Showing papers on "Thin film published in 1992"
TL;DR: In this article, the authors developed a surface-enhanced Raman scattering (SERS) model of adsorbates on metal surfaces, where the long-range enhancement by resonances of the macroscopic laser and Stokes field is separated quantitatively from the metal electron-mediated resonance Raman effect.
Abstract: On the basis of different types of experiments, the authors develop implicitly the model of surface-enhanced Raman scattering (SERS) of adsorbates on metal surfaces. The long-range enhancement by resonances of the macroscopic laser and Stokes field is separated quantitatively from the metal electron-mediated resonance Raman effect. The latter mechanism proceeds by increased electron-photon coupling at an atomically rough surface and by temporary charge transfer to orbitals of the adsorbates. This model can account for the chemical specificity and vibrational selectivity of SERS and (partly) for the SERS specificity of the various metals.
1,312 citations
TL;DR: In this article, the authors demonstrate the feasibility of processing, in the conducting form, polyaniline and a variety of polyblends made from polyanILine, which can be melt-processed or processed from solution to enable the fabrication of thin films, sheets, fibers, transparent conductive films, bulk parts.
1,266 citations
TL;DR: In this paper, x-ray photoelectron spectroscopy was used to investigate the oxidation mechanisms at 350°C during this initiation time period, and the oxide thickness increases slowly with oxidation time and the film appears to change from an amorphous TiO2 layer to a crystalline TiO 2 layer.
Abstract: We report a study of the oxidation of TiN. In previous work, the oxidation kinetics for 350–450 °C were reported and an initiation time prior to fast oxidation was identified. In this study, x‐ray photoelectron spectroscopy was used to investigate the oxidation mechanisms at 350 °C during this initiation time period. The oxide thickness increases slowly with oxidation time and the film appears to change from an amorphous TiO2 layer to a crystalline TiO2 layer. Spectral features which are intermediate between TiO2 and TiN are reported and a model involving grain boundary oxidation is proposed. One of the thicker oxides studied was annealed in vacuum to 700 °C. Following oxidation, some of the capping oxide and much of the intermediate material is no longer in the analysis volume and we suggest that the oxygen and nitrogen is being dissolved into the bulk in much the same way that nonevaporable getters are activated before use.
1,078 citations
TL;DR: The influence of the film thickness on this process is investigated and compared to recent theoretical predictions of spinodal decomposition of partially wetting thin films.
Abstract: Thin polystyrene films (100 nm) on silicon substrates undergo dewetting when annealed above the glass transition temperature. Three different stages can be distinguished: The smooth films break up by the creation of cylindrical holes. The holes then grow and form rims ahead of them which finally contact each other creating ``cellular'' structures. The rims are unstable and decay into droplets. The influence of the film thickness on this process is investigated and compared to recent theoretical predictions of spinodal decomposition of partially wetting thin films.
1,034 citations
TL;DR: In this paper, the Pt/C catalyst layer of polymer electrolyte fuel cell electrodes have been developed that substantially increase the utilization efficiency of the catalyst, and the performance of fuel cells based on the thin film catalyst layers are comparable with those of gas diffusion electrode designs that utilize several times as much platinum, thus the specific catalysts in the new structures are significantly higher.
Abstract: New structures for the Pt/C catalyst layer of polymer electrolyte fuel cell electrodes have been developed that substantially increase the utilization efficiency of the catalyst. Fabricating the catalyst layers and gas diffusion backings separately makes it possible to formulate each structure with the properties that are most suitable for its function. In the case of the catalyst layer, the optimal properties are hydrophilicity, thinness, uniformity, and the proper ratio of ionomer and supported catalyst. The catalyst layers are cast from solution as thin films that utilize the ionomer itself as a binder. The thin films are hot pressed directly onto the ionomer membranes, and the hydrophobic gas diffusion backings are inserted when the cells are assembled. The performances of fuel cells based on the thin film catalyst layers are comparable with those of gas diffusion electrode designs that utilize several times as much platinum, thus the specific activities of the Pt catalysts in the new structures are significantly higher.
848 citations
TL;DR: Nanoindentation has become one of the most widely used techniques for measuring the mechanical properties of thin films as discussed by the authors, and has been shown to be useful in the study of optical coatings, hard coatings and materials modified by ion implantation and laser treatment.
Abstract: One of the simplest ways to measure the mechanical properties of a thin film is to deform it on a very small scale. Because indentation testing with a sharp indenter is one convenient means to accomplish this, nanoindentation, or indentation testing at the nanometer scale, has become one of the most widely used techniques for measuring the mechanical properties of thin films. Other reasons for the popularity of nanoindentation stem from the ease with which a wide variety of mechanical properties can be measured without removing the film from its substrate and the ability to probe a surface at numerous points and spatially map its mechanical properties. The utility of the mapping capability is illustrated in Figure 1, which shows several small indentations made at selected points in a microelectronic device. The hardness and modulus of the device were determined at each point. In addition to microelectronics, nanoindentation has also proved useful in the study of optical coatings, hard coatings, and materials with surfaces modified by ion implantation and laser treatment.
792 citations
TL;DR: In this article, biaxially oriented buffer layers of yttrium stabilized zirconia (YSZ) were formed on polycrystalline, Ni-based alloy by ion-beam assisted deposition (IBAD), and subsequently the a-b plane aligned YBa2Cu3 O7−x film was deposited by laser ablation.
Abstract: C‐axis oriented YBa2Cu3O7−x thin films are conventionally obtained on polycrystalline substrates, but a‐ and b‐axes are randomly distributed. Due to the weak links at the high‐angle grain boundaries in the a–b plane, the critical current density (Jc) are comparatively low, from 103 to 104 A/cm2 (77 K, 0 T), and the Jc decreases in magnetic field in a manner similar to bulk YBa2Cu3 O7−x samples. To reduce weak links at the high‐angle grain boundaries, biaxially oriented buffer layers of yttrium stabilized zirconia (YSZ) were formed on polycrystalline, Ni‐based alloy by ion‐beam assisted deposition (IBAD), and subsequently the a–b plane aligned YBa2Cu3 O7−x film was deposited by laser ablation. Jc of 2.5×105 A/cm2 (77 K, 0 T) and 2.2×104 A/cm2 (77 K, 8.0 T) were obtained. A new method to prevent intergranular weak links has been developed for potential applications using practical polycrystalline substrates.
785 citations
TL;DR: In this paper, the optical properties of dilute GaAS1-xNx alloys have been reported and the authors assign the photoluminescence to band-edge transitions and not to isolated N-N pair emission.
Abstract: We present the first report on the optical properties of dilute GaAS1-xNx alloys (0
654 citations
TL;DR: In this paper, two elastic plane strain problems relevant to the cracking of a thin film bonded to a dissimilar semi-infinite substrate material are investigated. But the results of these problems are limited to the case where the crack tip is within the film.
608 citations
TL;DR: In this article, aluminum-doped zinc oxide films have been deposited on soda lime glass substrates from diethyl zinc, triethyl aluminum, and ethanol by atmospheric pressure chemical-vapor deposition in the temperature range 367-444°C.
Abstract: Aluminum‐doped zinc oxide films have been deposited on soda lime glass substrates from diethyl zinc, triethyl aluminum, and ethanol by atmospheric pressure chemical‐vapor deposition in the temperature range 367–444 °C. Film roughness was controlled by the deposition temperature and the dopant concentration. The films have resistivities as low as 3.0 × 10−4 Ω cm, infrared reflectances close to 90%, visible transmissions of 85%, and visible absorptions of 5.0% for a sheet resistance of 4.0 Ω/⧠. The aluminum concentration within doped films measured by electron microprobe is between 0.3 and 1.2 at. %. The electron concentration determined from Hall coefficient measurements is between 2.0 × 1020 and 8.0 × 1020 cm−3, which is in agreement with the estimates from the plasma wavelength. The Hall mobility, obtained from the measured Hall coefficient and dc resistivity, is between 10.0 and 35.0 cm2/V s. Over 90% of the aluminum atoms in the film are electrically active as electron donors. Scanning electron microscopy and x‐ray diffraction show that the films are crystalline with disklike structures of diameter 100–1000 nm and height 30–60 nm. The films have the desired electrical and optical properties for applications in solar cell technology and energy efficient windows.
592 citations
BP1
TL;DR: A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.
Abstract: A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...
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TL;DR: Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals.
TL;DR: In this article, a combination of coating theory and experiment is used to define coating protocols to tailor the deposition process to specific applications, which can be used to tailor coating protocols for specific applications.
Abstract: Sol-gel thin films are formed by gravitational or centrifugal draining accompanied by vigorous drying. Drying largely establishes the shape of the fluid profile, the timescale of the deposition process, and the magnitude of the forces exerted on the solid phase. The combination of coating theory and experiment should define coating protocols to tailor the deposition process to specific applications.
TL;DR: In this article, it was shown that van der Waals epitaxy can be applied to the epitaxial growth of a layered material on an ordinary three-dimensional material substrate, if regular termination of the surface dangling bonds is accomplished.
TL;DR: In this paper, single-crystal epitaxial thin films of the isotropic metallic oxides Sr1−xCaxRuO3 (0 ≤ x ≤ 1) were grown on miscut SrTiO3(100) substrates in situ by 90° off-axis sputtering.
Abstract: Single-crystal epitaxial thin films of the isotropic metallic oxides Sr1–xCaxRuO3 (0 ≤ x ≤ 1) were grown on miscut SrTiO3(100) substrates in situ by 90° off-axis sputtering. These thin films exhibit low isotropic resistivities, excellent chemical and thermal stability, good surface smoothness, and high crystalline quality. Furthermore, the lattice parameters and magnetic properties can be varied by simply changing the strontium/calcium ratio. These epitaxial thin films, and their multilayer structures with other oxide materials, can be used for the fabrication of superconducting, ferroelectric, magneto-optic, and electro-optic devices.
TL;DR: In this article, the impedance of Li3.3PO3.9N0.17 was analyzed using two models in which the frequency dependence of the bulk response was represented by a Cole-Cole dielectric function and a constant phase angle element.
TL;DR: In this paper, an intense, continuous beam of metal clusters and cluster ions is produced by combining a magnetron sputter discharge with a gas aggregation source; the average cluster size can be varied between 50 and more than 106 atoms per cluster.
Abstract: An intense, continuous beam of metal clusters and cluster ions is produced by combining a magnetron sputter discharge with a gas aggregation source. The average cluster size can be varied between 50 and more than 106 atoms per cluster. The sputter discharge is also used to ionize the clusters; between 30% and 80% of them carry a charge without further electron‐impact ionization. Mon− clusters with n≊1200 were separated from the neutral clusters, accelerated, and deposited on a polished Cu substrate. Above a kinetic energy of 6 keV, highly reflecting, strongly adhering thin films are formed on room‐temperature substrates. The films can be mechanically polished, which increases the reflectivity from 95% to 97% at 10.6 μm. Rutherford backscattering spectroscopy data reveal that less than 0.5% argon is incorporated into the films. The standard structure zone model of Movchan, Demchishin, and Thornton [in B. Chapman, Glow Discharge Processes (Wiley, New York, 1982)] is not applicable. The impact of an energetic cluster leads locally to a sudden increase of pressure and temperature. A tiny, high‐temperature spot is formed at each impact of an energetic cluster. The high local temperature present for several picoseconds leads to the observed film properties. The main advantage of the method seems to be that excellent thin films can be produced on room‐temperature substrates. The name ‘‘energetic cluster impact’’ is proposed for this new deposition method.
TL;DR: In this paper, a friction force microscope was used to image and identify compositional domains with a resolution of ∼5 A. Although the topography of the individual domains can be imaged with a standard atomic force microscope, it is the additional information provided by the friction measurement that allows them to be chemically differentiated.
Abstract: THE study of chemical phase separation in multicomponent thin organic films typically involves the addition of a dye which is selectively more soluble in one of the phases, thereby making it possible to probe the domain structures by fluorescence microscopy1–4. The resolution of this approach is generally limited to tens of micrometres. The atomic force microscope, on the other hand, has recently proved useful for imaging organic thin films down to the atomic scale5–9, but this technique provides details of the overall film topography, rather than the chemical composition. Here we show that the recently developed friction force microscope10–13, which simultaneously measures both the normal and lateral forces on the scanning tip, can be used to image and identify compositional domains with a resolution of ∼5 A. Although the topography of the individual domains can be imaged with a standard atomic force microscope, it is the additional information provided by the friction measurement that allows them to be chemically differentiated.
Patent•
16 Jul 1992
TL;DR: In this article, a thin-film structure for solid state thin-filament electrical switching device fabricated of chalcoge-nide material is presented. But the use of a thin insulating layer precludes step coverage faults of the prior art, and the requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the addition of a second thicker layer of in-sulator material.
Abstract: Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching device fabricated of chalcoge-nide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material (16) beneath the body of chalcogenide material (3) so as to carefully define the fila-ment location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eli-minated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of in-sulator material (2) which is deposited only after the chalcogenide material (3) has been formed. This improved structure demon-strates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.
TL;DR: The interaction of Cu with Si separated by thin (50 nm) layers of tantalum, Ta2N, and a nitrogen alloy of Ta has been investigated to determine the factors that affect the success of these materials as diffusion barriers to copper.
Abstract: The interaction of Cu with Si separated by thin (50 nm) layers of tantalum, Ta2N, and a nitrogen alloy of Ta has been investigated to determine the factors that affect the success of these materials as diffusion barriers to copper. Intermixing in these films was followed as a function of annealing temperature by in situ resistance measurements, Rutherford backscattering spectra, scanning electron microscopy, and cross‐section transmission electron microscopy. Ta prevents Cu‐silicon interaction up to 550 °C for 30 min in flowing purified He. At higher temperatures, copper penetration results in the formation of η‘‐Cu3Si precipitates at the Ta‐Si interface. Local defect sites appear on the surface of the sample in the early stages of this reaction. The Ta subsequently reacts with the substrate at 650 °C to form a planar hexagonal‐TaSi2 layer. Ta silicide formation, which does not occur until 700 °C in a Ta‐Si binary reaction couple, is accelerated by the presence of Cu. Nitrogen‐alloyed Ta is a very similar...
Book•
01 Jan 1992
TL;DR: In this paper, the authors present a list of figures and tables for Free Energies and Open Systems, including the following: Figure 1: Surface Morphology and Composition; Figure 2: Surface Composition.
Abstract: Preface. List of Figures. List of Tables. Bulk Phase Equilibra. Free Energies and Open Systems. Elemental Phases. Alloy Phases. Thin Film Structure and Microstructure. Ordering and Clustering. Coherency and Semi-coherency. Surface Morphology and Composition. Surface Composition. Index.
01 Feb 1992
TL;DR: Amorphous oxide and oxynitride lithium electrolyte thin films were synthesized by r.f. magnetron sputtering of lithium silicates and lithium phosphates in Ar, Ar + O2, Ar+ N2, or N2 as mentioned in this paper.
Abstract: Amorphous oxide and oxynitride lithium electrolyte thin films were synthesized by r.f. magnetron sputtering of lithium silicates and lithium phosphates in Ar, Ar + O2, Ar + N2, or N2. The composition, structure, and electrical properties of the films were characterized using ion and electron beam, X-ray, optical, photoelectron, and a.c. impedance techniques. For the lithium phosphosilicate films, lithium ion conductivities as high as 1.4 × 10−6 S/cm at 25 °C were observed, but none of these films selected for extended testing were stable in contact with lithium. On the other hand, a new thin-film lithium phosphorus oxynitride electrolyte, synthesized by sputtering Li3PO4 in pure N2, was found to have a conductivity of 2 × 10-6 S/cm at 25 °C and excellent long-term stability in contact with lithium. Thin-films cells consisting of a 1 μm thick amorphous V2O5 cathode, a 1 μm thick oxynitride electrolyte film, and a 5 μm thick lithium anode were cycled between 3.7 and 1.5 V using discharge rates of up to 100 μA/cm2 and charge rates of up to 20 μA/cm2. The open-circuit voltage of 3.6 to 3.7 V of fully-charged cells remained virtually unchanged after months of storage.
TL;DR: In this article, GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma assisted molecular beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is growing at higher temperatures.
Abstract: GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave‐plasma‐assisted molecular‐beam epitaxy, using a two‐step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is grown at higher temperatures. This method of film growth was shown to lead to good single‐crystalline β‐GaN and to promote lateral growth resulting in smooth surface morphology. The full width at half‐maximum of the x‐ray rocking curve in the best case was found to be 60 min. Optical‐absorption measurements indicate that the band gap of β‐GaN is 3.2 eV and the index of the refraction below the absorption edge is 2.5. Conductivity measurements indicate that the films may have a carrier concentration below 1017 cm−3.
TL;DR: In this article, the structural properties of these IO films were investigated using x-ray diffraction, scanning electron microscope, and electron spectroscopy for chemical analysis, in comparison with the films formed by conventional magnetron sputtering and EB evaporation.
Abstract: Tin‐doped indium oxide (ITO) films with the resistivity less than 1.35×10−4 Ω cm were formed by low voltage dc magnetron sputtering (LVMS) and highly dense plasma‐assisted electron beam (EB) evaporation using the arc plasma generator (HDPE). The structural properties of these films were investigated using x‐ray diffraction, scanning electron microscope, and electron spectroscopy for chemical analysis, in comparison with the films formed by conventional magnetron sputtering and EB evaporation, in order to clarify the key factors for low resistivity. With decreasing plasma impedance and sputtering voltages from 540 to 380 V, the resistivity of the films deposited at Ts=400 °C decreased from 1.92 to 1.34×10−4 Ω cm, due mostly to increase in the carrier density. This LVMS film showed higher crystallinity because of lower damages of high‐energy particles during the deposition, which might increase the number of electrically active species. For HDPE, the film with resistance of 1.23×10−4 Ω cm was deposited at T...
TL;DR: In this article, the authors measured stress variations with temperature as a function of film thickness and a given grain size in pure Al and Al-0.5% Cu films on Si substrates.
Abstract: We have measured stress variations with temperature as a function of film thickness and a given grain size in pure Al and Al–0.5% Cu films on Si substrates. The variation in thickness for a given grain size is brought about by using the same film and the repeated controlled growth and dissolution of a barrier anodic oxide which can be grown uniformly on the film. Stress measurements were made as a function of temperature by measuring wafer curvature after successively removing each 0.1 μm of Al film. The components of strengthening due to the film thickness and the presence of grain boundaries were separated by assuming that the flow stress of the film is simply the sum of these two components. It is found that strengthening due to film thickness varies inversely with the thickness, which is consistent with results obtained by us using laser-reflowed films in an earlier work. The Hall–Petch coefficients calculated from the strengthening due to the grain boundaries are slightly higher than those reported for bulk Al. However, it is also recognized that the variation of the flow stress as g−1, where g is the grain size, is more plausible than that predicted by the Hall–Petch relation (i.e., as g−1/2). The variations of these two components with temperature, and under tension and compression, are discussed.
TL;DR: In this paper, the authors performed writing, reading, erasing and rewriting processes using laser beams on a poly[4]-[[2-(acryloyloxy)ethyl]ethylamino]-4-nitroazobenzene] (pDRlA) film.
Abstract: Writing, reading, erasing and rewriting processes are performed using laser beams on a poly[4'-[[2-(acryloyloxy)ethyl]ethylamino]-4-nitroazobenzene] (pDRlA) film. The writing and erasing are statistical processes and the level of optical anisotropy induced depends on the photon flux directed at the sample. The time evolution of the writing process is investigated. A computer simulation of these processes is performed taking into account a relaxation process in which some of the reoriented trans molecules are randomized by thermal motion.
TL;DR: In this paper, the Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y•Ba•Cu•O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes.
Abstract: Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y‐Ba‐Cu‐O(YBCO) thin‐film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria‐stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a‐ and c‐axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.
TL;DR: The diamond was characterized by Raman spectroscopy and scanning electron microscopy as discussed by the authors, showing that approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to SiC within 3°.
Abstract: Textured diamond films have been deposited on β‐SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.
TL;DR: In this article, the first-order x-ray superlattice reflection intensities indicated that the composition modulation amplitude increased and the coherency strains decreased for Λ increased from 2 to 10 nm.
Abstract: Epitaxial TiN/NbN superlattices with wavelengths/ranging from 1.6 to 450 nm have been grown by reactive magnetron sputtering on MgO(100). Cross-sectional transmission electron microscopy (XTEM) studies showed well-defined superlattice layers. Voided low-angle boundaries, aligned perpendicular to the film plane, were also present. High-resolution images showed misfit dislocations for Λ = 9.4 nm, but not Λ = 4.6 nm. Up to ninth-order superlattice reflections were observed in diffraction, indicating that the interfaces were relatively sharp. Analysis of the first-order x-ray superlattice reflection intensities indicated that the composition modulation amplitude increased and the coherency strains decreased for Λ increased from 2 to 10 nm. Vickers microhardness H was found to increase rapidly with increasing Λ, from 1700 kg/mm2 for a TiN–NbN alloy (i.e., Λ = 0) to a maximum of 4900 kg/mm2 at Λ = 4.6 nm. H decreased gradually for further increases in Λ above 4.6 nm, to H = 2500 kg/mm2 at Λ = 450 nm. The hardness results are compared with theories for strengthening of multilayers.
TL;DR: In this paper, it was shown that for a given temperature, the controlling factor in the resulting thin film phase is the momentum transferred into the film per depositing boron atom.
Abstract: Ion beam assisted evaporation was used to deposit cubic and hexagonal boron nitride thin films. Boron was evaporated and bombardment was by argon and nitrogen ions. The effect of preparation conditions on the resulting phase was studied, and the relationship between the phase and the energy and momentum transferred into the film through ion bombardment was examined. It is shown that for a given temperature, the controlling factor in the resulting thin film phase is the momentum transferred into the film per depositing boron atom. At 300–400 °C a sharp threshold value of momentum‐per‐atom exists below which films are hexagonal and above which they are cubic. For 400 °C this threshold occurred at 200 (eV×amu)1/2 which is equal to 3.3×10−21 m kg s−1. Depositions performed using krypton and xenon instead of argon as the second bombarding gas confirmed this momentum‐per‐atom value. A second threshold was also observed, which was bombarding species dependent, above which either complete resputtering of the deposited material or reversion to the hexagonal phase occurred. Cubic boron nitride deposition was seen to occur in a window of momentum‐per‐atom values between these two thresholds. Using this information it was possible to grow cubic boron nitride using only nitrogen bombardment, although the window of momentum‐per‐atom values for nitrogen is very narrow. The effect of substrate temperature was studied, and it was found to be difficult to grow predominantly cubic phase films below 300–400 °C. The relationship between intrinsic stress and phase of the films is also discussed. A diagram is presented showing film phase as a function of bombardment, substrate temperature, and system chemistry. The parameter of momentum‐per‐atom is shown to combine into a single value the variables of ion beam assisted deposition: deposition rate, ion energy, ion flux, and ion species. It is suggested that, in general, for properties affected by ion bombardment the momentum‐per‐atom transferred into the film is the controlling factor. The results are shown to support momentum transfer as the dominant process in cubic boron nitride thin film formation.