Topic
Tantalum capacitor
About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.
Papers published on a yearly basis
Papers
More filters
16 Jun 2005
TL;DR: In this article, the authors proposed a method to reduce the capacitor ripple current, which leads to a reduced demand on DC link electrolytic capacitors, by applying an optimised switching pattern to the power transistors.
Abstract: The use of electrolytic capacitors in automotive applications is critical. High ambient temperatures lower lifetime and reliability, while further disadvantages arise from costs and installation space. The presented work shows a method to reduce the capacitor ripple current, which accordingly leads to a reduced demand on DC link electrolytic capacitors. The proposed method is based on applying an optimised switching pattern to the power transistors. Thereby, the ripple current can be reduced to approximately one third compared to conventional PWM signals. The optimisation is also described graphically, and measurements verify the practicability
17 citations
Patent•
22 May 2001
TL;DR: In this paper, a method for manufacturing a solid electrolytic capacitor using a functional polymer composition is presented, which comprises immersing the rolled aluminum electrolytic capacitance device in polyaniline solution with high electric conductivity to impregnate the device with polyanile, drying the impregnated device in a drying oven which is maintained at constant temperature to fully remove the solvent, inserting the dried device to a capacitor aluminum can and then sealing with epoxy resin, to manufacture a solid ECS using afunctional polymer.
Abstract: Disclosed is a method for manufacturing a solid electrolytic capacitor using a functional polymer composition. The method comprises immersing the rolled aluminum electrolytic capacitor device in polyaniline solution with high electric conductivity to impregnate the device with polyaniline, drying the impregnated device in a drying oven which is maintained at constant temperature to fully remove the solvent, inserting the dried device to a capacitor aluminum can and then sealing with epoxy resin, to manufacture a solid electrolytic capacitor using a functional polymer. As such, the impregnation can be performed well at not only normal temperature and pressure, but also high temperature and reduced pressure. The solid electrolytic capacitor has the advantages of high capacity, low impedance and low ESR, and also, low manufacturing cost, simple processes and high reliability.
17 citations
TL;DR: In this article, it was shown that carbon and nitrogen doping is desirable not only for meeting the 50 volt dc leakage current criterion used on 230 V tantalum film capacitors, but also for optimizing capacitor reliability.
Abstract: The results of this study demonstrate that addition of either carbon or nitrogen to tantalum is desirable not only for meeting the 50 volt dc leakage current criterion used on 230 V tantalum film capacitors, but also for optimizing capacitor reliability. Since both dopants lower the capacitance density by about 1% and 0.35% for each atomic (at',, % of N or C, respectively, the amounts added to tantalum should be kept as low as possible. Two at % of nitrogen or three at % carbon are sufficient to realize their beneficial, effect on capacitor leakage current and capacitor reliability, while addition of oxygen (up to 20 at %) does not improve capacitor quality. Possible effects of nitrogen and carbon doping on the electronic structure (band structure) of the anodic oxide will be discussed.
17 citations
Patent•
06 Jul 1981
TL;DR: In this paper, a multigap series construction for multiple electrode monolithic capacitors employing ceramics is described, where the voltage rating of such capacitors increases with each gap added across the dielectric.
Abstract: This specification discloses a multigap series construction for multiple electrode monolithic capacitor structures employing ceramics. The voltage rating of such capacitors increases with each gap added across the dielectric. Additionally, the amount of piezoelectric activity occurring in a piezoelectric dielectric is limited by the series gap arrangement to be below that which causes deleterious spurious signals to be generated when said capacitor vibrates.
17 citations
TL;DR: In this article, a higher dielectric constant of 42.8 was obtained for 0.9Ta2O5-0.1Al2O3 thin films compared to that reported for pure Ta2O 5 (25−30).
Abstract: Tantalum oxide (Ta2O5) is a promising high dielectric constant material for the DRAM applications because of its ease of integration compared to other complex oxide dielectrics. The dielectric constant and thermal stability characteristics of bulk Ta2O5 samples were reported to enhance significantly through small substitutions of Al2O3. However, this improvement in the dielectric constant of (1-x)Ta2O5-xAl2O3 is not clearly understood. The present research attempts to explain the higher dielectric constant of (1-x)Ta2O5-xAl2O3 by fabricating thin films with enhanced dielectric properties. A higher dielectric constant of 42.8 was obtained for 0.9Ta2O5–0.1Al2O3 thin films compared to that reported for pure Ta2O5 (25–30). This increase was shown to be closely related to a-axis orientation. Pure Ta2O5 thin films with similar a-axis orientation also exhibited a high dielectric constant of 51.7, thus confirming the orientation effect. The leakage current properties and the reliability characteristics were also found to be improved with Al2O3 addition.
17 citations