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Thermal Hall effect
About: Thermal Hall effect is a research topic. Over the lifetime, 3516 publications have been published within this topic receiving 81036 citations.
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TL;DR: In this paper, ultrathin epitaxial graphite films were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques.
Abstract: We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly ordered sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...
3,315 citations
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TL;DR: In this paper, it is proposed that when a charge current circulates in a paramagnetic metal, a transverse spin imbalance will be generated, giving rise to a spin Hall voltage, in the absence of charge current and magnetic field.
Abstract: It is proposed that when a charge current circulates in a paramagnetic metal a transverse spin imbalance will be generated, giving rise to a ``spin Hall voltage.'' Similarly, it is proposed that when a spin current circulates a transverse charge imbalance will be generated, giving rise to a Hall voltage, in the absence of charge current and magnetic field. Based on these principles we propose an experiment to generate and detect a spin current in a paramagnetic metal.
2,337 citations
TL;DR: A realization of a quantum anomalous Hall system is proposed by magnetically doping thin films of three-dimensional topological insulators and calculating the effects of various dopants and film thicknesses, which are predicted to have long-range ferromagnetic order, potentially joining dilute magnetic semiconductors as candidates for spintronic applications.
Abstract: The anomalous Hall effect is a fundamental transport process in solids arising from the spin-orbit coupling. In a quantum anomalous Hall insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically nontrivial electronic structure, leading to the quantized Hall effect without an external magnetic field. Based on first-principles calculations, we predict that the tetradymite semiconductors Bi2Te3, Bi2Se3, and Sb2Te3 form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in contrast to conventional dilute magnetic semiconductors where free carriers are necessary to mediate the magnetic coupling. In two-dimensional thin films, this magnetic order gives rise to a topological electronic structure characterized by a finite Chern number, with the Hall conductance quantized in units of e2/h (where e is the charge of an electron and h is Planck's constant).
1,725 citations
01 Mar 1991
1,513 citations
TL;DR: This work predicts a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2(e/4pi).
Abstract: The quantum Hall liquid is a novel state of matter with profound emergent properties such as fractional charge and statistics. Existence of the quantum Hall effect requires breaking of the time reversal symmetry caused by an external magnetic field. In this work, we predict a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2 e/4{pi}. The degenerate quantum Landau levels are created by the spin-orbit coupling in conventional semiconductors in the presence of a strain gradient. This new state of matter has many profound correlated properties described by a topological field theory.
1,457 citations