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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


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Patent
06 Jun 1997
TL;DR: In this paper, a dielectric thin film capacitor element is constructed by forming a lower electrode, an upper electrode, and an oxide material composed of at least titanium and strontium and containing erbium.
Abstract: The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

18 citations

Proceedings ArticleDOI
06 Mar 2000
TL;DR: In this paper, it is shown that it is difficult, if not impossible, for any single dielectric material and capacitor configuration to provide this entire range without either the highest or lowest-valued components occupying too large an area, exhibiting excessively high series resistance, or being too small to fabricate with acceptable tolerance.
Abstract: Value requirements for capacitors in modern microelectronic assemblies extend over six orders of magnitude from about 1 pF to 1 /spl mu/F. For many applications this entire range must be present on the same substrate with the lower end providing a variety of filtering, timing, RF and A/D purposes and the upper end serving decoupling and other energy-storage functions. The smaller capacitors generally require stricter tolerances and tighter stabilities than the larger units. There are many candidate dielectric materials, deposition/etching processes and plate configurations for integrating these devices. It is difficult, if not impossible, for any single dielectric material and capacitor configuration to provide this entire range without either the highest or lowest-valued components occupying too large an area, exhibiting excessively high series resistance, or being too small to fabricate with acceptable tolerance. Therefore, it will often be necessary to mix integrated capacitor technologies on a single substrate. BCB, polyimide and SiO/sub 2/ provide a small enough capacitance and sufficient tolerance for the bottom end of the range while anodized metals or ferroelectric powders in epoxy thin films can cover decoupling termination and some energy storage into the range of hundreds of nF. Ferroelectric thin films provide much higher dielectric constants but are currently difficult to integrate, especially for small values, and have less temperature, frequency and bias stability than paraelectrics. Once it becomes possible to form ferroelectric thin films at temperatures low enough for organic substrates these films will be very useful for energy storage.

18 citations

Patent
Anders W1
26 Mar 1976
TL;DR: In this paper, a method of producing thin film tantalum capacitors having a tantalum thin film electrode mounted on a nonconducting support member is described, where the tantalum electrode is doped with nitrogen to produce a nitrogen content in a range from the nitrogen content of β tantalum to that for tantalum nitride.
Abstract: A method of producing thin film tantalum capacitors having a tantalum thin film electrode mounted on a nonconducting support member is described. The tantalum electrode is doped with nitrogen to produce a nitrogen content in a range from the nitrogen content of β tantalum to that for tantalum nitride. A tantalum pentoxide film with dielectric properties is grown on the tantlum electrode by oxidation. At least, the tantalum electrode and the dielectric are subjected to tempering. The dielectric is then covered with another electrode.

18 citations

Patent
05 Sep 2007
TL;DR: An electric double layer capacitor (EDLC) as discussed by the authors is a type of capacitance with low equivalent series resistance (ESR) in a coin or button cell configuration having low ESR, which comprises mesh or other porous metal that is attached via conducting adhesive to one or both the current collectors.
Abstract: An electric double layer capacitor (EDLC) in a coin or button cell configuration having low equivalent series resistance (ESR). The capacitor comprises mesh or other porous metal that is attached via conducting adhesive to one or both the current collectors. The mesh is embedded into the surface of the adjacent electrode, thereby reducing the interfacial resistance between the electrode and the current collector, thus reducing the ESR of the capacitor.

18 citations

Patent
Chojiro Kuriyama1
11 Aug 2004
TL;DR: In this article, a solid electrolytic capacitor (A 1 ) is used to enhance the noise cancellation property of a wide frequency band, and large electric power can be supplied with high responsiveness.
Abstract: A solid electrolytic capacitor (A 1 ) includes a porous sintered body ( 10 ) of metal particles or conductive ceramic particles, anode wires ( 11 A, 11 B) partially inserted in the porous sintered body ( 10 ), an anode terminal provided by portions of the anode wires ( 11 A, 11 B) which project from the porous sintered body ( 10 ), and a cathode ( 30 ) formed on an obverse surface of the porous sintered body ( 10 ). The anode terminal includes a first and a second anode terminals ( 11 a, 11 b ), and circuit current flows from the first anode terminal ( 11 a ) toward the second anode terminal ( 11 b ) through the porous sintered body ( 10 ). Therefore, noise cancellation property can be enhanced with respect to a wide frequency band, and large electric power can be supplied with high responsiveness. In a circuit using the solid electrolytic capacitor (A 1 ), the space efficiency on aboard can be enhanced, and the cost can be reduced.

18 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834