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Showing papers on "Thin film published in 1976"


Journal ArticleDOI
TL;DR: In this paper, a new calculation following traditional methods is proposed for deducing optical constants and thickness from the fringe pattern of the transmission spectrum of a thin transparent dielectric film surrounded by nonabsorbing media.
Abstract: A new calculation following traditional methods is proposed for deducing optical constants and thickness from the fringe pattern of the transmission spectrum of a thin transparent dielectric film surrounded by non-absorbing media. The particular interest of this method, apart from its easiness, is that it makes a directly programmable calculation possible; the accuracy is of the same order as for the iteration method.

1,499 citations


Journal ArticleDOI
TL;DR: In this article, thin film solar cells, ∼ 1 μm thick, have been fabricated from amorphous silicon deposited from a glow discharge in silane, and the cells were made in a p i n structure by using doping gases in the discharge.
Abstract: Thin film solar cells, ∼1 μm thick, have been fabricated from amorphous silicon deposited from a glow discharge in silane. The cells were made in a p‐i‐n structure by using doping gases in the discharge. The best power conversion efficiency to date is 2.4% in AM‐1 sunlight. The maximum efficiency of thin‐film amorphous silicon solar cells is estimated to be ∼14–15%.

1,158 citations


Journal ArticleDOI
TL;DR: In this article, X-ray and electron beam diffraction analyses have been carried out on thin films deposited from a beam of carbon ions, and results show that the films consist of a polycrystalline background of cubic diamond with a particle size of 50-100 A with single-crystal regions up to 5 μm in diameter.
Abstract: X‐ray and electron beam diffraction analyses have been carried out on thin films deposited from a beam of carbon ions. Results show that the films consist of a polycrystalline background of cubic diamond with a particle size of 50–100 A with single‐crystal regions up to 5 μm in diameter.

296 citations


BookDOI
01 Jan 1976
TL;DR: In this article, the authors used a high resolution Magnetic Spectral Resonance Spectrometer (MRS) to measure the depth profile of a single particle from backscattering spectra.
Abstract: of Volume 1.- I. Energy Loss and Straggling.- The Treatment of Energy-Loss Fluctuations in Surface-Layer Analysis by Ion Beams.- Evidence of Solid State Effects in the Energy Loss of 4He Ions in Matter.- Empirical Stopping Cross Sections for 4He Ions.- Determination of Stopping Cross Sections by Rutherford Backscattering.- Depth Profiling of Implanted 3He in Solids by Nuclear Reaction and Rutherford Backscattering.- Energy Loss Straggling of Protons in Thick Absorbers.- Energy Dependence of Proton Straggling in Carbon.- Energy Straggling of 4He Ions in Al and Cu in the Backscattering Geometry.- Energy Spreading Calculations and Consequences.- Analysis of Nuclear Scattering Cross Sections by Means of Molecular Ions.- II. Backscattering Analysis.- Determining Concentration vs. Depth Profiles from Backscattering Spectra without Using Energy Loss Values.- Comparative Analysis of Surface Layers by Backscattering and by Auger Electron Spectroscopy.- Analyzing the Formation of a Thin Compound Film by Taking Moments on Backscattering Spectra.- Computer Analysis of Nuclear Backscattering.- Some Practical Aspects of Depth Profiling Gases in Metals by Proton Backscattering: Application to Helium and Hydrogen Isotopes.- Depth Profiling of Deuterium and Helium in Metals by Elastic Proton Scattering: A Measurement of the Enhancement of the Elastic Scattering Cross Section over Rutherford Scattering Cross Section.- Near-Surface Investigation by Backscattering of N+ Ions and Grazing Angle Beam Incidence.- The Application of Low Angle Rutherford Backscattering to Surface Layer Analysis.- Measurement of Projected and Lateral Range Parameters for Low Energy Heavy Ions in Silicon by Rutherford Backscattering.- Range Parameters of Heavy Ions in Silicon and Germanium with Reduced Energies from 0.001 ? ? ? 10.- On Problems of Resolving Power in Rutherford Backscattering.- Studies of Surface Contaminations, Composition and Formation of Superconducting Layers of V, Nb3Sn and of Tunneling Elements Using High Energetic Protons Combined with Heavy Ions.- Determination of Implanted Carbon Profiles in NbC Single Crystals from Random Backscattering Spectra.- Pore Size from Resonant Charged Particle Backscattering.- Measurement of Thermal Diffusion Profiles of Gold Electrodes on Amorphous Semiconductor Devices by Deconvolution of Ion Backscattering Spectra.- Enhanced Sensitivity of Oxygen Detection by the 3.05 MeV (?,?) Plastic Scattering.- Progress Report on the Backscattering Standards Project (Abstract).- III. Applications of Backscattering and Combined Techniques.- Ion Beam Studies of Thin Films and Interfacial Reactions.- Studies of Tantalum Nitride Thin Film Resistors.- Investigation of CVD Tungsten Metallizations on Silicon by Backscattering.- Ion Beam Analysis of Aluminium Profiles in Heteroepitaxial Ga1-xAlxAs-Layers.- Analysis of Ga1-xA1xAs-GaAs Heteroepitaxial Layers by Proton Backscattering.- Interdiffusion Kinetics in Thin Film Couples.- Backscattering and T.E.M. Studies of Grain Boundary Diffusion in Thin Metal Films.- The Analysis of Nickel and Chromium Migration Through Gold Layers.- Applications of Ion Beam Analysis to Insulators.- Lithium Ion Backscattering as a Novel Tool for the Charac terization of Oxidized Phases of Aluminum Obtained from Industrial Anodization Procedures.- Investigation of an Amino Suger-Like Compound from the Cell Walls of Bacteria Using Backscattering of MeV Particles.- IV. Equipment.- Versatile Apparatus for Real-Time Profiling of Interacting Thin Films Deposited in Situ.- Application of a High-Resolution Magnetic Spectrometer to Near-Surface Materials Analysis.- Rutherford Backscattering Analysis with Very High Depth Resolution Using an Electrostatic Analysing System.- An Apparatus for the Study of Ion and Photon Emission from Ion Bombarded Surfaces: I. Some Preliminary Results.- Author Index.

286 citations


Journal ArticleDOI
TL;DR: In this paper, the fabrication procedures and characteristics of several thin-film p−CuInSe2/n−CdS heterojunction solar cells are presented, and two modes of operation (illumination through CdS or through InSe2) are discussed, under 100 mW/cm2 tungsten-halogen illumination for 1.2
Abstract: The fabrication procedures and characteristics of several thin‐film p‐CuInSe2/n‐CdS heterojunction solar cells are presented. Two modes of operation (illumination through CuInSe2 or through CdS) are discussed. Efficiencies in the range of 4–5% are reported, under 100 mW/cm2 tungsten‐halogen illumination for 1.2‐cm2 devices. Included are the spectral response and J‐V characteristics for these photovoltaic junctions.

248 citations


Journal ArticleDOI
TL;DR: An attempt was made to explain the optical properties of the resulting TiO(2) films with regard to crystal structure, chemical composition, packing density influenced by the molecular composition of the vapor beam, chemical reaction with the crucible, substrate temperature, oxygen pressure, and deposition rate.
Abstract: In this paper experiments with reactive evaporation of the starting materials Ti, TiO, Ti(2)O(3), Ti(3)O(5), and TiO(2) to obtain nonabsorbing TiO(2) films are under discussion. For the starting materials TiO and Ti(3)O(5) the dependence of the TiO(2) film refractive index on the substrate temperature, oxygen pressure, and deposition rate was measured. For TiO dispersion curves of the resulting TiO(2) films as a function of the substrate temperature during film formation were determined. The successive evaporation of the different starting materials resulted in the formation of lambda/4 TiO(2) films with different refractive indices. This phenomenon was most obvious during the first evaporation. It disappeared after several evaporations in two groups of TiO2 films with different refractive indices. From the beginning only the starting materials Ti and Ti(3)O(5) resulted in TiO(2) films with constant refractive indices. The first material produced a high, the latter a lower film index. Depending on the number of evaporations performed, both types of TiO(2) films can be obtained with TiO. The films and residues in the crucibles were also subjected to chemical analyses. An attempt was made to explain the optical properties of the resulting TiO(2) films with regard to crystal structure, chemical composition, packing density influenced by the molecular composition of the vapor beam, chemical reaction with the crucible, substrate temperature, O(2) pressure, and deposition rate.

217 citations


Journal ArticleDOI
TL;DR: In this paper, the distribution of stress and strain in thin films and substrates from inhomogeneous plane stresses developed in the film during deposition is analyzed using bending-plate method.
Abstract: Calculations are presented for the distribution of stress and strain in thin films and substrates from inhomogeneous plane stresses developed in the film during deposition. The results can be applied to the ’’bending‐plate method’’ of determining the unknown stresses in a film, in which the deformation of the substrate surface is measured. Thereby the local values of the stress tensor within the film plane (averaged through the film thickness) and the center of the stress distribution normal to the film plane can be obtained in principle. A more convenient evaluation based on linear approximations is applicable when the film thickness is small. Restrictions are discussed which result from neglecting the conditions of compatibility for the components of the strain tensor.

184 citations


Journal ArticleDOI
TL;DR: In this article, an energy band model of amorphous GexSe1-x films has been proposed for consistent explanations of experimental data, and measurements of the photoconductivity and the absorption spectra have been made at room temperature.
Abstract: Measurements of electrical and optical properties have been made on GexSe1-x amorphous thin films of about 1 µm thickness. From the experiment of electrical conductivity at various temperatures, two processes of the d.c. conductivity in GexSe1-x films are observed in plots of ln σ against 1/T. The thermoelectric power exhibits a maximum value of p-type conduction at pure Se and a change of the sign from positive to negative at 0.4

165 citations


Journal ArticleDOI
Eberhard Spiller1
TL;DR: Progress in the field of reflective multilayer coatings for the wavelength region between 50 A and 2000 A is reviewed; the theoretical predictions have been confirmed for coatings up to six layers at wavelengths around 2000 A.
Abstract: Progress in the field of reflective multilayer coatings for the wavelength region between 50 A and 2000 A is reviewed. All the coatings contain absorbing materials, absorption losses are minimized by positioning strongly absorbing materials into the nodes of the standing wave inside the coating. Above lambda = 1200 A, ideal coatings with a reflectivity approaching 100% are theoretically possible; the theoretical predictions have been confirmed for coatings up to six layers at wavelengths around 2000 A. Below lambda = 1000 A, no absorption-free material is available that can be used as a spacer layer to cover the antinodes of the standing wave field. This limits the theoretically obtainable reflectivity. However, even at the shortest wavelength a reflectivity of 30% is still possible. Experimental results have been obtained for wavelengths between 100 A and 200 A for coatings up to nine layers. Discrepancies between experiment and theory can be explained as due to insufficient knowledge of the optical constants of the films used. Extensive future work on the optical constants of materials and their dependence on film thickness and deposition conditions is required for further improvement.

135 citations


Journal ArticleDOI
TL;DR: In this paper, thin films of Pb(Zr,Ti)O3 have been fabricated on fused quartz or stainless steel substrates by an electron beam evaporation technique.
Abstract: Thin films of Pb(Zr,Ti)O3 have been fabricated on fused quartz or stainless steel substrates by an electron beam evaporation technique. The quality of the PZT films is examined by the x‐ray diffraction technique. Observation of the D‐E hysteresis loop has shown the films to be ferroelectric. Dielectric anomaly of the film on a stainless steel substrate has been observed around 340 °C.

134 citations


Journal ArticleDOI
TL;DR: In this article, various applicable mechanisms of adhesion, relevant properties of metals and polymers, and techniques of controlling adhesion in metallized polymers are discussed, but the thin metallization of polymers has been emphasized.
Abstract: Organic polymer surfaces are metallized in two general ways: (i) thin film metallization in which metals are deposited by vapor deposition, sputtering, etc. and (ii) relatively thick metal coatings are deposited by means of electroless deposition followed by electrolytic deposition. In the present review paper, various applicable mechanisms—mechanical or interlocking, weak boundary layer, chemical, and electrostatic—of adhesion, relevant properties of metals and polymers, and techniques of controlling adhesion in metallized polymers are discussed, but the thin metallization of polymers has been emphasized. Evidence and mechanisms for the charge transfer across the metal–polymer interface are reviewed and the electrostatic component of adhesion is discussed. Apparently, there is a linear relationship between the charge transferred across the metal–polymer interface and the work‐function difference between the metal and the polymer. It is concluded that the electrostatic component of adhesion may have some ...

Journal ArticleDOI
TL;DR: In this paper, the main features of a passive thin-film display cell based on the electrochemically reversible formation of a tungsten bronze according to the reaction are considered, where a critical requirement of these cells is that Dτ(qCm/Q)2 ≈ 1, where the symbols are, in order, the M+ diffusion coefficient, the required device response time, the electronic charge, the maximum practical volume concentration of M in the WO3 film and lastly the area colouring charge.

Journal ArticleDOI
TL;DR: In this article, the vacuum deposition of CuInCe2 thin films is reported and the temperature dependence of film mobility, conductivity, and carrier concentration are presented and indicate the dominance of the grain-boundary scattering mechanism.
Abstract: The vacuum deposition of CuInCe2 thin films is reported. As‐deposited films are generally n‐type due to selenide deficiencies. The temperature dependence of film mobility, conductivity, and carrier concentration are presented and indicate the dominance of the grain‐boundary scattering mechanism. Mobilities of the range 1–20 cm2/V s are reported for as‐deposited films. Data are also presented for films annealed in Ar atmospheres. Films annealed in Ar/H2Se can be made p‐type with mobilities in the range 1–8 cm2/V s. Electron and x‐ray diffraction data are discussed. Grain size data, especially the consideration of the effects of substrate temperature, are included. Photoconductive decay times are reported for the films.

Journal ArticleDOI
TL;DR: In this paper, the lattice parameter and band gap of ZnxCd1−xS films were found to change almost linearly with composition and electrical resistivity increases from <1 to ≳1010Ω cm as x increases from 0 to 1.
Abstract: ZnxCd1−xS films suitable for use in solar cells have been formed by simultaneous evaporating of ZnS and CdS. Lattice parameter and band gap are found to change almost linearly with composition. Electrical resistivity increases from <1 to ≳1010Ω cm as x increases from 0 to 1. Nonseries‐resistance‐limited ZnxCd1−xS‐CuyS photovoltaic cells have exhibited open‐circuit voltages greater than 0.7 V, apparently due to a better match between the ZnxCd1−xS and CuyS electron affinities.

Journal ArticleDOI
TL;DR: In this article, the authors describe the arrival at the substrate of a thin film and its formation and growth, including simple interfacial adhesion, interdiffusion between two materials, formation of intermediate layers and mechanical adhesion.



Journal ArticleDOI
TL;DR: In this paper, thin films of semiconducting n-type cadmium stannate (Cd2SnO4) have been coated onto different substrate materials by rf sputtering.
Abstract: Thin films of semiconducting n‐type cadmium stannate (Cd2SnO4) have been coated onto different substrate materials by rf sputtering. The films are transparent in the visible and near‐infrared part of the optical spectrum and electrically conductive. Conductivities as high as 6500 Ω−1 cm−1 have been achieved. Transparent electrode coatings can be prepared which have 1 Ω/square electrical sheet resistance and 85% average optical transmission between 5000 and 6500 A.

Journal ArticleDOI
TL;DR: In this paper, the behavior of metal crystallites supported on thin films of alumina was observed in the transmission electron microscope. Butler et al. used a sputtering technique to deposit platinum crystallites on the anodized aluminum foil and the remaining aluminum was dissolved by amalgamation.



Patent
01 Jun 1976

Journal ArticleDOI
TL;DR: In this article, the optical performance of thin semiconductor films deposited from the vapor phase was evaluated for photothermal converters at temperatures of 500°C, and the results showed that they are suitable for applications with a spectral profile that matches the solar emission and thermal reradiation properties.

Journal ArticleDOI
TL;DR: In this paper, the results on thin film interdiffusion of Au and In at room temperature were presented and the intermetallic compounds AuIn2, AuIn, Au7In3 and Au4In were formed.

Patent
11 Aug 1976
TL;DR: In this article, a thin film absorber stack consisting of an absorptive film of titanium, zirconium or hafnium suboxide, subcarbide or subnitride superposed on a reflective film of silver, aluminum or copper display spectrally selective characteristics.
Abstract: Thin film absorber stacks consisting of an absorptive film of titanium, zirconium or hafnium suboxide, subcarbide or subnitride superposed on a reflective film of silver, aluminum or copper display spectrally selective characteristics. The absorptive film may be prepared by reactively sputtering the metal or the metal carbide in argon or other inert gas with small amounts of gas containing carbon, oxygen or nitrogen or their combinations, or by reaction of the metal film in air or other gas.


Journal ArticleDOI
TL;DR: In this paper, the sputtering yield of ionic crystals has been investigated at room temperature and with low ion energies, and the results indicate that sputtering yields are considerable higher than could be accounted for by regular collision cascade theories (e.g. Sigmund).

Journal ArticleDOI
J. C. Knights1
TL;DR: The amorphous alloy system As-Si has been prepared in thin film form using the plasma decomposition of silane-arsine mixtures as discussed by the authors, and electrical and optical measurements show effects characteristic of sub...
Abstract: The amorphous alloy system As-Si has been prepared in thin film form using the plasma decomposition of silane-arsine mixtures. Electrical and optical measurements show effects characteristic of sub...

Journal ArticleDOI
TL;DR: In this paper, an investigation of CuInS 2, CuInSe 2 and CuInTe 2 thin films by X-ray and electron microscopy analyses is presented, and the chalcopyrite structure of these films is discussed.

Journal ArticleDOI
TL;DR: In this paper, the influence of film thickness, electron and ion beam energies, ion beam current density and initial surface roughness on depth resolution was investigated, showing that the width of the transition region increases with the square root of the product of ion beam energy and film thickness.