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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


Papers
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Patent
15 Sep 2004
TL;DR: In this paper, a thin-film capacitance with a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower and upper electrodes, is proposed.
Abstract: A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

79 citations

Patent
Kyu-Mann Lee1
06 Jul 2001
TL;DR: In this article, an integrated circuit capacitors having dielectric layers therein that comprise ferroelectric materials, include the use of protective layers to block the infiltration of hydrogen into the Ferroelectric material.
Abstract: Methods of forming integrated circuit capacitors having dielectric layers therein that comprise ferroelectric materials, include the use of protective layers to block the infiltration of hydrogen into the ferroelectric material. By blocking the infiltration of hydrogen, the hysteresis characteristics of the ferroelectric materials can be preserved. A preferred integrated circuit capacitor comprises a semiconductor substrate and a lower capacitor electrode on the semiconductor substrate. A capacitor dielectric layer that comprises a ferroelectric material, is provided on the lower capacitor electrode. An upper capacitor electrode is also provided on the capacitor dielectric layer. In order to inhibit degradation of the ferroelectric characteristics of the capacitor dielectric layer, a protective layer is utilized to cover the capacitor dielectric layer. In particular, the protective layer is formed to encapsulate the upper capacitor electrode and the capacitor dielectric layer. The protective layer preferably includes a material that is substantially free of hydrogen and has a chemical and/or physical structure that blocks transfer (e.g., diffusion) of hydrogen therethrough. The protective layer may also have a thickness of greater than about 50 Å, in order to further inhibit transfer of hydrogen from outside the protective layer to the underlying capacitor dielectric layer. The protective layer may comprise a metal oxide selected from the group consisting of Al 2 O 3 , TiO 2 , SiO 2 , ZrO 2 and CeO 2 .

76 citations

Patent
James Kent Howard1
17 Dec 1982
TL;DR: In this paper, the authors proposed a dual dielectric structure consisting of a leakage current blocking first layer and a high-dielectric constant second layer, which can be used as an antireflective coating for the titanate or zirconate layer.
Abstract: A thin film capacitor having a high dielectric constant and low leakage current includes a dual dielectric structure. The dual dielectric comprises a leakage current blocking first dielectric layer and a high dielectric constant second dielectric layer. The high dielectric constant second dielectric layer is formed by laser annealing a ferroelectric forming titanate or zirconate into a ferroelectric. A leakage current blocking first dielectric layer may also serve as an antireflective coating for the titanate or zirconate layer so that better coupling of the laser energy to the titanate or zirconate layer is obtained.

75 citations

Patent
11 Aug 2003
TL;DR: In this paper, a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.
Abstract: Semiconductor devices and methods for making the same are described in which a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments. Analog capacitors are formed by coupling analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.

75 citations

Patent
Pak K. Leung1, Ismail T. Emesh1
11 Jul 1996
TL;DR: In this article, a capacitor structure and method of forming a capacitance structure for an integrated circuit is provided, comprising a bottom electrode, capacitor dielectric and top electrode, formed on a passivation layer overlying the interconnect metallization.
Abstract: A capacitor structure and method of forming a capacitor structure for an integrated circuit is provided. The capacitor structure, comprising a bottom electrode, capacitor dielectric and top electrode, is formed on a passivation layer overlying the interconnect metallization. The capacitor electrodes are interconnected to the underlying integrated circuit from underneath, through conductive vias, to the underlying interconnect metallization. The method provides for adding capacitors to an otherwise completed and passivated integrated circuit. The structure is particularly applicable for ferroelectric capacitors. The passivation layer acts as a barrier layer for a ferroelectric dielectric. Large area on-chip capacitors may added without affecting the interconnect routing or packing density of the underlying devices, and may be added almost independently of the process technology used formation of the underlying integrated circuit.

75 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834