Showing papers on "Thin film published in 2002"
TL;DR: In this paper, the effects of the substrate on the determination of mechanical properties of thin films by nanoindentation were examined, and the properties of aluminum and tungsten films on the following substrates: aluminum, glass, silicon and sapphire.
1,410 citations
TL;DR: An N-doped p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating, N-O substrate as discussed by the authors.
Abstract: An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity=4×101 Ω cm; hole mobility=2 cm2/V s; and hole concentration=9×1016 cm−3. Photoluminescence measurements in this N-doped layer show a much stronger peak near 3.32 eV (probably due to neutral acceptor bound excitons), than at 3.36 eV (neutral donor bound excitons), whereas the opposite is true in undoped ZnO. Calibrated, secondary-ion mass spectroscopy measurements show an N surface concentration of about 1019 cm−3 in the N-doped sample, but only about 1017 cm−3 in the undoped sample.
1,237 citations
TL;DR: In this article, a spin-coated polymer gate dielectric layer was used to obtain a polyvinylphenol-based copolymer-based transistor with a carrier mobility as large as 3 cm2/V's and sub-threshold swing as low as 0.5 V/decade.
Abstract: We have fabricated pentacene organic thin film transistors with spin-coated polymer gate dielectric layers, including cross-linked polyvinylphenol and a polyvinylphenol-based copolymer, and obtained devices with excellent electrical characteristics, including carrier mobility as large as 3 cm2/V s, subthreshold swing as low as 1.2 V/decade, and on/off current ratio of 105. For comparison, we have also fabricated pentacene transistors using thermally grown silicon dioxide as the gate dielectric and obtained carrier mobilities as large as 1 cm2/V s and subthreshold swing as low as 0.5 V/decade.
1,225 citations
TL;DR: The principles of the atomic layer deposition (ALD) method are presented in this paper emphasizing the importance of precursor and surface chemistry, with a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps.
1,166 citations
TL;DR: In this article, metalorganic vapor phase epitaxial growth and structural and photoluminescent characteristics of ZnO nanorods were reported, and they were grown on Al2O3(00⋅1) substrates at 400°C without employing any metal catalysts usually needed in other methods.
Abstract: We report metalorganic vapor-phase epitaxial growth and structural and photoluminescent characteristics of ZnO nanorods. The nanorods were grown on Al2O3(00⋅1) substrates at 400 °C without employing any metal catalysts usually needed in other methods. Electron microscopy revealed that nanorods with uniform distributions in their diameters, lengths, and densities were grown vertically from the substrates. The mean diameter of the nanorods is as narrow as 25 nm. In addition, x-ray diffraction measurements clearly show that ZnO nanorods were grown epitaxially with homogeneous in-plane alignment as well as a c-axis orientation. More importantly, from photoluminescence spectra of the nanorods strong and narrow excitonic emission and extremely weak deep level emission were observed, indicating that the nanorods are of high optical quality.
1,136 citations
Patent•
31 Oct 2002
TL;DR: A natural superlattice homologous single crystal thin film, characterized in that it comprises a composite oxide which is represented by the formula M1M2O3(ZnO)m, is a natural number of 1 or more as discussed by the authors.
Abstract: A natural superlattice homologous single crystal thin film, characterized in that it comprises a composite oxide which is represented by the formula M1M2O3(ZnO)m, wherein M1 is at least one of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more, and has been grown epitaxially on an epitaxial thin film formed on a single crystal substrate, or on said single crystal substrate from which said epitaxial thin film has disappeared, or on a ZnO single crystal; a method for preparing the natural superlattice thin film which comprises depositing the composite oxide, and diffusing the resultant laminated film by heating it. The natural superlattice homologous single crystal thin film is suitably used in an optical device, an electronic device, an X-ray optical device and the like.
1,090 citations
Patent•
11 Sep 2002
TL;DR: In this paper, the authors used a homologous compound single crystal InMO 3 (ZnO) m (M=In, Fe, Ga, or Al; m=an integer of 1 to 49) thin film as an active layer to construct a transparent thin film field effect type transistor having a good switching characteristic.
Abstract: PROBLEM TO BE SOLVED: To solve the problem that in ZnO as a transparent oxide semiconductor, it is difficult to reduce an electric conductivity and it is impossible to constitute a normally off field effect type transistor, or as it is difficult to form an amorphous state, an amorphous transistor adaptive for a large area cannot be manufactured. SOLUTION: In a homologous compound InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) single crystal thin film manufactured by a reactive solid-phase epitaxial method, a deviation from a stoichiometry is very small and a good insulator is obtained near room temperatures. By using the homologous compound single crystal InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) thin film as an active layer, a transparent thin film field effect type transistor having a good switching characteristic can be manufactured by a normally off operation. COPYRIGHT: (C)2004,JPO
1,056 citations
TL;DR: In this paper, the growth direction of ZnO nanowires is determined by electron diffraction, which has no orientation relationship with the substrate, and a strong room-temperature photoluminescence in the nanostructures has been demonstrated.
Abstract: Mass production of ZnO nanowires, nanoribbons, and needle-like rods has been achieved by a simple method of thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. Temperature is the critical experimental parameter for the formation of different morphologies of ZnO nanostructures. Zn or Zn suboxide plays a crucial role for the nucleation of ZnO nanostructures. The as-prepared ZnO nanowires consist of single crystalline cores and thin amorphous shells. As determined by electron diffraction, the growth direction of ZnO nanowires is [001], which has no orientation relationship with the substrate. A strong room-temperature photoluminescence in ZnO nanostructures has been demonstrated.
950 citations
TL;DR: In this article, gate-dependent electrical transport measurements show that the GaN NWs are n-type and that the conductance of NW−FETs can be modulated by more than 3 orders of magnitude.
Abstract: Field effect transistors (FETs) based on individual GaN nanowires (NWs) have been fabricated. Gate-dependent electrical transport measurements show that the GaN NWs are n-type and that the conductance of NW−FETs can be modulated by more than 3 orders of magnitude. Electron mobilities determined for the GaN NW FETs, which were estimated from the transconductance, were as high as 650 cm2/V·s. These mobilities are comparable to or larger than thin film materials with similar carrier concentration and thus demonstrate the high quality of these NW building blocks and their potential for nanoscale electronics. In addition, p−n junctions have been assembled in high yield from p-type Si, and these n-type GaN NWs and their potential applications are discussed.
931 citations
TL;DR: In this paper, the external quantum efficiency of a bulk heterojunction photodetector based on a blend of poly-3 (hexylthiophene) with a methanofullerene is reported to be as high as 76% at the peak maximum at 25°C.
Abstract: The monochromatic external quantum efficiency of a bulk heterojunction photodetector based on a blend of poly-3(hexylthiophene) with a methanofullerene is reported to be as high as 76% at the peak maximum at 25 °C. Analysis of the temperature dependence, the illumination intensity dependence together with absorption measurements in reflection geometry, allow calculation of the internal quantum efficiency of the device close to 100% at the peak maximum. Recombination of photoinduced carriers is negligible or even absent in these photodetectors when operated in the photovoltaic mode. Optical losses in these bulk heterojunction devices are analyzed.
895 citations
TL;DR: In this paper, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed.
Abstract: In this review, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed. Among semiconductors, GaN is unique; most of its applications uses thin GaN films deposited on foreign substrates (materials other than GaN); that is, heteroepitaxial thin films. As a consequence of heteroepitaxy, the quality of the GaN films is very dependent on the properties of the substrate—both the inherent properties such as lattice constants and thermal expansion coefficients, and process induced properties such as surface roughness, step height and terrace width, and wetting behavior. The consequences of heteroepitaxy are discussed, including the crystallographic orientation and polarity, surface morphology, and inherent and thermally induced stress in the GaN films. Defects such as threading dislocations, inversion domains, and the unintentional incorporation of impurities into the epitaxial GaN layer resulting from heteroepitaxy are presented along with their effect on device processing and performance. A summary of the structure and lattice constants for many semiconductors, metals, metal nitrides, and oxides used or considered for GaN epitaxy is presented. The properties, synthesis, advantages and disadvantages of the six most commonly employed substrates (sapphire, 6H-SiC, Si, GaAs, LiGaO 2 , and AlN) are presented. Useful substrate properties such as lattice constants, defect densities, elastic moduli, thermal expansion coefficients, thermal conductivities, etching characteristics, and reactivities under deposition conditions are presented. Efforts to reduce the defect densities and to optimize the electrical and optical properties of the GaN epitaxial film by substrate etching, nitridation, and slight misorientation from the (0 0 0 1) crystal plane are reviewed. The requirements, the obstacles, and the results to date to produce zincblende GaN on 3C-SiC/Si(0 0 1) and GaAs are discussed. Tables summarizing measures of the GaN quality such as XRD rocking curve FWHM, photoluminescence peak position and FWHM, and electron mobilities for GaN epitaxial layers produced by MOCVD, MBE, and HVPE for each substrate are given. The initial results using GaN substrates, prepared as bulk crystals and as free-standing epitaxial films, are reviewed. Finally, the promise and the directions of research on new potential substrates, such as compliant and porous substrates are described.
TL;DR: Al2O3 films with thicknesses ranging from 30 to 3540 A were grown in a viscous flow reactor using ALD with trimethylaluminum and water as the reactants as mentioned in this paper.
TL;DR: In this paper, organic vapor phase deposition was used to grow polycrystalline pentacene channel thin-film transistors, and O2-plasma treated SiO2 was treated with octadecyltrichlorosilane (OTS) prior to Pentacene deposition.
Abstract: Organic vapor phase deposition was used to grow polycrystalline pentacene channel thin-film transistors. Substrate temperature, chamber pressure during film deposition, and growth rate were used to vary the crystalline grain size of pentacene films on O2-plasma treated SiO2 from 0.2 to 5 μm, leading to room-temperature saturation regime field-effect hole mobilities (μeff) from 0.05±0.02 to 0.5±0.1 cm2/V s, respectively. Surface treatment of SiO2 with octadecyltrichlorosilane (OTS) prior to pentacene deposition resulted in μeff⩽1.6 cm2/V s, and drain current on/off ratios of ⩽108 at room temperature, while dramatically reducing the average grain size. X-ray diffraction studies indicate that the OTS treatment decreases the order of the molecular stacks. This suggests an increased density of flat-lying molecules, accompanying the improvement of the hole mobility at the pentacene/OTS interface.
Book•
01 Jan 2002
TL;DR: In this article, the authors present a review of materials science and its application in the field of thin-film analysis and analysis. But their focus is on the properties of the thin-films and their properties.
Abstract: Foreword to First Edition Preface Acknowledgments A Historical Perspective Chapter 1 A Review of Materials Science 1.1. Introduction 1.2. Structure 1.3. Defects in Solids 1.4. Bonds and Bands in Materials 1.5. Thermodynamics of Materials 1.6. Kinetics 1.7. Nucleation 1.8. An Introduction to Mechanical Behavior 1.9. Conclusion Exercises References Chapter 2 Vacuum Science and Technology 2.1. Introduction 2.2. Kinetic Theory of Gases 2.3. Gas Transport and Pumping 2.4. Vacuum Pumps 2.5. Vacuum Systems 2.6. Conclusion Exercises References Chapter 3 Thin-Film Evaporation Processes 3.1. Introduction 3.2. The Physics and Chemistry of Evaporation 3.3. Film Thickness Uniformity and Purity 3.4. Evaporation Hardware 3.5. Evaporation Processes and Applications 3.6. Conclusion Exercises References Chapter 4 Discharges, Plasmas, and Ion-Surface Interactions 4.1. Introduction 4.2. Plasmas, Discharges, and Arcs 4.3. Fundamentals of Plasma Physics 4.4. Reactions in Plasmas 4.5. Physics of Sputtering 4.6. Ion Bombardment Modification of Growing Films 4.7. Conclusion Exercises References Chapter 5 Plasma and Ion Beam Processing of Thin Films 5.1. Introduction 5.2. DC, AC, and Reactive Sputtering Processes 5.3. Magnetron Sputtering 5.4. Plasma Etching 5.5. Hybrid and Modified PVD Processes 5.6. Conclusion Exercises References Chapter 6 Chemical Vapor Deposition 6.1. Introduction 6.2. Reaction Types 6.3. Thermodynamics of CVD 6.4. Gas Transport 6.5. Film Growth Kinetics 6.6. Thermal CVD Processes 6.7. Plasma-Enhanced CVD Processes 6.8. Some CVD Materials Issues 6.9. Safety 6.10. Conclusion Exercises References Chapter 7 Substrate Surfaces and Thin-Film Nucleation 7.1. Introduction 7.2. An Atomic View of Substrate Surfaces 7.3. Thermodynamic Aspects of Nucleation 7.4. Kinetic Processes in Nucleation and Growth 7.5. Experimental Studies of Nucleation and Growth 7.6. Conclusion Exercises References Chapter 8 Epitaxy 8.1. Introduction 8.2. Manifestations of Epitaxy 8.3. Lattice Misfit and Defects in Epitaxial Films 8.4. Epitaxy of Compound Semiconductors 8.5. High-Temperature Methods for Depositing Epitaxial Semiconductor Films 8.6. Low-Temperature Methods for Depositing Epitaxial Semiconductor Films 8.7. Mechanisms and Characterization of Epitaxial Film Growth 8.8. Conclusion Exercises References Chapter 9 Film Structure 9.1. Introduction 9.2. Structural Morphology of Deposited Films and Coatings 9.3. Computational Simulations of Film Structure 9.4. Grain Growth, Texture, and Microstructure Control in Thin Films 9.5. Constrained Film Structures 9.6. Amorphous Thin Films 9.7. Conclusion Exercises References Chapter 10 Characterization of Thin Films and Surfaces 10.1. Introduction 10.2. Film Thickness 10.3. Structural Characterization of Films and Surfaces 10.4. Chemical Characterization of Surfaces and Films 10.5. Conclusion Exercises References Chapter 11 Interdiffusion, Reactions, and Transformations in Thin Films 11.1. Introduction 11.2. Fundamentals of Diffusion 11.3. Interdiffusion in Thin Metal Films 11.4. Compound Formation and Phase Transformations in Thin Films 11.5. Metal-Semiconductor Reactions 11.6. Mass Transport in Thin Films under Large Driving Forces 11.7. Conclusion Exercises References Chapter 12 Mechanical Properties of Thin Films 12.1. Introduction 12.2. Mechanical Testing and Strength of Thin Films 12.3. Analysis of Internal Stress 12.4. Techniques for Measuring Internal Stress in Films 12.5. Internal Stresses in Thin Films and Their Causes 12.6. Mechanical Relaxation Effects in Stressed Films 12.7. Adhesion 12.8. Conclusion Exercises References Index
TL;DR: In this article, thin films of various metal oxides were prepared on glass substrates by a wet process to determine their photocatalytic ability to decompose adsorbed dye and to evaluate their photoinduced hydrophilicity under UV illumination.
Abstract: Thin films of various metal oxides were prepared on glass substrates by a wet process to determine their photocatalytic ability to decompose adsorbed dye and to evaluate their photoinduced hydrophilicity under UV illumination. The metal oxides used in this study are classified into four categories based on their behavior over the two photochemical reaction: (1) active in both photocatalytic oxidation and photoinduced hydrophilicity (TiO2, SnO2, ZnO); (2) only active in photocatalytic oxidation (SrTiO3); (3) only active in photoinduced hydrophilicity (WO3, V2O5); (4) and inactive over both processes (CeO2, CuO, MoO3, Fe2O3, Cr2O3, In2O3). X-ray photoelectron spectroscopy revealed that oxygen defect sites were produced by Ar+ bombardment on the surface of metal oxides, showing photoinduced hydrophilicity. These results indicate that photoinduced hydrophilicity is not induced by the photocatalytic oxidation of organic compounds adsorbed on the surface, but is based on structural changes of the metal oxide s...
TL;DR: There are more than 200 different methods for measuring thin film adhesion, suggesting it to be material, geometry and even industry specific as discussed by the authors, suggesting that the major extrinsic variables are film stress, extent of delamination, thickness and temperature while the major intrinsic ones are modulus, yield strength, the thermodynamic work of adhesion and one or more length scales.
TL;DR: In this article, the nucleation mechanisms of copper during electrodeposition of thin films from sulfate solutions were studied by utilizing the electrochemical techniques (cyclic voltammetry and chronoamperometry) and atomic force microscopy (AFM).
TL;DR: In this paper, a chemical reactor was constructed for growing thin films using atomic layer deposition (ALD) techniques, which utilizes a viscous flow of inert carrier gas to transport the reactants to the sample substrates and to sweep the unused reactants and reaction products out of the reaction zone.
Abstract: A chemical reactor was constructed for growing thin films using atomic layer deposition (ALD) techniques. This reactor utilizes a viscous flow of inert carrier gas to transport the reactants to the sample substrates and to sweep the unused reactants and reaction products out of the reaction zone. A gas pulse switching method is employed for introducing the reactants. An in situ quartz crystal microbalance (QCM) in the reaction zone is used for monitoring the ALD film growth. By modifying a commercially available QCM housing and using polished QCM sensors, quantitative thickness measurements of the thin films grown by ALD are obtained in real time. The QCM is employed to characterize the performance of the viscous flow reactor during Al2O3 ALD.
TL;DR: In this paper, a low-bandgap conjugated polymer (PTPTB) is introduced for thin-film optoelectronic devices working in the near infrared (NIR).
Abstract: A novel low-bandgap conjugated polymer (PTPTB, E-g = similar to1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). Bulk heterojunction photovoltaic cells from solid-state composite films of PTPTB with the soluble fullerene derivative [6,6]-phenyl C-61 butyric acid methyl ester (PCBM) as an active layer shows promising power conversion efficiencies up to 1% under AM1.5 illumination. Furthermore, electroluminescent devices (light-emitting diodes) from thin films of pristine PTPTB show near infrared emission peaking at 800 nm with a turn on voltage below 4 V. The electroluminescence can be significantly enhanced by sensitization of this material with a wide bandgap material such as the poly(p-phenylene vinylene) derivative MDMO-PPV.
TL;DR: In this paper, the properties of Zn1−xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00⋅1) substrates using laser molecular-beam epitaxy were investigated.
Abstract: We report on ferromagnetic characteristics of Zn1−xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00⋅1) substrates using laser molecular-beam epitaxy. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental band gap energy. The Curie temperature obtained from temperature-dependent magnetization curves was 45 K for the film with x=0.3, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.9Mn0.1O at 5 K were 0.9 emu/g and 300 Oe, respectively. For Zn0.7Mn0.3O, the remanent magnetization at 5 K increased to 3.4 emu/g.
TL;DR: In this paper, the authors review different phenomenological descriptions of rough wetting and show how these classical laws must be modified on rough solids, and introduce the questions of hemi-wicking (can a film propagate inside the texture of a solid), rough films, and super-hydrophobicity (how can a solid be designed to become water repellent).
Abstract: After a brief presentation of the classical laws of wetting, we review different phenomenological descriptions of rough wetting, i.e., show how these classical laws must be modified on rough solids. This introduces the questions of hemi-wicking (can a film propagate inside the texture of a solid ?), rough films (is it possible for a liquid film to follow the roughness of a solid ?) and super-hydrophobicity (how can a solid be designed to become water repellent ?).
TL;DR: Epitaxially twinned a axis–oriented La-substituted Bi4Ti3O12 (BLT) thin films whose spontaneous polarization is entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates using SrRuO3 as bottom electrodes.
Abstract: The use of bismuth-layered perovskite films for planar-type nonvolatile ferroelectric random-access memories requires films with spontaneous polarization normal to the plane of growth. Epitaxially twinned a axis–oriented La-substituted Bi4Ti3O12 (BLT) thin films whose spontaneous polarization is entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates using SrRuO3 as bottom electrodes. Even though the (118) orientation competes with the (100) orientation, epitaxial films with almost pure (100) orientation were grown using very thin, strained SrRuO3 electrode layers and kinetic growth conditions, including high growth rates and high oxygen background pressures to facilitate oxygen incorporation into the growing film. Films with the a-axis orientation and having their polarization entirely along the direction normal to the film plane can achieve a remanent polarization of 32 microcoulombs per square centimeter.
TL;DR: In this article, the dependence of the thin film thickness on CO gas sensing properties was investigated, where the film thickness was varied by controlling the deposition time, and the structure of the deposited ZnO:Al films was determined by X-ray diffraction, scanning electron microscopy and atomic force microscopy.
Abstract: Al-doped ZnO films were deposited onto SiO 2 /Si substrates by rf magnetron sputtering system as a CO gas sensor. The dependence of the thin film thickness on CO gas sensing properties was investigated, where the film thickness was varied by controlling the deposition time. The structure of the deposited ZnO:Al films was determined by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The CO gas sensing properties were determined by in situ measurement for surface resistance of the thin film as a function of film thickness, different atmosphere, and operation temperature. It was shown that the films were flat and smooth with (0 0 0 1) preferred orientation. The grain size was increased as the film thickness was increased during deposition. Here, the CO gas sensing properties were relative to the structural characteristics where the maximum sensitivity of 61.6% was obtained at 65 nm film thickness for the operation temperature of 400 °C.
TL;DR: In this paper, structural characteristics of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire substrates via metalorganic chemical vapor deposition were described.
Abstract: In this letter we describe the structural characteristics of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire substrates via metalorganic chemical vapor deposition. Planar growth surfaces have been achieved and the potential for device-quality layers realized by depositing a low temperature nucleation layer prior to high temperature epitaxial growth. The in-plane orientation of the GaN with respect to the r-plane sapphire substrate was confirmed to be [0001]GaN‖[1101]sapphire and [1100]GaN‖[1120]sapphire. This relationship is explicitly defined since the polarity of the a-GaN films was determined using convergent beam electron diffraction. Threading dislocations and stacking faults, observed in plan-view and cross-sectional transmission electron microscope images, dominated the a-GaN microstructure with densities of 2.6×1010 cm−2 and 3.8×105 cm−1, respectively. Submicron pits and crystallographic terraces were observed on the optically specular a-GaN surface with atomic force m...
TL;DR: In this paper, the results of Raman scattering studies of nanocrystalline CeO 2 thin films are presented using the spatial correlation model from which the correlation length has been determined as a function of grain size.
TL;DR: The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates as mentioned in this paper.
Abstract: The effect of uniaxial stress along the c axis on the metal–insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.
IBM1
TL;DR: Organic thin film transistors fabricated by spin-coating this adduct, followed by thermal conversion to pentacene, exhibit the highest mobility reported to date for a solution-processed organic semiconductor.
Abstract: The Lewis acid-catalyzed Diels−Alder reaction of the organic semiconductor pentacene with N-sulfinylacetamide yields a soluble adduct. Spin-coated thin films of this adduct undergo solid-phase conversion to form thin films of pentacene at moderate temperatures. Organic thin film transistors fabricated by spin-coating this adduct, followed by thermal conversion to pentacene, exhibit the highest mobility reported to date for a solution-processed organic semiconductor.