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Showing papers on "Thermoelectric effect published in 2008"


Journal ArticleDOI
TL;DR: A new era of complex thermoelectric materials is approaching because of modern synthesis and characterization techniques, particularly for nanoscale materials, and the strategies used to improve the thermopower and reduce the thermal conductivity are reviewed.
Abstract: Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution. Such a development is contingent on identifying materials with higher thermoelectric efficiency than available at present, which is a challenge owing to the conflicting combination of material traits that are required. Nevertheless, because of modern synthesis and characterization techniques, particularly for nanoscale materials, a new era of complex thermoelectric materials is approaching. We review recent advances in the field, highlighting the strategies used to improve the thermopower and reduce the thermal conductivity.

8,999 citations


Journal ArticleDOI
12 Sep 2008-Science
TL;DR: Thermoelectric materials are solid-state energy converters whose combination of thermal, electrical, and semiconductor properties allows them to be used to convert waste heat into electricity or electrical power directly into cooling and heating.
Abstract: Thermoelectric materials are solid-state energy converters whose combination of thermal, electrical, and semiconducting properties allows them to be used to convert waste heat into electricity or electrical power directly into cooling and heating. These materials can be competitive with fluid-based systems, such as two-phase air-conditioning compressors or heat pumps, or used in smaller-scale applications such as in automobile seats, night-vision systems, and electrical-enclosure cooling. More widespread use of thermoelectrics requires not only improving the intrinsic energy-conversion efficiency of the materials but also implementing recent advancements in system architecture. These principles are illustrated with several proven and potential applications of thermoelectrics.

4,700 citations


Journal ArticleDOI
02 May 2008-Science
TL;DR: Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects, which makes these materials useful for cooling and power generation.
Abstract: The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100°C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250°C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86°, 106°, and 119°C with hot-side temperatures set at 50°, 100°, and 150°C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.

4,695 citations



Journal ArticleDOI
10 Jan 2008-Nature
TL;DR: In this article, the authors report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter.
Abstract: Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

3,611 citations


Journal ArticleDOI
25 Jul 2008-Science
TL;DR: A successful implementation through the use of the thallium impurity levels in lead telluride (PbTe) is reported, which results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin.
Abstract: The efficiency of thermoelectric energy converters is limited by the material thermoelectric figure of merit (zT). The recent advances in zT based on nanostructures limiting the phonon heat conduction is nearing a fundamental limit: The thermal conductivity cannot be reduced below the amorphous limit. We explored enhancing the Seebeck coefficient through a distortion of the electronic density of states and report a successful implementation through the use of the thallium impurity levels in lead telluride (PbTe). Such band structure engineering results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin. Use of this new physical principle in conjunction with nanostructuring to lower the thermal conductivity could further enhance zT and enable more widespread use of thermoelectric systems.

3,401 citations


Journal Article
TL;DR: Electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20–300 nm in diameter show promise as high-performance, scalable thermoelectric materials.
Abstract: Approximately 90 per cent of the world’s power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30–40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2–4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20–300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

2,932 citations


Journal ArticleDOI
10 Jan 2008-Nature
TL;DR: Independent measurements of the Seebeck coefficient, the electrical conductivity and the thermal conductivity, combined with theory, indicate that the improved efficiency originates from phonon effects, and these results are expected to apply to other classes of semiconductor nanomaterials.
Abstract: Thermoelectric materials, capable of converting a thermal gradient to an electric field and vice versa, could be useful in power generation and refrigeration. But the fabrication of the available high-performance thermoelectric materials is not easily scaled up to the volumes needed for large-scale heat energy scavenging applications. Nanostructuring improves thermoelectric capabilities of some materials, but good thermoelectric materials tend not to take readily to nanostructuring. How about silicon? It can be processed on a large scale but has poor thermoelectric properties. Two groups now show that silicon's thermoelectric properties can be vastly improved by structuring it into arrays of nanowires and carefully controlling nanowire morphology and doping. So with more development, silicon may have potential as a thermoelectric material. Thermoelectric materials interconvert thermal gradients and electric fields for power generation or for refrigeration1,2. Thermoelectrics currently find only niche applications because of their limited efficiency, which is measured by the dimensionless parameter ZT—a function of the Seebeck coefficient or thermoelectric power, and of the electrical and thermal conductivities. Maximizing ZT is challenging because optimizing one physical parameter often adversely affects another3. Several groups have achieved significant improvements in ZT through multi-component nanostructured thermoelectrics4,5,6, such as Bi2Te3/Sb2Te3 thin-film superlattices, or embedded PbSeTe quantum dot superlattices. Here we report efficient thermoelectric performance from the single-component system of silicon nanowires for cross-sectional areas of 10 nm × 20 nm and 20 nm × 20 nm. By varying the nanowire size and impurity doping levels, ZT values representing an approximately 100-fold improvement over bulk Si are achieved over a broad temperature range, including ZT ≈ 1 at 200 K. Independent measurements of the Seebeck coefficient, the electrical conductivity and the thermal conductivity, combined with theory, indicate that the improved efficiency originates from phonon effects. These results are expected to apply to other classes of semiconductor nanomaterials.

2,557 citations


Journal ArticleDOI
09 Oct 2008-Nature
TL;DR: The spin Seebeck effect allows us to pass a pure spin current, a flow of electron spins without electric currents, over a long distance, and is directly applicable to the production of spin-voltage generators, which are crucial for driving spintronic devices.
Abstract: The generation of electric voltage by placing a conductor in a temperature gradient is called the Seebeck effect. Its efficiency is represented by the Seebeck coefficient, S, which is defined as the ratio of the generated electric voltage to the temperature difference, and is determined by the scattering rate and the density of the conduction electrons. The effect can be exploited, for example, in thermal electric-power generators and for temperature sensing, by connecting two conductors with different Seebeck coefficients, a device called a thermocouple. Here we report the observation of the thermal generation of driving power, or voltage, for electron spin: the spin Seebeck effect. Using a recently developed spin-detection technique that involves the spin Hall effect, we measure the spin voltage generated from a temperature gradient in a metallic magnet. This thermally induced spin voltage persists even at distances far from the sample ends, and spins can be extracted from every position on the magnet simply by attaching a metal. The spin Seebeck effect observed here is directly applicable to the production of spin-voltage generators, which are crucial for driving spintronic devices. The spin Seebeck effect allows us to pass a pure spin current, a flow of electron spins without electric currents, over a long distance. These innovative capabilities will invigorate spintronics research.

1,798 citations


Journal ArticleDOI
TL;DR: A dimensionless thermoelectric figure-of-merit (ZT) of 0.95 in p-type nanostructured bulk silicon germanium (SiGe) alloys is achieved, which is about 90% higher than what is currently used in space flight missions, and half higher than the reported record.
Abstract: A dimensionless thermoelectric figure-of-merit (ZT) of 0.95 in p-type nanostructured bulk silicon germanium (SiGe) alloys is achieved, which is about 90% higher than what is currently used in space flight missions, and 50% higher than the reported record in p-type SiGe alloys. These nanostructured bulk materials were made by using a direct current-induced hot press of mechanically alloyed nanopowders that were initially synthesized by ball milling of commercial grade Si and Ge chunks with boron powder. The enhancement of ZT is due to a large reduction of thermal conductivity caused by the increased phonon scattering at the grain boundaries of the nanostructures combined with an increased power factor at high temperatures.

999 citations


Journal ArticleDOI
TL;DR: In this paper, a peak ZT of about 1.3 at 900°C in an n-type nanostructured SiGe bulk alloy has been achieved by using a nanostructure approach, mainly due to a reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries.
Abstract: The dimensionless thermoelectric figure of merit (ZT) of the n-type silicon germanium (SiGe) bulk alloy at high temperature has remained at about one for a few decades. Here we report that by using a nanostructure approach, a peak ZT of about 1.3 at 900 °C in an n-type nanostructured SiGe bulk alloy has been achieved. The enhancement of ZT comes mainly from a significant reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries. The enhanced ZT will make such materials attractive in many applications such as solar, thermal, and waste heat conversion into electricity.

Journal ArticleDOI
TL;DR: Measurements of the thermal conductivity of high-quality crystals of the cubic I-V-VI2 semiconductors AgSbTe2 and AgBiSe2 show members of this family of compounds are most promising for thermoelectric applications, particularly as p-type materials.
Abstract: We report measurements of the thermal conductivity of high-quality crystals of the cubic I-V-VI2 semiconductors AgSbTe2 and AgBiSe2. The thermal conductivity is temperature independent from 80 to 300 K at a value of approximately 0.70 W/mK. Heat conduction is dominated by the lattice term, which we show is limited by umklapp and normal phonon-phonon scattering processes to a value that corresponds to the minimum possible, where the phonon mean free path equals the interatomic distance. Minimum thermal conductivity in cubic I-V-VI2 semiconductors is due to an extreme anharmonicity of the lattice vibrational spectrum that gives rise to a high Gruneisen parameter and strong phonon-phonon interactions. Members of this family of compounds are therefore most promising for thermoelectric applications, particularly as p-type materials.

Journal ArticleDOI
TL;DR: In this article, a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions is presented, which is based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons.
Abstract: Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.

Journal Article
TL;DR: In this paper, a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions is presented, which is based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons.
Abstract: Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.

Journal ArticleDOI
TL;DR: In this article, the authors report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter.
Abstract: Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

Journal ArticleDOI
TL;DR: A theoretical evaluation of the thermoelectric-related electrical transport properties of 36 half-Heusler (HH) compounds, selected from more than 100 HHs, is carried out in this paper.
Abstract: A theoretical evaluation of the thermoelectric-related electrical transport properties of 36 half-Heusler (HH) compounds, selected from more than 100 HHs, is carried out in this paper. The electronic structures and electrical transport properties are studied using ab initio calculations and the Boltzmann transport equation under the constant relaxation time approximation for charge carriers. The electronic structure results predict the band gaps of these HH compounds, and show that many HHs are narrow-band-gap semiconductors and, therefore, are potentially good thermoelectric materials. The dependence of Seebeck coefficient, electrical conductivity, and power factor on the Fermi level is investigated. Maximum power factors and the corresponding optimal p- or n-type doping levels, related to the thermoelectric performance of materials, are calculated for all HH compounds investigated, which certainly provide guidance to experimental work. The estimated optimal doping levels and Seebeck coefficients show reasonable agreement with the measured results for some HH systems. A few HHs are recommended to be potentially good thermoelectric materials based on our calculations.

Journal ArticleDOI
TL;DR: It is shown that electrical conductivity can be dramatically increased by creating a network of CNTs in the composite, while the thermal conductivity and thermopower remain relatively insensitive to the filler concentration.
Abstract: Segregated-network carbon nanotube (CNT)-polymer composites were prepared, and their thermoelectric properties were measured as a function of CNT concentration at room temperature. This study shows that electrical conductivity can be dramatically increased by creating a network of CNTs in the composite, while the thermal conductivity and thermopower remain relatively insensitive to the filler concentration. This behavior results from thermally disconnected, but electrically connected, junctions in the nanotube network, which makes it feasible to tune the properties in favor of a higher thermoelectric figure of merit. With a CNT concentration of 20 wt %, these composites exhibit an electrical conductivity of 4800 S/m, thermal conductivity of 0.34 W/m x K and a thermoelectric figure of merit (ZT) greater than 0.006 at room temperature. This study suggests that polymeric thermoelectrics are possible and provides the basis for further development of lightweight, low-cost, and nontoxic polymer composites for thermoelectric applications in the future.

Journal ArticleDOI
TL;DR: In this paper, the combination of Ba and Yb fillers inside the voids of the skutterudite structure provides a broad range of resonant phonon scattering and consequently a strong suppression in the lattice thermal conductivity.
Abstract: Filled skutterudites are one of the most promising thermoelectric materials for power generation applications. The choice and concentration of filler atoms are key aspects for achieving high thermoelectric figure of merit values. We report on the high temperature thermoelectric properties in the double-filled skutterudites BaxYbyCo4Sb12. The combination of Ba and Yb fillers inside the voids of the skutterudite structure provides a broad range of resonant phonon scattering and consequently a strong suppression in the lattice thermal conductivity is observed. A dimensionless thermoelectric figure of merit of 1.36 at 800K is achievable for n-type BaxYbyCo4Sb12.

Journal ArticleDOI
TL;DR: In this article, the effects of nano-SiC addition on the thermoelectric and mechanical properties of high-density n-type Bi 2 Te 3 materials were studied.

Journal ArticleDOI
TL;DR: Seebeck's thermoelectric effect has been studied in this paper, where it is shown that, when the junctions of two dissimilar materials are held at different temperatures (ΔT), a voltage (V) is generated that is proportional to ΔT, and the proportionality constant is the Seebeck coeffcient or thermopower: α = −δV/ ΔT. When the circuit is closed, this couple allows for direct conversion of thermal energy (heat) to electrical energy.
Abstract: The field of thermoelectricity began in the early 1800s with the discovery of the thermoelectric effect by Thomas Seebeck. Seebeck found that, when the junctions of two dissimilar materials are held at different temperatures (ΔT), a voltage (V) is generated that is proportional to ΔT. The proportionality constant is the Seebeck coeffcient or thermopower: α = −δV/ΔT. When the circuit is closed, this couple allows for direct conversion of thermal energy (heat) to electrical energy. The conversion effciency, ηTE, is related to a quantity called the fgure of merit, ZT, that is determined by three main material parameters: the thermopower α, the electrical resistivity ρ, and the thermal conductivity κ.

Journal ArticleDOI
TL;DR: This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoeLECTric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity and T = absolute temperature).
Abstract: Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic “real” properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca3Co4O9 and n-type SrTiO3, which exhibit the best thermoelectric figures of merit, ZT (=S2σTκ−1, S = Seebeck coefficient, σ = electrical conductivity, κ = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness (∼0.4 n...

Journal ArticleDOI
TL;DR: It was found that appropriate annealing treatment could reduce both the electrical resistivity and the thermal conductivity at the same time, consequently greatly enhancing the thermoelectric performance.
Abstract: Nanostructured Ag0.8Pbm+xSbTem+2 (m = 18, x = 4.5) system thermoelectric materials have been fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods followed by annealing for several days to investigate the effect on microstructure and thermoelectric performance. It was found that appropriate annealing treatment could reduce both the electrical resistivity and the thermal conductivity at the same time, consequently greatly enhancing the thermoelectric performance. A low electrical resistivity of 2 x 10-3 Ohm-cm and low thermal conductivity of 0.89 W m-1 K-1 were obtained for the sample annealed for 30 days at 700 K. The very low thermal conductivity is supposed to be due to the nanoscopic Ag/Sb-rich regions embedded in the matrix. A high ZT value of 1.5 at 700 K has been achieved for the sample annealed for 30 days.

Journal ArticleDOI
TL;DR: In this paper, a Monte Carlo simulation was applied to study the thermal conductivity of silicon germanium (Si-Ge) nanocomposites, which are of great interest for high-efficiency thermoelectric material development.
Abstract: This paper presents a Monte Carlo simulation scheme to study the phonon transport and the thermal conductivity of nanocomposites. Special attention has been paid to the implementation of periodic boundary condition in Monte Carlo simulation. The scheme is applied to study the thermal conductivity of silicon germanium (Si-Ge) nanocomposites, which are of great interest for high-efficiency thermoelectric material development. The Monte Carlo simulation was first validated by successfully reproducing the results of (two-dimensional) nanowire composites using the deterministic solution of the phonon Boltzmann transport equation reported earlier and the experimental thermal conductivity of bulk germanium, and then the validated simulation method was used to study (three-dimensional) nanoparticle composites, where Si nanoparticles are embedded in Ge host. The size effects of phonon transport in nanoparticle composites were studied, and the results show that the thermal conductivity of nanoparticle composites can be lower than that of the minimum alloy value, which is of great interest to thermoelectric energy conversion. It was also found that randomly distributed nanopaticles in nanocomposites rendered the thermal conductivity values close to that of periodic aligned patterns. We show that interfacial area per unit volume is a useful parameter to correlate the size effect of thermal conductivity in nanocomposites. The key for the thermal conductivity reduction is to have a high interface density where nanoparticle composites can have a much higher interface density than the simple ID stacks, such as superlattices. Thus, nanocomposites further benefit the enhancement of thermoelectric performance in terms of thermal conductivity reduction. The thermal conductivity values calculated by this work qualitatively agrees with a recent experimental measurement of Si-Ge nanocomposites.

Journal ArticleDOI
TL;DR: In this paper, a single-component system of silicon nanowires for cross-sectional areas of 10nm, 15nm, 20nm, and 20nm was presented, achieving an approximately 100-fold improvement over bulk Si over a broad temperature range.
Abstract: Thermoelectric materials, capable of converting a thermal gradient to an electric field and vice versa, could be useful in power generation and refrigeration. But the fabrication of the available high-performance thermoelectric materials is not easily scaled up to the volumes needed for large-scale heat energy scavenging applications. Nanostructuring improves thermoelectric capabilities of some materials, but good thermoelectric materials tend not to take readily to nanostructuring. How about silicon? It can be processed on a large scale but has poor thermoelectric properties. Two groups now show that silicon's thermoelectric properties can be vastly improved by structuring it into arrays of nanowires and carefully controlling nanowire morphology and doping. So with more development, silicon may have potential as a thermoelectric material. Thermoelectric materials interconvert thermal gradients and electric fields for power generation or for refrigeration1,2. Thermoelectrics currently find only niche applications because of their limited efficiency, which is measured by the dimensionless parameter ZT—a function of the Seebeck coefficient or thermoelectric power, and of the electrical and thermal conductivities. Maximizing ZT is challenging because optimizing one physical parameter often adversely affects another3. Several groups have achieved significant improvements in ZT through multi-component nanostructured thermoelectrics4,5,6, such as Bi2Te3/Sb2Te3 thin-film superlattices, or embedded PbSeTe quantum dot superlattices. Here we report efficient thermoelectric performance from the single-component system of silicon nanowires for cross-sectional areas of 10 nm × 20 nm and 20 nm × 20 nm. By varying the nanowire size and impurity doping levels, ZT values representing an approximately 100-fold improvement over bulk Si are achieved over a broad temperature range, including ZT ≈ 1 at 200 K. Independent measurements of the Seebeck coefficient, the electrical conductivity and the thermal conductivity, combined with theory, indicate that the improved efficiency originates from phonon effects. These results are expected to apply to other classes of semiconductor nanomaterials.

Journal ArticleDOI
TL;DR: In this paper, a continuous transition between metallic and semiconducting materials was found, where the free carrier concentration gradually changes as expected from the Zintl valence formalism.
Abstract: For high temperature thermoelectric applications, Yb_(14)MnSb_(11) has a maximum thermoelectric figure of merit (zT) of ~1.0 at 1273 K. Such a high zT is found despite a carrier concentration that is higher than typical thermoelectric materials. Here, we reduce the carrier concentration with the discovery of a continuous transition between metallic Yb_(14)MnSb_(11) and semiconducting Yb_(14)AlSb_(11). Yb_(14)Mn_(1-x)Al_xSb_(11) forms a solid solution where the free carrier concentration gradually changes as expected from the Zintl valence formalism. Throughout this transition the electronic properties are found to obey a rigid band model with a band gap of 0.5 eV and an effective mass of 3 m_e. As the carrier concentration decreases, an increase in the Seebeck coefficient is observed at the expense of an increased electrical resistivity. At the optimum carrier concentration, a maximum zT of 1.3 at 1223K is obtained, which is more than twice that of the state-of-the-art Si_(0.8)Ge_(0.2) flown by NASA.

Journal ArticleDOI
TL;DR: It is found that while alignment of pores is necessary to preserve power factor values comparable to those of bulk Si, a symmetric arrangement is not required, indicating that nanoporous semiconductors with aligned pores may be highly attractive materials for thermoelectric applications.
Abstract: Room-temperature thermoelectric properties of n-type crystalline Si with periodically arranged nanometer-sized pores are computed using a combination of classical molecular dynamics for lattice thermal conductivity and ab initio density functional theory for electrical conductivity, Seebeck coefficient, and electronic contribution to the thermal conductivity. The electrical conductivity is found to decrease by a factor of 2-4, depending on doping levels, compared to that of bulk due to confinement. The Seebeck coefficient S yields a 2-fold increase for carrier concentrations less than 2 x 10(19) cm(-3), above which S remains closer to the bulk value. Combining these results with our calculations of lattice thermal conductivity, we predict the figure of merit ZT to increase by 2 orders of magnitude over that of bulk. This enhancement is due to the combination of the nanometer size of pores which greatly reduces the thermal conductivity and the ordered arrangement of pores which allows for only a moderate reduction in the power factor. We find that while alignment of pores is necessary to preserve power factor values comparable to those of bulk Si, a symmetric arrangement is not required. These findings indicate that nanoporous semiconductors with aligned pores may be highly attractive materials for thermoelectric applications.

Journal ArticleDOI
TL;DR: These results give unequivocal evidence of essentially temperature-independent lattice dynamics with well-defined phase relations between guest and host dynamics, indicative of a quasi-harmonic coupling between the guests and the host lattice.
Abstract: The low thermal conductivity in filled skutterudites has been ascribed to rattling atoms inducing a phonon glass. Experimental evidence now shows that the phonon glass description is incorrect, and provides essential insight for the development of microscopic models aimed at describing the thermoelectric properties of these materials.

Journal ArticleDOI
TL;DR: In this article, a simple route involving hydrothermal synthesis and hot pressing was used in order to prepare Bi2Te3∕SbTe3 bulk nanocomposites.
Abstract: Nanocomposites with constituent sizes of <50nm are considered as a promising approach to enhance the figure of merit of bulk thermoelectric materials. A simple route involving hydrothermal synthesis and hot pressing was used in this work to prepare Bi2Te3∕Sb2Te3 bulk nanocomposites. It is shown that the composites have a laminated structure composed of Bi2Te3 and Sb2Te3 nanolayers with the thickness varying alternately between 5 and 50nm. The transport measurements indicate that the nanoscale laminated structure improves the thermoelectric performance with the maximal dimensionless figure of merit of 1.47 for the nanocomposite hot pressed from Bi2Te3 and Sb2Te3 nanopowders.

Journal ArticleDOI
TL;DR: Practical implementation key points of pyroelectric energy harvesting are presented showing that the different thermodynamic cycles are feasible and potentially effective, even compared to thermoelectric devices.
Abstract: In the framework of microgenerators, we present in this paper the key points for energy harvesting from temperature using ferroelectric materials. Thermoelectric devices profit from temperature spatial gradients, whereas ferroelectric materials require temporal fluctuation of temperature, thus leading to different applications targets. Ferroelectric materials may harvest perfectly the available thermal energy whatever the materials properties (limited by Carnot conversion efficiency) whereas thermoelectric material's efficiency is limited by materials properties (ZT figure of merit). However, it is shown that the necessary electric fields for Carnot cycles are far beyond the breakdown limit of bulk ferroelectric materials. Thin films may be an excellent solution for rising up to ultra-high electric fields and outstanding efficiency. Different thermodynamic cycles are presented in the paper: principles, advantages, and drawbacks. Using the Carnot cycle, the harvested energy would be independent of materials properties. However, using more realistic cycles, the energy conversion effectiveness remains dependent on the materials properties as discussed in the paper. A particular coupling factor is defined to quantify and check the effectiveness of pyroelectric energy harvesting. It is defined similarly to an electromechanical coupling factor as k2 = p2thetas0/(epsivthetas 33 CE), where p, thetas0, epsivthetas 33, Ce are pyroelectric coefficient, maximum working temperature, dielectric permittivity, and specific heat, respectively. The importance of the electrothermal coupling factor is shown and discussed as an energy harvesting figure of merit. It gives the effectiveness of all techniques of energy harvesting (except the Carnot cycle). It is finally shown that we could reach very high efficiency using lang111rang0.75Pb(Mg1/3Nb2/3)-0.25PbTiO3 single crystals and synchronized switch harvesting on inductor (almost 50% of Carnot efficiency). Finally, practical implementation key points of pyroelectric energy harvesting are presented showing that the different thermodynamic cycles are feasible and potentially effective, even compared to thermoelectric devices.

Journal ArticleDOI
TL;DR: In this article, the thermoelectric properties and microstructure of high performance Mg2Si04−xSn06Sbx (0⩽x ⩽0015) alloys have been reported.
Abstract: Mg2(Si,Sn) compounds have shown great promise for thermoelectric applications due to good thermoelectric properties, nontoxicity, and abundantly available constituent elements Herein we report on the thermoelectric properties and microstructure of high performance Mg2Si04−xSn06Sbx (0⩽x⩽0015) alloys The state-of-the-art ZT value of ∼11 has been attained in the samples with x=00075 due to the relatively low thermal conductivity In light of the simple cubic structure and mostly light constituent elements, the reduction in lattice thermal conductivity has been discussed in connection with a fairly large amount of in situ formed nanostructures in these samples