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Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.


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Patent
25 Feb 1998
TL;DR: In this paper, the multilayer microelectronic circuit comprises a main capacitor dielectric layer, a main capacitance first electrode disposed on one of opposite sides of the main capacitive layer, and a second capacitive second electrode on the other of the opposite side of the primary capacitive layers.
Abstract: The multilayer microelectronic circuit comprises a main capacitor dielectric layer, a main capacitor first electrode disposed on one of opposite sides of the main capacitor dielectric layer, a main capacitor second electrode disposed on the other of the opposite sides of the main capacitor dielectric layer in a way as to oppose the main capacitor first electrode through the main capacitor dielectric layer, a first trimming capacitor dielectric layer disposed on a side of the main capacitor first electrode opposite to the main capacitor dielectric layer, a first trimming capacitor electrode disposed on a side of the first trimming capacitor dielectric layer opposite to the main capacitor first electrode in a way as to oppose the main capacitor first electrode through the first trimming capacitor dielectric layer, a second trimming capacitor dielectric layer disposed on a side of the first trimming capacitor electrode opposite to the first trimming capacitor dielectric layer, and a second trimming capacitor electrode disposed on a side of the second trimming capacitor dielectric layer opposite to the first trimming capacitor electrode in a way as to oppose the first trimming capacitor electrode through the second trimming capacitor dielectric layer. The first trimming capacitor electrode is first trimmed for rough adjustment of a capacitance of the circuit. The second trimming capacitor electrode is then trimmed for fine adjustment of the capacitance.

18 citations

BookDOI
01 Jan 2018

18 citations

Patent
24 Sep 2004
TL;DR: In this paper, a method for producing a capacitor with a good capacitance appearance factor and a low ESR was proposed, which is based on impregnating an electric conductor with a semiconductor layer-forming precursor before energization.
Abstract: A method for producing a capacitor having a good capacitance appearance factor and a low ESR comprising, as one electrode (anode), an electric conductor having pores and having formed on the surface thereof a dielectric layer and, as the other electrode (cathode), a semiconductor layer formed on the electric conductor by energization in an electrolytic solution, the method comprising impregnating pores with a semiconductor layer-forming precursor before energization to render the concentration of semiconductor layer-forming precursor in pores higher than that of semiconductor layer-forming precursor in the electrolytic solution; a capacitor produced by the method; and an electronic circuit and an electronic device using the capacitor.

18 citations

Patent
Paul Koning1, Paul H. Wermer1
12 Sep 2002
TL;DR: In this paper, a dielectric consisting of a polymer that has a high dielectrics constant was used to construct an IC with an embedded capacitor and an IC package made with the polymeric material.
Abstract: The present invention includes a dielectric. The dielectric comprises a polymer that has a high dielectric constant. The polymer comprises polarizable species. The present invention also includes an embedded capacitor, and an IC package made with the dielectric.

18 citations

Journal ArticleDOI
01 Mar 1960
TL;DR: In this paper, the effect of thin dielectric films on cylindrical 3-terminal capacitors has been discussed and the results suggest that the mean capacitance per unit length may remain constant to the first order.
Abstract: The effect on the cross-capacitances per unit length of cylindrical 3-terminal capacitors of thin dielectric films on the capacitor electrodes is discussed. It is assumed that the cross-section of such dielectric films remains constant throughout the length of the capacitor. Some conformal transformations of basic cylindrical capacitor cross-sections are given. When these are applied to a symmetric cylindrical capacitor with a thin dielectric film on its electrodes, the results suggest that the mean capacitance per unit length may remain constant to the first order despite the presence of the dielectric film. The same methods also suggest that the individual cross-capacitances per unit length may remain constant to the first order provided that the dielectric film is disposed symmetrically with respect to the capacitor symmetry plane. Further support for these conjectures is given by the results of a detailed calculation of the cross-capacitances per unit length of a parallel-plate cylindrical capacitor with a thin uniform dielectric film on one electrode. In the last Section, a lemma concerning the existence of an equivalent dielectricless capacitor is given and this is followed by the proof of general results of the type suggested by the previous working.

18 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
20227
20219
202020
201924
201834