Showing papers on "Thin film published in 2004"

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Abstract: Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.

Enhancement of ferroelectricity in strained BaTiO3 thin films.

Abstract: Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO 3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO 3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

Electron Transport Materials for Organic Light-Emitting Diodes

Abstract: A comprehensive review of the literature on electron transport materials (ETMs) used to enhance the performance of organic light-emitting diodes (OLEDs) is presented. The structure−property−performance relationships of many classes of ETMs, both small-molecule- and polymer-based, that have been widely used to improve OLED performance through control of charge injection, transport, and recombination are highlighted. The molecular architecture, electronic structure (electron affinity and ionization potential), thin film processing, thermal stability, morphology, and electron mobility of diverse organic ETMs are discussed and related to their effectiveness in improving OLED performance (efficiency, brightness, and drive voltage). Some issues relating to the experimental procedures for the estimation of relevant material properties such as electron affinity and electron mobility are discussed. The design of multifunctional electroluminescent polymers whereby light emission and electron- and hole-transport pro...

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Abstract: We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19V, a saturation mobility of 27cm2∕Vs, a gate voltage swing of 1.39V∕decade and an on/off ratio of 3×105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.

A buckling-based metrology for measuring the elastic moduli of polymeric thin films

Abstract: As technology continues towards smaller, thinner and lighter devices, more stringent demands are placed on thin polymer films as diffusion barriers, dielectric coatings, electronic packaging and so on. Therefore, there is a growing need for testing platforms to rapidly determine the mechanical properties of thin polymer films and coatings. We introduce here an elegant, efficient measurement method that yields the elastic moduli of nanoscale polymer films in a rapid and quantitative manner without the need for expensive equipment or material-specific modelling. The technique exploits a buckling instability that occurs in bilayers consisting of a stiff, thin film coated onto a relatively soft, thick substrate. Using the spacing of these highly periodic wrinkles, we calculate the film's elastic modulus by applying well-established buckling mechanics. We successfully apply this new measurement platform to several systems displaying a wide range of thicknessess (nanometre to micrometre) and moduli (MPa to GPa).

Indium oxide-based thin film transistors and circuits

Abstract: In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

Ferroelectricity in ultrathin perovskite films.

Abstract: Understanding the suppression of ferroelectricity in perovskite thin films is a fundamental issue that has remained unresolved for decades. We report a synchrotron x-ray study of lead titanate as a function of temperature and film thickness for films as thin as a single unit cell. At room temperature, the ferroelectric phase is stable for thicknesses down to 3 unit cells (1.2 nanometers). Our results imply that no thickness limit is imposed on practical devices by an intrinsic ferroelectric size effect.

Thin films: unexpected magnetism in a dielectric oxide.

Abstract: It is generally accepted that magnetic order in an insulator requires the cation to have partially filled shells of d or f electrons. Here we show that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping. This discovery challenges our understanding of magnetism in insulators, because neither Hf4+ nor O2- are magnetic ions and the d and f shells of the Hf4+ ion are either empty or full.

Thin Film Piezoelectrics for MEMS

Abstract: Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors with wide dynamic ranges, and low power requirements This paper reviews the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelectric response For non-ferroelectric piezoelectrics such as ZnO and AlN, the importance of film orientation is discussed The high available electrical resistivity in AlN, its compatibility with CMOS processing, and its high frequency constant make it especially attractive in resonator applications The higher piezoelectric response available in ferroelectric films enables lower voltage operation of actuators, as well as high sensitivity sensors Among ferroelectric films, the majority of the MEMS sensors and actuators developed have utilized lead zirconate titanate (PZT) films as the transducer Randomly oriented PZT films show piezoelectric e(31, f) coefficients of about - 7 C/m(2) at the morphotropic phase boundary In PZT films, orientation, composition, grain size, defect chemistry, and mechanical boundary conditions all impact the observed piezoelectric coefficients The highest achievable piezoelectric responses can be observed in {001} oriented rhombohedrally-distorted perovskites For a variety of such films, e(31,f) coefficients of - 12 to - 27 C/m(2) have been reported

Reproducible resistance switching in polycrystalline NiO films

Abstract: Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods. Oxygen to argon gas ratio during deposition was critical in deciding the detailed switching characteristics of either bi-stable memory switching or mono-stable threshold switching. Both metallic nickel defects and nickel vacancies influenced the negative resistance and the switching characteristics. We obtained a distribution of low resistance values which were dependent on the compliance current of high-to-low resistance switching. At 200°C, the low-resistance state kept its initial resistance value while the high-resistance state reached 85% of its initial resistance value after 5×105s. We suggested that the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small-polaron hole hopping conduction.

Highly Efficient Dye-Sensitized Solar Cells with a Titania Thin-Film Electrode Composed of a Network Structure of Single-Crystal-like TiO2 Nanowires Made by the “Oriented Attachment” Mechanism

Abstract: In this study, single-crystal-like anatase TiO(2) nanowires were formed in a network structure by surfactant-assisted self-assembling processes at low temperature. The crystal lattice planes of the nanowires and networks of such wires composed of many nanoparticles were almost perfectly aligned with each other due to the "oriented attachment" mechanism, resulting in the high rate of electron transfer through the TiO(2) nanonetwork with single-crystal-like anatase nanowires. The direction of crystal growth of oriented attachment was controlled by changing the mole ratio of acetylacetone to Ti, that is, regulating both the adsorption of surfactant molecules via control of the reaction rate and the surface energy. A single-crystalline anatase exposing mainly the [101] plane has been prepared, which adsorbed ruthenium dye over 4 times higher as compared to P-25. A high light-to-electricity conversion yield of 9.3% was achieved by applying the titania nanomaterials with network structure as the titania thin film of dye-sensitized solar cells.

Understanding the factors that govern the deposition and morphology of thin films of ZnO from aqueous solution

Abstract: The influence of the choice of complexing ligand, zinc counter-ion, pH, ionic strength, supersaturation, deposition time and substrate on the nature of ZnO films grown from chemical baths (CBD) are discussed. There are significant differences between CBD and similar routes such as hydrothermal methods for ZnO films. Modelling of speciation and experimental results suggest that acicular ZnO morphologies are best obtained by limiting the concentration of one of either Zn2+ or OH− in the presence of a large excess of the other. The presence of a prior ZnO layer can facilitate nucleation at lower levels of supersaturation and enable size tailoring of ZnO columns. The point at which the substrate is introduced into the bath is crucial and can lead to a significant difference in both the width of the rods and optical transparency of the films. HR-TEM has yielded important structural information and a growth mechanism for single crystalline ZnO rods by CBD is described for the first time.

Fundamentals of Mesostructuring Through Evaporation-Induced Self-Assembly†

Abstract: This article gives an overall view of the mechanisms involved in the mesostructuring that takes place during the formation of surfactant-templated inorganic materials by evaporation. Since such a method of preparation is well suited to fabricating thin films by dip coating, spin coating, casting, or spraying, it is of paramount interest to draw a general description of the processes occurring during the formation of self-assembled hybrid organic/inorganic materials, taking into account all critical parameters. The following study is based on very recent works on the meso-organization of thin silica films using tetraethylorthosilicate (TEOS) as the inorganic source and cetyltrimethylammonium bromide (CTAB) as the structuring agent, but we will show that the method can also be extended to other systems based on non-silica oxides and block copolymer surfactants. We demonstrate that the organization depends mainly on the chemical composition of the film when it reaches the modulable steady state (MSS), where the inorganic framework is still flexible and the composition is stable after reaching an equilibrium in the diffusion of volatile species. This MSS state is generally attained seconds after the drying line, and the film's composition depends on various parameters: the relative vapor pressures in the environment, the evaporation conditions, and the chemical conditions in the initial solution. Diagrams of textures, in which the stabilized structures are controlled by local minima, are proposed to explain the complex phenomena associated with mesostructuring induced by evaporation.

Semiconductor device and method for forming the same

Abstract: In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3

Thin‐film silicon solar cell technology

Abstract: This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) thin films (layers), both deposited at low temperatures (200°C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p–i–n-type solar cells, as fabricated so far, are compared in their key parameters (Jsc, FF, Voc) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the μc-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of other PV technologies. Copyright © 2004 John Wiley & Sons, Ltd.

Pentacene Thin Film Growth

Abstract: Pentacene stands out as a model molecule among organic semiconductors due to its ability to form well-ordered films that show a high field effect mobility. We discuss the processes involved in pentacene film growth, emphasizing differences with respect to inorganic films. The influence of growth parameters such as the substrate nature and temperature, the deposition rate, and the kinetic energy of the molecular beam on the structure and morphology of pentacene films are discussed. Finally, we overview recent attempts to model pentacene film nucleation and growth, and draw attention to the role of dislocations.

Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

Abstract: During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc. In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3

Abstract: At the heart of modern oxide chemistry lies the recognition that beneficial (as well as deleterious) materials properties can be obtained by deliberate deviations of oxygen atom occupancy from the ideal stoichiometry. Conversely, the capability to control and confine oxygen vacancies will be important to realize the full potential of perovskite ferroelectric materials, varistors and field-effect devices. In transition metal oxides, oxygen vacancies are generally electron donors, and in strontium titanate (SrTiO3) thin films, oxygen vacancies (unlike impurity dopants) are particularly important because they tend to retain high carrier mobilities, even at high carrier densities. Here we report the successful fabrication, using a pulsed laser deposition technique, of SrTiO3 superlattice films with oxygen doping profiles that exhibit subnanometre abruptness. We profile the vacancy concentrations on an atomic scale using annular-dark-field electron microscopy and core-level spectroscopy, and demonstrate absolute detection sensitivities of one to four oxygen vacancies. Our findings open a pathway to the microscopic study of individual vacancies and their clustering, not only in oxides, but in crystalline materials more generally.

Herringbone Buckling Patterns of Compressed Thin Films on Compliant Substrates

Abstract: A thin metal film vapor depositied on thick elastomer substrate develops an equi-biaxial compressive stress state when the system is cooled due to the large thermal expansion mismatch between the elastomer and the metal At a critical stress, the film undergoes buckling into a family of modes with short wavelengths characteristic of a thin plate on a compliant elastic foundation As the system is further cooled, a highly ordered herringbone pattern has been observed to develop Here it is shown that the herringbone mode constitutes a minimum energy configuration among a limited set of competing modes

Annealing effect on the property of ultraviolet and green emissions of ZnO thin films

Abstract: The mechanism of ultraviolet (UV) and green emission of ZnOthin filmsdeposited on (001) sapphire substrates by pulsed laser deposition was investigated by using postannealing treatment at various annealing temperatures after deposition.Structural, electrical, and optical properties of ZnOfilms have been also observed. As the postannealing temperature increased, the intensity of UV (380 nm) peak and the carrier concentration were decreased while the intensity of the visible (about 490–530 nm) peak and the resistivity were increased. The role of oxygen in ZnOthin film during the annealing process was important to the change of optical properties. The mechanism of the luminescence suggested that UVluminescence of ZnOthin film was related to the transition from near band edge to valence band, and green luminescence of ZnOthin film was caused by the transition from deep donor level to valence band due to oxygen vacancies. The activation energy derived by using the variation of green emission intensity was 1.19 eV.

Solution Casting and Transfer Printing Single-Walled Carbon Nanotube Films

Abstract: This paper presents methods for solution casting and transfer printing collections of individual single-walled carbon nanotubes (SWNTs) onto a wide range of substrates, including plastic sheets. The deposition involves introduction of a solvent that removes surfactant from a suspension of SWNTs as it is applied to a substrate. The subsequent controlled flocculation (cF) produces films of SWNTs with densities that can be varied between a few tubes per square micron to thick multilayers in a single deposition step and with orientation determined by the direction of solution flow. High-resolution rubber stamps inked in this manner can be used to print patterns of tubes with geometries defined by the relief structure on the surface of the stamp. Thin film transistors fabricated with these techniques demonstrate their potential use in flexible “macroelectronic” systems.

High-mobility ultrathin semiconducting films prepared by spin coating

Abstract: The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Superconductivity Modulated by Quantum Size Effects

Abstract: We have fabricated ultrathin lead films on silicon substrates with atomic-scale control of the thickness over a macroscopic area. We observed oscillatory behavior of the superconducting transition temperature when the film thickness was increased by one atomic layer at a time. This oscillating behavior was shown to be a manifestation of the Fabry-Perot interference modes of electron de Broglie waves (quantum well states) in the films, which modulate the electron density of states near the Fermi level and the electron-phonon coupling, which are the two factors that control superconductivity transitions. This result suggests the possibility of modifying superconductivity and other physical properties of a thin film by exploiting well-controlled and thickness-dependent quantum size effects.

Reversible wettability of a chemical vapor deposition prepared ZnO film between superhydrophobicity and superhydrophilicity.

Abstract: A superhydrophobic ZnO thin film was fabricated by the Au-catalyzed chemical vapor deposition method. The surface of the film exhibits hierarchical structure with nanostructures on sub-microstructures. The water contact angle (CA) was 164.3°, turning into a superhydrophilic one (CA < 5°) after UV illumination, which can be recovered through being placed in the dark or being heated. The film was attached tightly to the substrate, showing good stability and durability. The surface structures were characterized by scanning electron microscopy and atomic force microscopy.

Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores

Abstract: Atomic layer deposition of alumina enhanced the molecule sensing characteristics of fabricated nanopores by fine-tuning their surface properties, reducing 1/f noise, neutralizing surface charge to favor capture of DNA and other negative polyelectrolytes, and controlling the diameter and aspect ratio of the pores with near single Angstrom precision. The control over the chemical and physical nature of the pore surface provided by atomic layer deposition produced a higher yield of functional nanopore detectors.