Showing papers on "Thin film published in 1979"
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11 Jan 1979
TL;DR: In this article, the authors discuss the formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (PLVD) and its application in solvent-gel coatings.
Abstract: J.L. Vossen and W. Kern, Introduction. S.M. Rossnagel, Glow Discharge Plasma and Sources for Etching and Deposition. C.V. Deshpandey and R.F. Bunshah, Evaporation Processes. P.P. Chow, Molecular Beam Epitaxy. R. Parsons, Sputter Deposition Processes. P.C. Johnson, The Cathodic Arc Plasma Deposition of Thin Films. K.F. Jensen and W. Kern, Thermal Chemical Vapor Deposition. K.F. Jensen and T. Kuech, Metal-Organic Chemical Vapor Deposition. J.G. Eden, Photochemical Vapor Deposition. L.C. Klein, Sol-Gel Coatings. R. Reif and W. Kern, Plasma-Enhanced Chemical Vapor Deposition. G. Lucovsky, D.V. Tsu, R.A. Rudder, and R.J. Markunas, Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition. T.M. Mayer and S.D. Allen, Selected Area Processing. H.W. Lehman, Plasma-Assisted Etching. P.R. Puckett, S.L. Michel, and W.E. Hughes, Ion Beam Etching. C.I.H. Ashby, Laser-Driven Etching.
1,250 citations
1,131 citations
TL;DR: In this article, a stable and reproducible current-controlled bistable electrical switching has been observed in polycrystalline organic semiconducting films, where the transition from a high-to low-impedance state occurs with delay and switching times of approximately 15 and 10 nsec.
Abstract: Stable and reproducible current‐controlled bistable electrical switching has been observed in polycrystalline organic semiconducting films. The effect has been observed in a lamellar structure with a film of microcrystalline Cu‐TCNQ between Cu and Al electrodes where the Cu‐TCNQ is grown on a Cu substrate via a spontaneous electrolysis technique. The switching effect is insensitive to moisture and is observed over a large temperature range. The current‐voltage characteristics reveal an abrupt decrease in impedance from 2 MΩ to less than 200 Ω at a field strength of 4×103 V/cm. The transition from a high‐ to low‐impedance state occurs with delay and switching times of approximately 15 and 10 nsec, respectively. Switching with high‐power dissipation yields a low‐impedance memory state which can be erased by application of a short current pulse. An interpretation of this behavior is based on the bulk properties of the mixed valence semiconductor Cu‐TCNQ.
480 citations
TL;DR: In this article, the transverse mechanical resonant frequencies of cantilever beams have been used to calculate Young's modulus of the insulating thin films, which is applicable to a wide range of materials and deposition procedures.
Abstract: Electrostatically deflectable cantilever beams (1000–9000 A thick, 120–8.3 μm long) have been fabricated from a number of thin insulating films prepared by a variety of deposition methods. Measurements of the transverse mechanical resonant frequencies of these beams have been used to calculate Young’s modulus of the insulating thin films. This new technique is relatively simple and accurate and is applicable to a wide range of materials and deposition procedures.
313 citations
TL;DR: In this paper, the chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy.
Abstract: The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.
292 citations
TL;DR: In this article, various properties of dielectric thin films are discussed, including refractive index and absorption coefficient, light scattering, structure, microstructure, density, gas sorption, chemical composition, homogeneity, adhesion, hardness and mechanical stress, and environmental influences.
Abstract: Various properties of dielectric thin films are discussed in this paper: refractive index and absorption coefficient, light scattering, structure, microstructure, density, gas sorption, chemical composition, homogeneity, adhesion, hardness and mechanical stress, and environmental influences.
272 citations
TL;DR: The presence of very thin (6-50 A) films in integrated circuits and separating crystalline grains in ceramics, notably in zinc oxide varistors and in silicon nitride, has been reported using high resolution electron microscopy as mentioned in this paper.
232 citations
TL;DR: In this article, it was shown that the presence of entrapped argon does not cause compressive stresses in thin thin films, and that the estimated magnitudes of the corresponding compressive strains remain invariant over large changes in the argon content.
226 citations
TL;DR: In this article, the properties of phase composition, resistivity and optical constants were investigated and the phases Cu+Cu2O, Cu2O+Cu+CuO, etc.
223 citations
TL;DR: An electrospray system and procedure has been developed for the routine preparation of thin films of involatile molecules for analytical measurements as discussed by the authors, and conditions for reproducible performance have been established.
Abstract: An electrospray system and procedure has been developed for the routine preparation of thin films of involatile molecules for analytical measurements. An anode-cathode design has been developed and conditions for reproducible performance have been established. Solvent systems for polar and nonpolar molecules have been investigated and electron microscopy measurements have been made on the microstructure of the deposits and fraction of surface coverage. The method does not appear to degrade thermally-labile molecules. 4 figures.
204 citations
TL;DR: In this paper, the authors interpreted the absorption of AlN thin films as excitonic absorptions due to transitions across the direct energy gap of about 6.2 eV and 7.8 eV.
Abstract: Optical absorption of AlN thin films shows a ’’knee’’ structure at 6.2 eV and an intense band at 7.8 eV. The structure at 6.2 eV is interpreted as excitonic absorptions due to transitions across the direct energy gap of about 6.2 eV. Dichroism observed at the absorption edge indicates that the transition Γ1v–Γ1c (E∥c) is of lower energy than the transition Γ6v–Γ1c (E⊥c). Strong dichroism in the 7–8‐eV region is thought to cause the birefringence of AlN.
TL;DR: In this article, a focused ion-beam sputtering technique was used to sample lead zirconate titanate (ZrxTi1−x)O3 in an O2 atmosphere.
Abstract: Lead zirconate titanate is a solid solution with nominal composition Pb(ZrxTi1−x)O3. Ferroelectric thin films of this material have been successfully deposited by a focused ion‐beam sputtering technique in an O2 atmosphere. These films were characterized according to composition, crystal structure, and dielectric and ferroelectric properties. The effects of deposition temperature, heat treatment after deposition, and substrate and target material were investigated. The composition of the films was within 1 at.% of the composition of the multicomponent PZT target for substrate temperatures up to 200 °C. The Pb concentration decreased for substrate temperatures above 200 °C. Films deposited at substrate temperatures below 250 °C were microcrystalline. At 300 °C, the pyrochlore phase was obtained. Films with the ferroelectric perovskite structure were deposited above 400 °C, which is the lowest deposition temperature ever reported for this phase. O2 losses during postdeposition annealing resulted in a collap...
TL;DR: In this paper, the authors derived expressions relating the geometric and thermodynamic properties of highly concentrated, monodisperse emulsions to the volume fraction of the dispersed phase for the model of infinitely long cylindrical drops.
TL;DR: In this article, high conductive and transparent thin films of SnO 2 : F and In 2 O 3 : Sn have been prepared using the simple pyrolitic (spray) method.
TL;DR: For economical and efficient utilization of solar energy various types of absorber coatings and preparations can be used for solar collectors as discussed by the authors, and several varieties of commercial and research selective absorbers are reviewed and tabulated for application.
TL;DR: In this article, x-ray studies of freely suspended smectic liquid-crystal films from 2 to g100 layers are presented. Butyloxybenzylidene octylaniline (40.8) has three-dimensional long-range order while thin films are two-dimensional crystals, and three low-temperature phases with different interlayer order in thick films are found.
Abstract: This Letter presents x-ray studies of freely suspended smectic liquid-crystal films from 2 to g100 layers thick. Smectic-$B$ thick films of butyloxybenzylidene octylaniline (40.8) have three-dimensional long-range order while thin films are two-dimensional crystals. Large diffuse scattering is observed from soft shear waves, propagating perpendicular to the layers, and three new low-temperature phases with different interlayer order in thick films are found.
Patent•
01 Oct 1979
TL;DR: An RF plasma deposition apparatus for deposition of silicon nitride films is described in this article, which is adapted to introduce silane gas in a substantially uniform and laminar flow into a coating cavity containing substrates, a ground screen electrode, and a hot RF electrode, within which a glow discharge is ignited.
Abstract: An RF plasma deposition apparatus for depositing a film of material on substrates positioned in a vertical plane and electrically "floating" within the glow discharge. For deposition of silicon nitride films, the apparatus is adapted to introduce silane gas in a substantially uniform and laminar flow into a coating cavity containing substrates, a ground screen electrode, and a "hot" RF electrode, within which a glow discharge is ignited. Elemental nitrogen may be delivered to the coating cavity after being dissociated in a local, separate RF plasma called an "atomizer" cavity. During coating, elemental nitrogen combines with elemental silicon and deposits silicon nitride upon the substrate surface.
TL;DR: The optical constants of amorphous thin films of Sb2S3 prepared by vacuum evaporation were determined by means of transmission electron microscopy as discussed by the authors, and the optical constants in the amorphized films are rather structureless but on crystallization several structures are observed in e2 at energies of 1.88, 2.48, 3.86 and 5.25 eV.
TL;DR: In this paper, a model for the band structure of CuGaTe2 near the point Γ of the Brillouin zone was proposed and three transverse optical mode frequencies were obtained from an analysis of the optical transmission spectra in the photon energy range from 1 to about 3 eV.
TL;DR: In this article, MeV 4He backscattering and X-ray diffraction analysis were used to examine the intermixing of niobium thin films on single-crystal silicon during 28Si+ ion bombardment.
Abstract: MeV 4He backscattering and X-ray diffraction analysis were used to examine the intermixing of niobium thin films on single-crystal silicon during 28Si+ ion bombardment. The ambient temperature dependence of the intermixing is reported. The dependence cannot be explained by either radiation-enhanced diffusion or cascade mixing alone. The silicides, NbSi2, and Nb5Si3, were both observed. Silicide growth was found to be proportional to the square root of the fluence for the case in which the ion range exceeds the film thickness.
TL;DR: In this paper, the formation of iridium silicides from the interaction with single-crystal silicon substrates has been studied from 350 to 1000°C, where possible the kinetics were systematically studied.
Abstract: The formation of iridium silicides from the interaction of iridium films with single‐crystal silicon substrates has been studied from 350 to 1000 °C. Three distinct phases, IrSi, IrSi1.75(?), and IrSi3, were identified. Different modes of formation were observed and investigated. IrSi and IrSi1.75 form in layers parallel to the substrate at temperatures from 350 to 900 °C. The growth of IrSi3 from nuclei that spread laterally occurs at about 1000 °C, where possible the kinetics were systematically studies.
TL;DR: In this article, the pyrolitic spray method was used to obtain high conductive and transparent thin films of SnO 2 :F and In 2 O 3 :Sn. The conditions of preparation were described.
TL;DR: In this article, a two-step technique was used to identify and characterize the CuInS2 thin films produced by sputtering pure copper and pure indium to H2S gas diluted with argon and showed a preferred orientation of the (112) plane parallel to the substrate.
Abstract: CuInS2 thin films have been made from copper, indium, and hydrogen sulfide gas using a two‐step technique which involves exposing Cu‐In films produced by sputtering pure copper and pure indium to H2S gas diluted with argon. X‐ray diffraction, Auger electron spectroscopy, optical transmission, and electrical measurements were used to identify and characterize the CuInS2. The resulting films were all p type with resistivity in the range 0.1–500 Ω cm and showed a preferred orientation of the (112) plane parallel to the substrate.
TL;DR: Sputtering yields of Ag, Au and Pt have been measured for monatomic and polyatomic ions of P, As, Sb and Bi over the energy range 10-250 keV as mentioned in this paper.
TL;DR: In this article, it was shown that the distribution of the hydrogen between these local environments and not the total hydrogen content is the crucial factor in determining defect density in a homogeneous silicon hydrogen compound that contains hydrogen bonded as either Si-H or SiH2.
Abstract: Amorphous Si: H is a materials system that possesses several distinct local environments for the hydrogen. The evidence discussed in this paper suggests that it is the distribution of the hydrogen between these environments and not the total hydrogen content that is the crucial factor in determining defect density. The material that possesses the "optimum" properties for device applications is a homogeneous silicon hydrogen compound that contains hydrogen bonded as either Si-H or SiH2. The primary structural defect in this system is a void associated with (SiH2)n. These voids are oriented parallel to the growth direction of the film and the dangling bonds on their internal surfaces form deep defect states that act as efficient non-radiative recombination centers.
TL;DR: In this paper, a thin film photovoltaic cell of CdS/Cu 2 S was designed and fabricated to achieve high energy conversion efficiency of 14-15% using a (CdZn)S/cu 2 S junction.
TL;DR: In this article, the authors describe thin film microporosity in terms of the vacancies and voids incorporated during the deposition processes and their effects on the physical properties of thin films are discussed.
TL;DR: In this paper, a thin-film semiconductor NO x sensor has been fabricated by reactive RF sputtering from a tin target, which is highly sensitive and selective toward detecting NO x in air.
Abstract: A thin-film semiconductor NO x sensor has been fabricated by reactive RF sputtering from a tin target. The gas detection is based on monitoring the sensor resistance change caused by NO x chemisorption on the sensor surface. The sensor is highly sensitive and selective toward detecting NO x in air. The chemical composition of the film was investigated by AES and ESCA. A simple chemisorption model is presented to explain the observed phenomena.
TL;DR: In this article, X-ray photoelectron spectroscopy has been applied to electrochromic, reduced WO 3 and W x Mo 1− x O 3 crystals.
Patent•
20 Jun 1979
TL;DR: In this article, a planar magnetron assembly is used to construct a sputtered thin film coating characterized by a stepwise and/or variable refractive index as a function of film depth.
Abstract: A sputtered thin film coating characterized by a stepwise and/or variable refractive index as a function of film depth. By means of an in-line assembly of planar magnetrons, each magnetron essentially isolated from the others but for a region of sputtering overlap, select materials and combinations of said materials with reactive gases can be continuously deposited upon a dynamic substrate whereby to obtain pre-determined refractive index gradients. Substrates coated with an inhomogeneous thin film exhibit superior non-spectral reflective characteristics particularly desirable for architectural designs and applications.