Showing papers on "Thin film published in 2018"

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe 3 GeTe 2 .

Abstract: Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Covalent Organic Frameworks: Structures, Synthesis, and Applications

Abstract: Covalent organic frameworks (COFs) are crystalline porous polymers formed by a bottom-up approach from molecular building units having a predesigned geometry that are connected through covalent bonds. They offer positional control over their building blocks in two and three dimensions. This control enables the synthesis of rigid porous structures with a high regularity and the ability to fine-tune the chemical and physical properties of the network. This Feature Article provides a comprehensive overview over the structures realized to date in the fast growing field of covalent organic framework development. Different synthesis strategies to meet diverse demands, such as high crystallinity, straightforward processability, or the formation of thin films are discussed. Furthermore, insights into the growing fields of COF applications, including gas storage and separations, sensing, electrochemical energy storage, and optoelectronics are provided.

Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation.

Abstract: Perovskite light-emitting diodes (LEDs) are attracting great attention due to their efficient and narrow emission. Quasi-two-dimensional perovskites with Ruddlesden–Popper-type layered structures can enlarge exciton binding energy and confine charge carriers and are considered good candidate materials for efficient LEDs. However, these materials usually contain a mixture of phases and the phase impurity could cause low emission efficiency. In addition, converting three-dimensional into quasi-two-dimensional perovskite introduces more defects on the surface or at the grain boundaries due to the reduction of crystal sizes. Both factors limit the emission efficiency of LEDs. Here, firstly, through composition and phase engineering, optimal quasi-two-dimensional perovskites are selected. Secondly, surface passivation is carried out by coating organic small molecule trioctylphosphine oxide on the perovskite thin film surface. Accordingly, green LEDs based on quasi-two-dimensional perovskite reach a current efficiency of 62.4 cd A−1 and external quantum efficiency of 14.36%.

Highly Reproducible Sn-Based Hybrid Perovskite Solar Cells with 9% Efficiency

Abstract: The low power conversion efficiency (PCE) of tin-based hybrid perovskite solar cells (HPSCs) is mainly attributed to the high background carrier density due to a high density of intrinsic defects such as Sn vacancies and oxidized species (Sn4+) that characterize Sn-based HPSCs. Herein, this study reports on the successful reduction of the background carrier density by more than one order of magnitude by depositing near-single-crystalline formamidinium tin iodide (FASnI3) films with the orthorhombic a-axis in the out-of-plane direction. Using these highly crystalline films, obtained by mixing a very small amount (0.08 m) of layered (2D) Sn perovskite with 0.92 m (3D) FASnI3, for the first time a PCE as high as 9.0% in a planar p–i–n device structure is achieved. These devices display negligible hysteresis and light soaking, as they benefit from very low trap-assisted recombination, low shunt losses, and more efficient charge collection. This represents a 50% improvement in PCE compared to the best reference cell based on a pure FASnI3 film using SnF2 as a reducing agent. Moreover, the 2D/3D-based HPSCs show considerable improved stability due to the enhanced robustness of the perovskite film compared to the reference cell.

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics.

Abstract: Development of conformal n-channel organic phototransistor (OPT) array is urgent for future applications of organic complementary circuits in portable and wearable electronics and optoelectronics. In this work, the ultrathin conformal OPT array based on air-stable n-type PTCDI-C13H27 was fabricated. The OPT array shows excellent electrical and photoelectrical performance, good device uniformity, and remains stable in electron mobility by 83% after 90 days compared to the initial values. Eventhough mobility, on-state current, off-state current, and photocurrent of PTCDI-C13H27 thin film phototransistor show slight decrease with the decreased bending radius, the device still remains the stable photosensitivity as high as 104 when the device is freely adhered on the 2D surfaces and 3D hemispherical sphere, which is in a class with the highest photosensitivity for perylene diimide derivatives. These results present the promising application potential of our conformable air-stable n-type PTCDI-C13H27 OPTs as the photodetection system of curved artificial compound eyes in wearable and portable electronics and optoelectronics.

Surfactant-controlled ink drying enables high-speed deposition of perovskite films for efficient photovoltaic modules

Abstract: Novel photovoltaic technologies such as perovskites hold the promise of a reduced levelized cost of electricity, but the low-cost potential depends on the ability to scale-up solution-based deposition. So far, complex fluid dynamics have limited the solution deposition of uniform pinhole-free organic–inorganic perovskite thin films over large areas. Here, we show that very small amounts (tens of parts per million) of surfactants (for example, l-α-Phosphatidylcholine) dramatically alter the fluid drying dynamics and increase the adhesion of the perovskite ink to the underlying non-wetting charge transport layer. The additives enable blading of smooth perovskite films at a coating rate of 180 m h–1 with root-mean-square roughness of 14.5 nm over 1 cm. The surfactants also passivate charge traps, resulting in efficiencies over 20% for small-area solar cells. Fast blading in air of perovskite films results in stabilized module efficiencies of 15.3% and 14.6% measured at aperture areas of 33.0 cm2 and 57.2 cm2, respectively. Scaling up perovskite film deposition necessitates controlling the film formation dynamics. Here, Deng et al. use amphoteric choline surfactants to blade-coat well-passivated films, reaching module efficiencies of ~15% for aperture areas up to 57 cm2.

Review Article: Stress in thin films and coatings: Current status, challenges, and prospects

Abstract: The issue of stress in thin films and functional coatings is a persistent problem in materials science and technology that has congregated many efforts, both from experimental and fundamental points of view, to get a better understanding on how to deal with, how to tailor, and how to manage stress in many areas of applications. With the miniaturization of device components, the quest for increasingly complex film architectures and multiphase systems and the continuous demands for enhanced performance, there is a need toward the reliable assessment of stress on a submicron scale from spatially resolved techniques. Also, the stress evolution during film and coating synthesis using physical vapor deposition (PVD), chemical vapor deposition, plasma enhanced chemical vapor deposition (PECVD), and related processes is the result of many interrelated factors and competing stress sources so that the task to provide a unified picture and a comprehensive model from the vast amount of stress data remains very challenging. This article summarizes the recent advances, challenges, and prospects of both fundamental and applied aspects of stress in thin films and engineering coatings and systems, based on recent achievements presented during the 2016 Stress Workshop entitled “Stress Evolution in Thin Films and Coatings: from Fundamental Understanding to Control.” Evaluation methods, implying wafer curvature, x-ray diffraction, or focused ion beam removal techniques, are reviewed. Selected examples of stress evolution in elemental and alloyed systems, graded layers, and multilayer-stacks as well as amorphous films deposited using a variety of PVD and PECVD techniques are highlighted. Based on mechanisms uncovered by in situ and real-time diagnostics, a kinetic model is outlined that is capable of reproducing the dependence of intrinsic (growth) stress on the grain size, growth rate, and deposited energy. The problems and solutions related to stress in the context of optical coatings, inorganic coatings on plastic substrates, and tribological coatings for aerospace applications are critically examined. This review also suggests strategies to mitigate excessive stress levels from novel coating synthesis perspectives to microstructural design approaches, including the ability to empower crack-based fabrication processes, pathways leading to stress relaxation and compensation, as well as management of the film and coating growth conditions with respect to energetic ion bombardment. Future opportunities and challenges for stress engineering and stress modeling are considered and outlined.

Lead-Free Highly Efficient Blue-Emitting Cs3Cu2I5 with 0D Electronic Structure

Abstract: Halide perovskites, including CsPbX3 (X = Cl, Br, I), have gained much attention in the field of optoelectronics However, the toxicity of Pb and the low photoluminescence quantum yield (PLQY) of these perovskites hamper their use In this work, new halide materials that meet the requirements of: (i) nontoxicity, (ii) high PLQY, and (iii) ease of fabrication of thin films via the solution process are explored In particular, copper(I) halide compounds with low-dimensional electronic structures are considered Cs3 Cu2 I5 has a 0D photoactive site and exhibits blue emission (≈445 nm) with very high PLQYs of ≈90 and ≈60% for single crystals and thin films, respectively The large exciton binding energy of ≈490 meV explains well the 0D electronic nature of Cs3 Cu2 I5 Blue electroluminescence of Pb-free halides is demonstrated using solution-derived Cs3 Cu2 I5 thin films

Hybrid perovskite films approaching the radiative limit with over 90% photoluminescence quantum efficiency

Abstract: Reducing non-radiative recombination in semiconducting materials is a prerequisite for achieving the highest performance in light-emitting and photovoltaic applications. Here, we characterize both external and internal photoluminescence quantum efficiency and quasi-Fermi-level splitting of surface-treated hybrid perovskite (CH3NH3PbI3) thin films. With respect to the material bandgap, these passivated films exhibit the highest quasi-Fermi-level splitting measured to date, reaching 97.1 ± 0.7% of the radiative limit, approaching that of the highest performing GaAs solar cells. We confirm these values with independent measurements of internal photoluminescence quantum efficiency of 91.9 ± 2.7% under 1 Sun illumination intensity, setting a new benchmark for these materials. These results suggest hybrid perovskite solar cells are inherently capable of further increases in power conversion efficiency if surface passivation can be combined with optimized charge carrier selective interfaces. Surface treatment is shown to yield passivated perovskite films with very high quasi-Fermi level splitting and internal photoluminescence quantum efficiency, indicating that further improvements in the performance of perovskite optoelectronics should be feasible.

Efficient two-terminal all-perovskite tandem solar cells enabled by high-quality low-bandgap absorber layers

Abstract: Multi-junction all-perovskite tandem solar cells are a promising choice for next-generation solar cells with high efficiency and low fabrication cost. However, the lack of high-quality low-bandgap perovskite absorber layers seriously hampers the development of efficient and stable two-terminal monolithic all-perovskite tandem solar cells. Here, we report a bulk-passivation strategy via incorporation of chlorine, to enlarge grains and reduce electronic disorder in mixed tin–lead low-bandgap (~1.25 eV) perovskite absorber layers. This enables the fabrication of efficient low-bandgap perovskite solar cells using thick absorber layers (~750 nm), which is a requisite for efficient tandem solar cells. Such improvement enables the fabrication of two-terminal all-perovskite tandem solar cells with a champion power conversion efficiency of 21% and steady-state efficiency of 20.7%. The efficiency is retained to 85% of its initial performance after 80 h of operation under continuous illumination. Two-terminal monolithic all-perovskite tandem solar cells are attractive due to their flexible nature and low-cost fabrication. Here the authors develop a process to obtain high-quality Sn–Pb perovskite thin films by incorporating chlorine. Such layers are employed to fabricate 20.7%-efficient tandem cells with 80 h operational stability.

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.

Abstract: Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Record Efficiency Stable Flexible Perovskite Solar Cell Using Effective Additive Assistant Strategy

Abstract: Even though the power conversion efficiency (PCE) of rigid perovskite solar cells is increased to 22.7%, the PCE of flexible perovskite solar cells (F-PSCs) is still lower. Here, a novel dimethyl sulfide (DS) additive is developed to effectively improve the performance of the F-PSCs. Fourier transform infrared spectroscopy reveals that the DS additive reacts with Pb2+ to form a chelated intermediate, which significantly slows down the crystallization rate, leading to large grain size and good crystallinity for the resultant perovskite film. In fact, the trap density of the perovskite film prepared using the DS additive is reduced by an order of magnitude compared to the one without it, demonstrating that the additive effectively retards transformation kinetics during the thin film formation process. As a result, the PCE of the flexible devices increases to 18.40%, with good mechanical tolerance, the highest reported so far for the F-PSCs. Meanwhile, the environmental stability of the F-PSCs significantly enhances by 1.72 times compared to the device without the additive, likely due to the large grain size that suppresses perovskite degradation at grain boundaries. The present strategy will help guide development of high efficiency F-PSCs for practical applications.

Two-Dimensional Ruddlesden–Popper Perovskite with Nanorod-like Morphology for Solar Cells with Efficiency Exceeding 15%

Abstract: Two-dimensional (2D) Ruddlesden–Popper perovskites have shown great potential for application in perovskite solar cells due to their appealing environmental stability However, 2D perovskites generally show poor photovoltaic performance Here, a new type of 2D perovskite using 2-thiophenemethylammonium (ThMA+) as a spacer cation was developed and high photovoltaic performance as well as enhanced stability in comparison with its 3D counterpart was demonstrated The use of the 2D perovskite (ThMA)2(MA)n−1PbnI3n+1 (n = 3) in deposited highly oriented thin films from N,N-dimethylformamide using a methylammonium chloride (MACl) assisted film-forming technique dramatically improves the efficiency of 2D perovskite photovoltaic devices from 174% to over 15%, which is the highest efficiency for 2D perovskite (n < 6) solar cells so far The enhanced performance of the 2D perovskite devices using MACl as additive is ascribed to the growth of a dense web of nanorod-like film with near-single-crystalline quality, in

Interstitial Mn2+-Driven High-Aspect-Ratio Grain Growth for Low-Trap-Density Microcrystalline Films for Record Efficiency CsPbI2Br Solar Cells

Abstract: It is imperative to develop a large-aspect-ratio grain-based thin film with low trap density for high-performance inorganic perovskite CsPbI2Br solar cells. Herein, by using Mn2+ ion doping to modulate film growth, we achieved CsPbI2Br grains with aspect ratios as high as 8. It is found that Mn2+ ions insert into the interstices of the CsPbI2Br lattice during the growth process, leading to suppressed nucleation and a decreased growth rate. The combination aids in the achievement of larger CsPbI2Br crystalline grains for increased JSC values as high as 14.37 mA/cm2 and FFs as large as 80.0%. Moreover, excess Mn2+ ions passivate the grain boundary and surface defects, resulting in effectively decreased recombination loss with improved hole extraction efficiency, which enhances the built-in electric field and hence increases VOC to 1.172 V. As a result, the champion device achieves stabilized efficiency as high as 13.47%, improved by 13% compared with only 11.88% for the reference device.

Exploration of Crystallization Kinetics in Quasi Two-Dimensional Perovskite and High Performance Solar Cells.

Abstract: Halide perovskites with reduced-dimensionality (e.g., quasi-2D, Q-2D) have promising stability while retaining their high performance as compared to their three-dimensional counterpart. Generally, they are obtained in (A1)2(A2)n−1PbnI3n+1 thin films by adjusting A site cations, however, the underlying crystallization kinetics mechanism is less explored. In this manuscript, we employed ternary cations halides perovskite (BA)2(MA,FA)3Pb4I13 Q-2D perovskites as an archetypal model, to understand the principles that link the crystal orientation to the carrier behavior in the polycrystalline film. We reveal that appropriate FA+ incorporation can effectively control the perovskite crystallization kinetics, which reduces nonradiative recombination centers to acquire high-quality films with a limited nonorientated phase. We further developed an in situ photoluminescence technique to observe that the Q-2D phase (n = 2, 3, 4) was formed first followed by the generation of n = ∞ perovskite in Q-2D perovskites. These...

Understanding Film Formation Morphology and Orientation in High Member 2D Ruddlesden–Popper Perovskites for High-Efficiency Solar Cells

Abstract: 2D Ruddlesden–Popper (RP) perovskites have recently emerged as promising candidates for hybrid perovskite photovoltaic cells, realizing power-conversion efficiencies (PCEs) of over 10% with technologically relevant stability. To achieve solar cell performance comparable to the state-of-the-art 3D perovskite cells, it is highly desirable to increase the conductivity and lower the optical bandgap for enhanced near-IR region absorption by increasing the perovskite slab thickness. Here, the use of the 2D higher member (n = 5) RP perovskite (n-butyl-NH3)2(MeNH3)4Pb5I16 in depositing highly oriented thin films from dimethylformamide/dimethylsulfoxide mixtures using the hot-casting method is reported. In addition, they exhibit superior environmental stability over thin films of their 3D counterpart. These films are assembled into high-efficiency solar cells with an open-circuit voltage of ≈1 V and PCE of up to 10%. This is achieved by fine-tuning the solvent ratio, crystal growth orientation, and grain size in the thin films. The enhanced performance of the optimized devices is ascribed to the growth of micrometer-sized grains as opposed to more typically obtained nanometer grain size and highly crystalline, densely packed microstructures with the majority of the inorganic slabs preferentially aligned out of plane to the substrate, as confirmed by X-ray diffraction and grazing-incidence wide-angle X-ray scattering mapping.

Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity.

Abstract: van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next-generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe2 /SnS2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe2 /SnS2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe2 /SnS2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 1013 Jones (Iph /Idark ratio of ≈106 ) and photoresponsivity of 244 A W-1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm-2 ).

Thermodynamically Stable Orthorhombic γ-CsPbI3 Thin Films for High-Performance Photovoltaics

Abstract: All-inorganic lead halide perovskites demonstrate improved thermal stability over the organic–inorganic halide perovskites, but the cubic α-CsPbI3 with the most appropriate bandgap for light harvesting is not structurally stable at room temperature and spontaneously transforms into the undesired orthorhombic δ-CsPbI3 Here, we present a new member of black-phase thin films of all-inorganic perovskites for high-efficiency photovoltaics, the orthorhombic γ-CsPbI3 thin films with intrinsic thermodynamic stability and ideal electronic structure Exempt from introducing organic ligands or incorporating mixed cations/anions into the crystal lattice, we stabilize the γ-CsPbI3 thin films by a simple solution process in which a small amount of H2O manipulates the size-dependent phase formation through a proton transfer reaction Theoretical calculations coupled with experiments show that γ-CsPbI3 with a lower surface free energy becomes thermodynamically preferred over δ-CsPbI3 at surface areas greater than 8600 m

Enhanced solar cell stability by hygroscopic polymer passivation of metal halide perovskite thin film

Abstract: Long-term device stability is one of the most critical issues that impede perovskite solar cell commercialization. Here we show that a thin layer of a functional hygroscopic polymer, poly(ethylene oxide), PEO, on top of the perovskite thin film, can make perovskite-based solar cells highly stable during operation and in a humid atmosphere. We prove that PEO chemically interacts with lead ions on the perovskite surface, and thus passivates undercoordinated defect sites. Importantly, defect healing by PEO not only results in an improvement of the photo-voltage but also makes the perovskite thin film stable. We demonstrate that the hygroscopic PEO thin film can prevent water inclusion into the perovskite film by screening water molecules, thus having a multi-functional role. Overall, such interface engineering leads to highly durable perovskite solar cells, which, in the presence of PEO passivation, retained more than 95% of their initial power conversion efficiency over 15 h illumination, under load, in ambient atmosphere without encapsulation. Our findings experimentally reveal the role of interface engineering in mastering the instability of perovskite materials and propose a general approach for improving the reliability of perovskite-based optoelectronic devices.

Ultrahigh Performance of Self-Powered β-Ga2O3 Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer

Abstract: We demonstrated an ultrahigh-performance and self-powered β-Ga2O3 thin film solar-blind photodetector fabricated on a cost-effective Si substrate using a high-temperature seed layer (HSL). The polycrystalline β-Ga2O3 thin film deposited with HSL shows high performance in the solar-blind region in comparison to the amorphous Ga2O3 thin film deposited without HSL. The zero-bias digitizing sensor prototype with an HSL produces a digitized output bit with deep UV (DUV) light that exhibits a high on/off (I254 nm/Idark) ratio of >103, a record-low dark current of 1.43 pA, and high stability and reproducibility over 100 cycles even after >2100 h. The photodetector shows minimum persistent photoconductivity and fast response in milliseconds. The photodetector yields a responsivity of 96.13 A W–1 with an external quantum efficiency of 4.76 × 104 at 5 V for 250 nm monochromatic light. The photodetector shows a high response to even a rare weak signal of DUV (44 nW/cm2). These values are the highest reported to date...

A 1300 mm2 Ultrahigh-Performance Digital Imaging Assembly using High-Quality Perovskite Single Crystals.

Abstract: By fine-tuning the crystal nucleation and growth process, a low-temperature-gradient crystallization method is developed to fabricate high-quality perovskite CH3 NH3 PbBr3 single crystals with high carrier mobility of 81 ± 5 cm2 V-1 s-1 (>3 times larger than their thin film counterpart), long carrier lifetime of 899 ± 127 ns (>5 times larger than their thin film counterpart), and ultralow trap state density of 6.2 ± 2.7 × 109 cm-3 (even four orders of magnitude lower than that of single-crystalline silicon wafers). In fact, they are better than perovskite single crystals reported in prior work: their application in photosensors gives superior detectivity as high as 6 × 1013 Jones, ≈10-100 times better than commercial sensors made of silicon and InGaAs. Meanwhile, the response speed is as fast as 40 µs, ≈3 orders of magnitude faster than their thin film devices. A large-area (≈1300 mm2 ) imaging assembly composed of a 729-pixel sensor array is further designed and constructed, showing excellent imaging capability thanks to its superior quality and uniformity. This opens a new possibility to use the high-quality perovskite single-crystal-based devices for more advanced imaging sensors.

Efficient Light-Emitting Diodes Based on in Situ Fabricated FAPbBr3 Nanocrystals: The Enhancing Role of the Ligand-Assisted Reprecipitation Process.

Abstract: In this paper, we reported the in situ fabrication of highly luminescent formamidinium lead bromide (FAPbBr3) nanocrystal thin films by dropping toluene as an anti-solvent during the spin-coating with a perovskite precursor solution using 3,3-diphenylpropylamine bromide (DPPA-Br) as a ligand. The resulting films are uniform and composed of 5-20 nm FAPbBr3 perovskite nanocrystals. By monitoring the solvent mixing of anti-solvent and precursor solution on the substrates, we illustrated the difference between the ligand-assisted reprecipitation (LARP) process and the nanocrystal-pinning (NCP) process. This understanding provides a guideline for film optimization, and the optimized films obtained through the in situ LARP process exhibit strong photoluminescence emission at 528 nm, with quantum yields up to 78% and an average photoluminescence lifetime of 12.7 ns. In addition, an exciton binding energy of 57.5 meV was derived from the temperature-dependent photoluminescence measurement. More importantly, we achieved highly efficient pure green perovskite based light-emitting diode (PeLEDs) devices with an average external quantum efficiency (EQE) of 7.3% (maximum EQE is 16.3%) and an average current efficiency (CE) of 29.5 cd A-1 (maximum CE is 66.3 cd A-1) by adapting a conventional device structure of ITO/PEDOT:PSS/TFB/perovskite film/TPBi/LiF/Al. It is expected that the in situ LARP process provides an effective methodology for the improvement of the performance of PeLEDs.

High-Performance Single-Crystalline Perovskite Thin-Film Photodetector.

Abstract: The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

Sputtering Physical Vapour Deposition (PVD) Coatings: A Critical Review on Process Improvement and Market Trend Demands

Abstract: Physical vapour deposition (PVD) is a well-known technology that is widely used for the deposition of thin films regarding many demands, namely tribological behaviour improvement, optical enhancement, visual/esthetic upgrading, and many other fields, with a wide range of applications already being perfectly established. Machining tools are, probably, one of the most common applications of this deposition technique, sometimes used together with chemical vapour deposition (CVD) in order to increase their lifespan, decreasing friction, and improving thermal properties. However, the CVD process is carried out at higher temperatures, inducing higher stresses in the coatings and substrate, being used essentially only when the required coating needs to be deposited using this process. In order to improve this technique, several studies have been carried out optimizing the PVD technique by increasing plasma ionization, decreasing dark areas (zones where there is no deposition into the reactor), improving targets use, enhancing atomic bombardment efficiency, or even increasing the deposition rate and optimizing the selection of gases. These studies reveal a huge potential in changing parameters to improve thin film quality, increasing as well the adhesion to the substrate. However, the process of improving energy efficiency regarding the industrial context has not been studied as deeply as required. This study aims to proceed to a review regarding the improvements already studied in order to optimize the sputtering PVD process, trying to relate these improvements with the industrial requirements as a function of product development and market demand.

Graphitic carbon nitride (g-C3N4) electrodes for energy conversion and storage: a review on photoelectrochemical water splitting, solar cells and supercapacitors

Abstract: Graphitic carbon nitride (g-C3N4) has emerged as one of the most promising photocatalysts due to its metal-free nature, abundance of raw material, and thermal physical–chemical stability. The breakthrough research studies in recent years have mostly been concentrated on the engineering of the intrinsic and morphological properties of g-C3N4-based photocatalysts in the framework of powder suspensions for artificial photosynthesis and environmental remediation. However, practical applications of g-C3N4-based electrodes and devices are still in the early stages of development due to challenging fabrication methods of g-C3N4 thin films. This review addresses the classification of diverse techniques to deposit g-C3N4-based thin films and explores a broad spectrum of applications pertinent to g-C3N4-based electrodes. Although this paper is principally focused on photoelectrochemical water splitting, other emerging applications of g-C3N4 in solar cells, electrocatalysts and supercapacitors are also reviewed. Lastly, further suggestions are posited for other potential applications, challenges and future orientations.

Alkali Metal Doping for Improved CH3NH3PbI3 Perovskite Solar Cells.

Abstract: Organic-inorganic hybrid halide perovskites are proven to be a promising semiconductor material as the absorber layer of solar cells. However, the perovskite films always suffer from nonuniform coverage or high trap state density due to the polycrystalline characteristics, which degrade the photoelectric properties of thin films. Herein, the alkali metal ions which are stable against oxidation and reduction are used in the perovskite precursor solution to induce the process of crystallization and nucleation, then affect the properties of the perovskite film. It is found that the addition of the alkali metal ions clearly improves the quality of perovskite film: enlarges the grain sizes, reduces the defect state density, passivates the grain boundaries, increases the built-in potential (Vbi), resulting to the enhancement in the power conversion efficiency of perovskite thin film solar cell.

Ultra-thin chips for high-performance flexible electronics

Abstract: Flexible electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance electronics has also increased because flexible and compact integrated circuits are needed to obtain fully flexible electronic systems. It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of flexible electronics.