent, and low leakage current in a broad temperature range. More particularly, examples include a polymer film capacitor in which the dielectric layer comprise a copolymer of a first monomer (such as tetrafluoroethylene) and a second polar monomer. The second monomer component may be selected from vinylidene fluoride, trifluoroethylene or their mixtures, and optionally other monomers may be included to adjust the mechanical performance. The capacitors can be made by winding metallized films, plain films with metal foils, or hybrid construction where the films comprise the new compositions. The capacitors can be used in DC bus capacitors and energy storage capacitors in pulsed power systems.

Multilayer capacitor including a dielectric breakdown prevention layer

Abstract: A multilayer capacitor capable of having reducing electrical field intensity at external electrode edges while preventing occurrence of surface dielectric breakdown. This multilayer capacitor has a capacitor main body which includes a capacitance formation section having alternately laminated pluralities of internal electrodes and dielectric layers, and outer dielectric layer sections laminated on the upper and lower surfaces of the capacitance formation section. The capacitor also has external electrodes formed on respective opposite external side surfaces of the capacitor main body and each connected to certain ones of the internal electrodes. The outer layer sections each have respective dielectric breakdown prevention layers therein, each of which exhibits a carefully designed relative dielectric constant e which is less than that of the dielectric layers in the capacitance formation section, and not more than 300, and has a thickness d μm! satisfying the relation: d>(0.2×e)+20.