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Showing papers on "Thermoelectric effect published in 1998"


Journal ArticleDOI
TL;DR: In this article, the transport properties of polycrystalline Ge clathrates with general composition Sr8Ga16Ge30 are reported in the temperature range 5'K⩽T'⦽300'K.
Abstract: Transport properties of polycrystalline Ge clathrates with general composition Sr8Ga16Ge30 are reported in the temperature range 5 K⩽T⩽300 K. These compounds exhibit N-type semiconducting behavior with relatively high Seebeck coefficients and electrical conductivity, and room temperature carrier concentrations in the range of 1017–1018 cm−3. The thermal conductivity is more than an order of magnitude smaller than that of crystalline germanium and has a glasslike temperature dependence. The resulting thermoelectric figure of merit, ZT, at room temperature for the present samples is 14 that of Bi2Te3 alloys currently used in devices for thermoelectric cooling. Extrapolating our measurements to above room temperature, we estimate that ZT>1 at T>700 K, thus exceeding that of most known materials.

861 citations


Journal ArticleDOI
01 Aug 1998
TL;DR: In this article, an integrated circuit (IC) approach to thermal microsensors is presented, focusing on thermal sensors with on-chip bias and signal conditioning circuits made by industrial complementary metal-oxide-semiconductor (CMOS) IC technology in combination with post-CMOS micromachining or deposition techniques.
Abstract: An integrated circuit (IC) approach to thermal microsensors is presented. The focus is on thermal sensors with on-chip bias and signal conditioning circuits made by industrial complementary metal-oxide-semiconductor (CMOS) IC technology in combination with post-CMOS micromachining or deposition techniques. CMOS materials and physical effects pertinent to thermal sensors are summarized together with basic structures used for microheaters, thermistors, thermocouples, thermal isolation, and heat sinks. As examples of sensors using temperature measurement, we present micromachined CMOS radiation sensors and thermal converters. Examples for sensors based on thermal actuation include thermal flow and pressure sensors, as well as thermally excited microresonators for position and chemical sensing. We also address sensors for the characterization of process-dependent thermal properties of CMOS materials, such as thermal conductivity, Seebeck coefficient, and heat capacity, whose knowledge is indispensable for thermal sensor design. Last, two complete packaged microsystems-a thermoelectric air-flow sensor and a thermoelectric infrared intrusion detector-are reported as demonstrators.

261 citations


Journal ArticleDOI
TL;DR: In this paper, it was shown that the thermoelectric figure of merit is strongly enhanced in quantum wells and superlattices due to two-dimensional carrier confinement, which leads to an increase of the phonon relaxation rates and a significant drop in the lattice thermal conductivity.
Abstract: Recently, it has been shown that the thermoelectric figure of merit is strongly enhanced in quantum wells and superlattices due to two-dimensional carrier confinement. We predict that the figure of merit can increase even further in quantum well structures with free-surface or rigid boundaries. This additional increase is due to spatial confinement of acoustic phonons and corresponding modification of their group velocities. The latter leads to an increase of the phonon relaxation rates and thus, a significant drop in the lattice thermal conductivity.

230 citations


Journal ArticleDOI
TL;DR: In this article, the Seebeck coefficient and electric conductivity in polyaniline and polypyrrole at different doping levels were measured and it was shown that at 300 K, the general correlation that the logarithm of the electrical conductivity varies linearly with the seebeck coefficient on doping, but with a proportionality substantially in excess of a prediction from simple theory for a single type of mobile carrier.
Abstract: We have measured the Seebeck coefficient and electric conductivity in the air-stable conducting polymers polyaniline and polypyrrole at different doping levels. We find, at 300 K, the general correlation that the logarithm of the electrical conductivity varies linearly with the Seebeck coefficient on doping, but with a proportionality substantially in excess of a prediction from simple theory for a single type of mobile carrier. The correlation is unexpected in its universality and unfavorable in its consequences for thermoelectric applications. A standard model suggests that conduction by carriers of both signs may occur in these doped polymers, which thus leads to reduced thermoelectric efficiency. We also show that polyacetylene (which is not air stable), does exhibit the correlation with the expected proportionality, and, thus, its properties could be more favorable for thermoelectricity.

202 citations


Journal ArticleDOI
TL;DR: In this article, an improved theoretical model of a thermoelectric device which has been developed for geometrical optimization of the thermiolectric element legs and prediction of the performance of an optimum device in power generation mode is presented.

183 citations


Patent
05 May 1998
TL;DR: In this article, the Seebeck coefficient of the sensor lead relative to the first metallic material was shown to be at least ten to one, where the Seebebeck coefficient is defined as the ratio of the temperature at an individual location on an electrode which is formed of a first metal material to the temperature of a second metal material.
Abstract: An apparatus for providing a plurality of signals, each indicative of a temperature at an individual location on an electrode which is formed of a first metallic material includes a plurality of electrically conductive sensor leads, each individually connected to the electrode to form a sensor junction. Each sensor junction has a temperature-dependent voltage associated with it. An electrically conductive common lead is connected to the electrode to form a common junction. The common lead is formed of a second metallic material such that substantially no temperature-dependent voltage is associated with the common junction. Each of the sensor leads is formed of a metallic material different than the first metallic material. Each metallic material has a known Seebeck coefficient relative to the first metallic material. The ratio of the magnitude of the Seebeck coefficient of the sensor lead metallic material relative to the first metallic material and the magnitude of the Seebeck coefficient of the common lead metallic material relative to the first metallic material is at least ten to one. The common lead generally exhibits a thermoelectric output similar to the first metallic material and may be formed of the first metallic material.

128 citations


Journal ArticleDOI
TL;DR: In this paper, the authors investigated the thermoelectric response of correlated electron systems near the density driven Mott transition using the dynamical mean field theory, and showed that the response of the correlated electron system near Mott is positively correlated with the mean field.
Abstract: We investigate the thermoelectric response of correlated electron systems near the density driven Mott transition using the dynamical mean field theory.

120 citations


Journal ArticleDOI
TL;DR: In this article, a large enhancement in the thermoelectric figure of merit for the whole superlattice, Z3DT, is predicted for short-period GaAs/AlAs super-attices relative to bulk GaAs.
Abstract: A large enhancement in the thermoelectric figure of merit for the whole superlattice, Z3DT, is predicted for short-period GaAs/AlAs superlattices relative to bulk GaAs. Various superlattice parameters (superlattice growth direction, superlattice period, and layer thicknesses) are explored to optimize Z3DT, including quantum well states formed from carrier pockets at various high symmetry points in the Brillouin zone. The highest room-temperature Z3DT obtained in the present calculation is 0.41 at the optimum carrier concentration for either (001)- or (111)-oriented GaAs (20 A)/AlAs (20 A) superlattices, which is about 50 times greater than the corresponding ZT for bulk GaAs.

119 citations


Patent
08 Jun 1998
TL;DR: In this paper, a method for cost-effectively producing thermoelectric elements and modules with a multitude of thermocouple couples is disclosed. But this method is based on an additive technology using thermoclate pastes and a patternable insulator layer.
Abstract: A method for cost-effectively producing thermoelectric elements and thermoelectric modules with a multitude of thermoelectric couples is disclosed. This method makes the fabrication of very small size thermoelectric elements and miniaturized, compact, powerful thermoelectric modules possible. Methods of the present invention can be also used to fabricate integrated thermoelectric modules in electrical or other devices. The invented method is based on an additive technology using thermoelectric pastes and a patternable insulator layer. Layers of conductive traces are first fabricated on the two insulating planes. A patternable insulator layer is formed and filled with P- and N-type thermoelectric pastes. The thermoelectric elements are formed during the curing or sintering of the thermoelectric pastes. Sizes and positions of the thermoelectric elements are defined by the patterned insulator layer. Thermoelectric modules are obtained by electrically connecting the P- and N-type thermoelectric elements through the electrical conductive traces on the two insulating planes.

112 citations


Journal ArticleDOI
TL;DR: The Seebeck coefficient was introduced by Peltier and explained by Lord Kelvin this article, who showed that an electrical current passing through the junction of two dissimilar conductors results in the absorption or release of heat in the vicinity of the junction depending on the direction of the current.
Abstract: In materials that conduct both electricity and heat, the thermal and electrical currents are coupled. This thermoelectric coupling can be used to construct devices that act as temperature sensors, heat pumps, refrigerators, or power generators. A temperature difference ΔT across any electrical conductor will generate a corresponding voltage difference ΔV The ratio ΔV/ΔT is defined as the Seebeck coefficient S after Thomas See-beck who first discovered the effect in 1823. Probably the most familiar use of this effect is the thermocouple in which the union of two dissimilar metals generates a voltage in response to an imposed temperature difference. Interestingly an electrical current I passing through the junction of two dissimilar conductors results in the absorption or release of heat in the vicinity of the junction depending on the direction of the current. The ability to heat or cool in this manner was first discovered by Peltier and explained by Lord Kelvin. The latter showed that the amount of heat produced (or absorbed) near the junction is given by ΠI = STI where Π is called the Peltier coefficient and T is the temperature. It is primarily this effect that makes thermoelectric (Peltier) refrigeration possible. Thermoelectric refrigerators and power generators are attractive for many applications as they have no moving parts (except electrons and holes), use no liquid refrigerant, and last indefinitely.

103 citations


Journal ArticleDOI
TL;DR: In this article, the phase equilibrium and thermoelectric properties of Co1−xFexSb3 ternary system up to high iron context x=0.40 were examined.
Abstract: We have examined the phase equilibrium and thermoelectric properties of Co1−xFexSb3 ternary system up to high iron context x=0.40. Traces of Sb were observed in the hot-pressed samples with x⩾0.06, and FeSb2 (Fe0.73Co0.27Sb2) compound with marcasite structure was also observed in the samples with x⩾0.25 by x-ray diffraction. The lattice parameter of Co1−xFexSb3 is slightly larger than that of the binary compound CoSb3. The Seebeck coefficient and the electrical resistivity are generally reduced by the substitution for Co by Fe. The thermal conductivity is also reduced by the substitution especially at high iron content region. These behaviors of the thermoelectric properties in the samples with low iron content are ascribed to the substituted Fe, while those in the samples with high iron content are ascribed to the precipitated FeSb2 (Fe0.73Co0.27Sb2) compound. For x⩽0.04, the figure of merit for Co1−xFexSb3 decreases with increasing x. However, above x=0.06 the figure of merit increases with x and as a r...

Journal ArticleDOI
TL;DR: In this paper, non isothermal electron transport in thin barrier heterostructures using Monte Carlo techniques is investigated and conditions for creating a steady-state temperature gradient and for integrated cooling of electronic components are examined.
Abstract: Non isothermal electron transport in thin barrier heterostructures is investigated using Monte Carlo techniques. Particular attention is paid to the energy balance in thermionic emission, and the Joule heating in the barrier region. By introducing an energy relaxation length, an equation for the temperature distribution inside the device is derived. Conditions for creating a steady-state temperature gradient and for integrated cooling of electronic components are examined.

Journal ArticleDOI
TL;DR: In this paper, the authors measured the thermoelectric properties of layer-structured homologous compounds, (ZnO)mIn2O3 (m = integer), and reported that they would become candidate materials for high-temperature energy conversion, i.e., 1.1 - 1.3 × 10-4 K-1 at 960-1100 K.
Abstract: We first measured the thermoelectric properties of layer-structured homologous compounds, (ZnO)mIn2O3 (m = integer), and reported that they would becomecandidate materials for high-temperature thermoelectric energy conversion.1–4 We further tried to improve their thermoelectric properties by partially substituting yttrium for indium in (ZnO)5In2O3. Though the ionic radius of Y3+ is larger than that of In3+, the a-axis (hexagonal system) elongated and c-axis shrank as Y was substituted for In. The thermoelectric properties were found to vary with a varying amount of Y substitution; 3% Y substitution gave rise to the largest thermoelectric figure of merit, i.e., 1.1 - 1.3 × 10-4 K-1 at 960–1100 K. The abnormal change in the lattice structure by Y substitution was responsible for the unusual behavior of the thermoelectric properties.

Journal ArticleDOI
TL;DR: Theoretical and experimental results for nonisothermal thermionic emission in heterostructures are presented in this article, where single stage InGaAsP-based heterostructure integrated thermionic (HIT) coolers are fabricated and characterized.
Abstract: Thermionic emission current in heterostructures can be used to enhance thermoelectric properties beyond what can be achieved with conventional bulk materials. The Bandgap discontinuity at the junction between two materials is used to selectively emit hot electrons over a barrier layer from cathode to anode. This evaporative cooling can be optimized at various temperatures by adjusting the barrier height and thickness. Theoretical and experimental results for nonisothermal thermionic emission in heterostructures are presented. Single stage InGaAsP-based heterostructure integrated thermionic (HIT) coolers are fabricated and characterized. Cooling on the order of a degree over one micron thick barriers has been observed. Nonisothermal transport in highly doped tall barrier superlattices is also investigated. An order of magnitude improvement in cooling efficiency is predicted for InAlAs/InP superlattices.

Journal ArticleDOI
TL;DR: In this article, the phonon thermal conductivity of Zn0.98Al0.02O was suppressed by adding MgO to ZnO to suppress the thermal conductivities of the material.
Abstract: Addition of MgO to Al-doped ZnO was successful in reduction of the phonon thermal conductivity,κph , in order to suppress the unfavorably high thermal conductivity, κ, of the material in terms of applications to thermoelectric conversion. The electrical conductivity, σ, of Zn0.98Al0.02O decreased with increasing amount of the added MgO, whereas the Seebeck coefficient was virtually unchanged up to (Zn0.9Mg0.1)0.98Al0.02O. Further Al2O3 doping was ineffective in improving σ. The carrier mobility decreased with increasing amount of the added MgO but was independent of the extent of the Al doping. In spite of the significant suppression of κ, the figure of merit was smaller for the MgO-added samples because of the marked decrease of σ.

Patent
25 Aug 1998
TL;DR: In this paper, a portable topical heat transfer device for topically cooling an animal or human when required such as to relieve pain and swelling from injured joints or muscles or the like is presented.
Abstract: A portable topical heat transfer device for topically cooling an animal or human when required such as to relieve pain and swelling from injured joints or muscles or the like. The device comprises a thermoelectric unit having a cold side and a warm side, a DC source which is connected to the thermoelectric unit, a heat sink which is mounted in a heat conductive relationship with the warm side of the thermoelectric unit, a fan for removing heat from the heat sink, and a strap or the like for securing the device to the body of a person.

Patent
10 Apr 1998
TL;DR: In this paper, a thermoelectric refrigerator with a heat transfer system is presented, in which a working fluid is sealed within the heat exchanger and a fluid flow path is provided to allow working fluid in its vapor phase to flow from the evaporating surface to the condensing surface.
Abstract: A thermoelectric refrigerator with a heat transfer system having a thermoelectric device and a heat exchanger with an evaporating surface and a condensing surface. A working fluid is sealed within the heat exchanger. The thermoelectric device includes a thermally conductive hot plate and a thermally conductive cold plate with thermoelectric elements disposed therebetween. The thermoelectric elements are preferably electrically coupled in series and thermally coupled in parallel. The evaporating surface of the heat exchanger is thermally coupled with the hot plate. A fluid flow path is provided to allow working fluid in its vapor phase to flow from the evaporating surface to the condensing surface and working fluid in its liquid phase to flow from the condensing surface to the evaporating surface. The configuration of the heat exchanger will optimize heat transfer by the working fluid from the thermoelectric device.

Patent
Uttam Shyamalindu Ghoshal1
27 Apr 1998
TL;DR: In this paper, a system for efficiently transferring heat from a cold sink to a hot source utilizing thermoelectric cooling effects is disclosed, in which a plurality of thermolectric elements are coupled in a series configuration with a power source.
Abstract: A system for efficiently transferring heat from a cold sink to a hot source utilizing thermoelectric cooling effects is disclosed. A plurality of thermoelectric elements are coupled in a series configuration with a power source. The plurality of thermoelectric elements are coupled in a parallel configuration with the cold sink and the hot source. The surface area of the hot source is greater than the surface area of the cold sink such that the plurality of thermoelectric elements can effectively transfer heat from the cold sink to the hot source in response to the power source. The plurality of thermoelectric can be fabricated on an integrated circuit with analog or digital circuity and effectively cool hot spots.

Journal ArticleDOI
TL;DR: In this paper, a hexagonal Cu-2 Te has been synthesized by mechanical alloying from elemental powders, and the milling time required for the synthesis is longer than that reported for other tellurides.

Journal ArticleDOI
TL;DR: In this article, tetragonal thin films of phase were obtained by thermal evaporation technique; the as-deposited films were non-crystalline and the crystallinity was built in on annealing at 423 K. The films showed n-type conduction; the existence of two distinct activation energies and belongs to two types of level.
Abstract: Stoichiometric thin films of were prepared by the thermal evaporation technique; the as-deposited films were non-crystalline and the crystallinity was built in on annealing at 423 K. The crystal structure as determined by both x-ray and electron diffraction showed that tetragonal films of phase were obtained. Both dark electrical resistivity and thermoelectric power (Seebeck coefficient S) were measured for films before and after annealing. The films showed n-type conduction; the existence of two distinct activation energies and belongs to two types of level: a shallow level of before annealing and after annealing and deep levels of for as deposited films and for annealed film. The deep level was also detected by the space charge limited current technique and the trap density is found to be . The obtained results are explained on the basis of an energy diagram of - proposed by Garlick.

Journal ArticleDOI
TL;DR: In this paper, the thermoelectric figure of merit for a compound material comprising thin semiconductor and wider metallic layers is calculated for a material with a very high ZT if the distance between the barriers is on the order of the energy relaxation length.
Abstract: The thermoelectric figure of merit is calculated for a compound material comprising thin semiconductor and wider metallic layers. The layers are perpendicular to the direction of current. The semiconductor barriers exclude electrons with energies e<μ from the current. This exclusion increases thermopower. One may obtain a material with a very high ZT if the distance between the barriers is on the order of the energy relaxation length. This material should have the resistivity characteristic of a metal and the thermopower characteristic of a semiconductor. An additional significant rise in ZT can be achieved by increasing the contact area at the metal–semiconductor interface.

Journal ArticleDOI
TL;DR: In this paper, the authors reported local density approximation of the electronic structure and thermoelectric properties of a low carrier density metal with a complex Fermi-surface topology and a nontrivial dependence of the Hall concentration on the band filling.
Abstract: We report local-density-approximation calculations of the electronic structure and thermoelectric properties of $\ensuremath{\beta}\ensuremath{-}{\mathrm{Zn}}_{4}{\mathrm{Sb}}_{3}$. The material is a low carrier density metal with a complex Fermi-surface topology and a nontrivial dependence of the Hall concentration on the band filling. The band structure is rather covalent, consistent with experimental observations of good carrier mobility. At a band filling corresponding to the experimental Hall number, the calculated thermopower and temperature dependence are in good agreement with experiment. The high Seebeck coefficient in a metallic material is remarkable, and arises in part from the strong energy dependence of the Fermi surface topology near the experimental band filling. An improved thermoelectric performance is predicted for lower doping levels, i.e., higher Zn concentrations.

Patent
25 Mar 1998
TL;DR: In this article, a π-type thermoelectric conversion component detects and controls temperature and exhibits a cooling performance without the need for mounting a discrete temperature detecting unit, such as a thin film thermistor or doped semiconductor region.
Abstract: A π-type thermoelectric conversion component detects and controls temperature and at the same time exhibits a cooling performance inherently possessed by the thermoelectric conversion component without the need for mounting a discrete temperature detecting unit. To achieve this, a temperature detecting unit, such as a thin film thermistor or doped semiconductor region, is directly integrated on a surface of a substrate forming the thermoelectric component. In one embodiment, a monocrystalline silicon wafer is used as at least one of the opposing substrates of the thermoelectric conversion component, a temperature detecting unit having a diffused resistor is formed therein. An electrode of the temperature detecting unit is connected to an electrode formed on the opposing substrate to reduce the thermal load. There is thus no need for mounting a discrete temperature detecting unit, which places a thermal load on the thermoelectric conversion component, and it is thus possible to perform temperature detection from the same substrate to which a power supply of the thermoelectric conversion component is applied. It is also possible to obtain a cooling performance inherently possessed by the thermoelectric conversion component without the need to increase the performance criteria of the device to incorporate a temperature detecting unit.

Journal ArticleDOI
TL;DR: In this article, the effect on the Hall hole concentration and the thermoelectric coefficient of various elemental impurities in SnTe containing excess Te and in some solid solutions based on it is investigated in the temperature interval 300-900 K. The variation of the kinetic parameters is treated on the basis of the concept of resonance states bound to cation vacancies and to the impurities determining the hole concentration.
Abstract: The effect on the Hall hole concentration and the thermoelectric coefficient of various elemental impurities in SnTe containing excess Te and in some solid solutions based on it is investigated in the temperature interval 300–900 K. The variation of the kinetic parameters is treated on the basis of the concept of resonance states bound to cation vacancies and to the impurities determining the hole concentration. The low values of the thermoelectric coefficient in SnTe is explained by selectivity of scattering of charge carriers with more probable transition of the holes to the resonance states and vice versa. In isomorphic solid solutions based on SnTe, because of a shift in the energy position of the resonance states relative to the band edges and the Fermi level, it is possible to alter the nature of the resonance scattering and raise the thermoelectric coefficient to values which are optimal from the standpoint of obtaining maximum thermoelectric efficiency. In solid solutions of chalcogenides of group-IV elements with SnTe content about 40 mol% of the dimensionless parameter of thermoelectric efficiency ZT=1 at temperatures above 700 K.

Patent
30 Mar 1998
TL;DR: In this article, an instrument for performing highly accurate PCR employing an assembly, a heated cover and an internal computer is described, which is made up of a sample block (36), a number of Peltier thermal electric devices (39) and a heat sink (34).
Abstract: An instrument for performing highly accurate PCR employing an assembly, a heated cover and an internal computer. The assembly is made up of a sample block (36), a number of Peltier thermal electric devices (39) and heat sink (34), clamped together. The sample block (36) temperature is changed exclusively by the thermoelectric devices (39) controlled by the computer. The sample block (36) is of low thermal mass and is constructed of silver. The Peltier devices are designed to provide fast temperature excursions over a wide range. The heat sink (34) has a perimeter trench (44) to minimize edge losses and is adjacent to a continuously variable fan. A perimeter heater is used to improve the thermal uniformity across the sample block (36) to approximately +/- 0.2 °C.

Patent
30 Mar 1998
TL;DR: A thermoelectric device containing at least one thermoelement formed by powder metallurgical techniques including, but not limited to: hot pressing, hot isostatic pressing, press and sinter and mechanical alloying as mentioned in this paper.
Abstract: A thermoelectric device containing at least one thermoelement formed by powder metallurgical techniques including, but not limited to: hot pressing, hot isostatic pressing, press and sinter and mechanical alloying.

Patent
08 May 1998
TL;DR: A chemical reaction chamber system (10) combines devices such as doped polysilicon for heating, bulk silicon for convective cooling, and thermoelectric (TE) coolers (15, 16) to augment the heating and cooling rates of the reaction chamber or chambers as mentioned in this paper.
Abstract: A chemical reaction chamber system (10) that combines devices such as doped polysilicon for heating, bulk silicon for convective cooling, and thermoelectric (TE) coolers (15, 16) to augment the heating and cooling rates of the reaction chamber or chambers (12, 13, 14). In addition the system includes non-silicon-based reaction chambers (12, 13, 14) such as any high thermal conductivity material used in combination with a thermoelectric cooling mechanism (15, 16) (i.e., Peltier device). The heat contained in the thermally conductive part of the system can be used/reused to heat the device, thereby conserving energy and expediting the heating/cooling rates. The system combines a micromachined silicon reaction chamber (12, 13, 14), for example, with an additional module/device (15, 16) for augmented heating/cooling using the Peltier effect. This additional module is particularly useful in extreme environments (very hot or extremely cold) where augmented heating/cooling would be useful to speed up the thermal cycling rates. The chemical reaction chamber system (10) has various applications for synthesis or processing of organic, inorganic, or biochemical reactions, including the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction.

Journal ArticleDOI
TL;DR: In this paper, the p-type Te-doped bismuth telluride compounds were fabricated by both hot pressing and hot extrusion and then investigated the microstructure and thermoelectric properties of the compounds.

Patent
02 Jul 1998
TL;DR: In this article, a thermoelectric element composed of a partition plate having an electrical insulating property, p-and n-type thermolectric semiconductor elements (3A and 3B) of the same number fixed to the partition plate and T-shaped copper electrodes (5) fixed on the bottom sides of the semiconductor element (3 A and 3 B) is shown.
Abstract: A thermoelectric element (1) composed of a partition plate (2) having an electrical insulating property, p- and n-type thermoelectric semiconductor elements (3A) and (3B) of the same number fixed to the partition plate (2) in a state where the semiconductor elements (3A) and (3B) penetrate the plate (2), copper electrode plates (4) which are fixed to the top sides of the semiconductor elements (3A) and (3B), and T-shaped copper electrodes (5) fixed to the bottom sides of the semiconductor elements (3A) and (3B). The lower part of the element (1) from the lower surface of the plate (2) is housed in a cooling container and directly cooled with a liquid coolant, air, etc.

Journal ArticleDOI
TL;DR: The thermoelectric, electric and structural properties of Bi 2 Te 3 thin films grown by MOCVD have been investigated as mentioned in this paper The Seebeck coefficient shows that all the samples were n-type conductors decreasing from 213 to 129μV/K when the carrier concentration increases from 9×10 19 to 3×10 20 cm −3.