Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

The electrolytic capacitor

Abstract: IN this age of electronics, we have ceased to marvel at the sight of incredibly complicated circuits being packed into ever smaller and smaller boxes. Few probably pause to consider the great part that has been played by the development of the electrolytic condenser in order to achieve these feats of space compression.The Electrolytic Capacitor By Alexander M. Georgiev. Pp. xii+191. (New York and Toronto: Murray Hill Books, Inc.; London: Crosby Lockwood and Son, Ltd., 1945.) 15s. net.

Solid electrolytic capacitor element and method for producing the same

Abstract: The present invention provides a solid electrolytic capacitor having a structure that relieves thermal stress, prevents leakage current, exhibits low impedance and ensures high reliability. The solid electrolytic capacitor element has a valve-acting metal substrate with a dielectric film and an edge part acting as an anode, an insulating layer circumferentially provided on the substrate, a solid electrolyte layer and an electrically conducting layer having a carbon paste layer and a metal powder-containing electrically conducting layer formed in this order on the entire substrate surface opposite to the anode with respect to the insulating layer and acting as a cathode. The electrically conducting layer is provided within a region of the carbon paste layer or with a spacing from the cathode side edge part of the insulating layer. The present invention also provides a method for producing the element, and a solid electrolytic capacitor using the element.

High frequency response of amorphous tantalum oxide thin films

Abstract: Amorphous tantalum oxide films were deposited using a pulsed dc reactive magnetron sputtering technique at low temperature (/spl les/200/spl deg/C). A test vehicle (metal-insulator-metal structure) was designed and fabricated for the high frequency characterization of the dielectric thin film. The dielectric constant and loss tangent of the amorphous tantalum oxide thin film were measured using dc, time domain reflectometry (TDR), and network analyzer up to 10 GHz. The measured dielectric constant and loss tangent was 22 and 0.007, respectively from 1 KHz to 10 GHz. The high frequency properties of the amorphous tantalum oxide thin film show little dispersion up to 10 GHz. However, the resonance oscillation due to the parasitics is evident between 10 GHz and 40 GHz and depends on the capacitor area. Modeling of the equivalent circuits would allow us to identify the parasitic components and their effects on the measured scattering parameters.

Method of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitride

Abstract: In order to fabricate a semiconductor device having a stacked capacitor cell, a silicon substrate is first prepared. A lower capacitor electrode having a porous surface is then formed on the silicon substrate. Following this, the lower capacitor electrode is selectively covered with a titanium nitride film. Further, a dielectric film of a material, exhibiting high permittivity or feroelectricity, is deposited on said titanium nitride film, and an upper capacitor electrode is deposited on the dielectric film.