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Thermal expansion

About: Thermal expansion is a research topic. Over the lifetime, 21040 publications have been published within this topic receiving 349407 citations. The topic is also known as: heat expansion.


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Journal ArticleDOI
TL;DR: In this paper, the authors used finite element models to predict material response in internally heated nozzle tests, and the results of the modeling suggest that HfB2 should survive the high thermal stresses generated during the nozzle test primarily because of its superior thermal conductivity.
Abstract: The thermal conductivity, thermal expansion, Young's Modulus, flexural strength, and brittle-plastic deformation transition temperature were determined for HfB2, HfC0.98, HfC0.67, and HfN0.92 ceramics. The mechanical behavior of αHf(N) solid solutions was also studied. The thermal conductivity of modified HfB2 exceeded that of the other materials by a factor of 5 at room temperature and by a factor of 2.5 at 820°C. The transition temperature of HfC exhibited a strong stoichiometry dependence, decreasing from 2200°C for HfC0.98 to 1100°C for HfC0.67 ceramics. The transition temperature of HfB2 was 1100°C. Pure HfB2 was found to have a strength of 340 MPa in 4 point bending, that was constant from room temperature to 1600°C, while a HfB2 + 10% HfCx had a higher room temperature bend strength of 440 MPa, but that dropped to 200 MPa at 1600°C. The data generated by this effort was inputted into finite element models to predict material response in internally heated nozzle tests. The theoretical model required accurate material properties, realistic thermal boundary conditions, transient heat transfer analysis, and a good understanding of the displacement constraints. The results of the modeling suggest that HfB2 should survive the high thermal stresses generated during the nozzle test primarily because of its superior thermal conductivity. The comparison the theoretical failure calculations to the observed response in actual test conditions show quite good agreement implying that the behavior of the design is well understood.

233 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present a review of the results reached by now in studying the possibility of developing composites in diamond-containing systems with a view of obtaining materials with a high thermal conductivity.
Abstract: A major problem challenging specialists in present-day materials sciences is the development of compact, cheap to fabricate heat sinks for electronic devices, primarily for computer processors, semiconductor lasers, high-power microchips, and electronics components. The materials currently used for heat sinks of such devices are aluminum and copper, with thermal conductivities of about 250 W/(m·K) and 400 W/(m·K), respectively. Significantly, the thermal expansion coefficient of metals differs markedly from those of the materials employed in semiconductor electronics (mostly silicon); one should add here the low electrical resistivity metals possess. By contrast, natural single-crystal diamond is known to feature the highest thermal conductivity of all the bulk materials studied thus far, as high as 2,200 W/(m·K). Needless to say, it cannot be applied in heat removal technology because of high cost. Recently, SiC- and AlN-based ceramics have started enjoying wide use as heat sink materials; the thermal conductivity of such composites, however, is inferior to that of metals by nearly a factor two. This prompts a challenging scientific problem to develop diamond-based composites with thermal characteristics superior to those of aluminum and copper, adjustable thermal expansion coefficient, low electrical conductivity and a moderate cost, below that of the natural single-crystal diamond. The present review addresses this problem and appraises the results reached by now in studying the possibility of developing composites in diamond-containing systems with a view of obtaining materials with a high thermal conductivity.

232 citations

Journal ArticleDOI
TL;DR: In this paper, the volume dependence of the Gruneisen parameter, not only shockwave and static compression data, but also experimental information on heat capacity, bulk moduli, volume, and thermal expansion coefficient at zero pressure need to be taken into account.
Abstract: Semiempirical equations of state (EoS) of Au, Pt, MgO, NaCl-B1, and NaCl-B2 based on expanded Mie–Gruneisen–Debye approach, which are consistent both with the Mie–Gruneisen–Bose–Einstein approach and the thermochemical, X-ray, ultrasonic and shock-wave data in a wide pressure-temperature range, have been constructed. It is shown that to determine the volume dependence of the Gruneisen parameter, not only shock-wave and static compression data, but also experimental information on heat capacity, bulk moduli, volume, and thermal expansion coefficient at zero pressure need to be taken into account. Intrinsic anharmonicity is of great importance at construction of EoS at high temperatures and x=V/V 0>1. Cross-comparison of the current equations of state with independent measurements shows that these EoS may be used as the internally consistent and independent pressure scales in a wide range of temperatures and pressures.

232 citations

Journal ArticleDOI
TL;DR: In this article, the relaxation process of the thermal strain in a GaN film due to the thermal expansion coefficient difference in the GaN(0001)/α-Al2O3(0001) heterostructure is studied by varying the film thickness of GaN in a wide range from 1 to 1200 µm.
Abstract: The relaxation process of the thermal strain in a GaN film due to the thermal expansion coefficient difference in the GaN(0001)/α-Al2O3(0001) heterostructure is studied by varying the film thickness of GaN in a wide range from 1 to 1200 µm. The lattice constant c has a large value of 5.191 A at a film thickness less than a few microns, while it decreases to about 150 µm, and becomes constant above 150 µm, indicating that the strain is almost completely relaxed. The intrinsic lattice constants of wurtzite GaN free from the strain, a0 and c0, are determined to be 3.1892±0.0009 and 5.1850±0.0005 A, respectively.

232 citations

Journal ArticleDOI
08 May 1998-Science
TL;DR: High-pressure x-ray diffraction and Raman scattering experiments showed that ZrW2O8 becomes progressively amorphous from 1.5 to 3.5 gigapascals, indicating a general trend between negative thermal expansion and pressure-induced amorphization in highly flexible framework structures.
Abstract: It has recently been shown that zirconium tungstate (ZrW2O8) exhibits isotropic negative thermal expansion over its entire temperature range of stability. This rather unusual behavior makes this compound particularly suitable for testing model predictions of a connection between negative thermal expansion and pressure-induced amorphization. High-pressure x-ray diffraction and Raman scattering experiments showed that ZrW2O8 becomes progressively amorphous from 1.5 to 3.5 gigapascals. The amorphous phase was retained after pressure release, but the original crystalline phase returned after annealing at 923 kelvin. The results indicate a general trend between negative thermal expansion and pressure-induced amorphization in highly flexible framework structures.

231 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023603
20221,249
2021683
2020742
2019759
2018767