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Thin-film bulk acoustic resonator

About: Thin-film bulk acoustic resonator is a research topic. Over the lifetime, 237 publications have been published within this topic receiving 3888 citations.


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PatentDOI
TL;DR: In this article, an annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q) of the acoustic resonator, and the active area is divided into two concentric areas; a perimeter or frame, and a central region.
Abstract: A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

239 citations

Patent
Ella Juha1
01 Oct 1997
TL;DR: In this paper, a method for amplitude modulating signals, and a circuit that operates in accordance with the method is presented, which includes a first step of applying a modulating low frequency signal having a time-varying voltage to a tunable resonator.
Abstract: A method for amplitude modulating signals, and a circuit that operates in accordance with the method. The method includes a first step of applying a modulating low frequency signal having a time-varying voltage to a tunable resonator. The tunable resonator exhibits parallel and series resonances at frequencies which shift as a function of the time-varying voltage. A second step includes applying an RF carrier signal having a frequency that is between the parallel resonant frequency and the series resonant frequency to the tunable resonator. In response thereto, the tunable resonator causes the RF carrier signal to be attenuated as a function of the time-varying voltage of the modulating low frequency signal. Also provided is a method for phase modulating signals, and a circuit that operates in accordance therewith. A first step includes applying a modulating low frequency signal having a time-varying voltage to a tunable resonator. The tunable resonator yields a maximum phase shift at one of a parallel resonant frequency and a series resonant frequency in response to the modulating low frequency signal. The amount of phase shift yielded is a function of a variation of the modulating low frequency signal voltage. A further step includes applying an RF carrier signal having a frequency that is substantially equal to the one of a parallel resonant frequency and a series resonant frequency. In response thereto, the tunable resonator phase shifts the RF carrier signal by the amount of phase shift yielded by the tunable resonator.

202 citations

Journal ArticleDOI
TL;DR: In this article, a shear mode thin film bulk acoustic resonator (FBAR) operating in liquid media together with a microfluidic transport system is presented, which has a resonance frequency of around 1.2 GHz and a Q value in water of around 150.
Abstract: A shear mode thin film bulk acoustic resonator (FBAR) operating in liquid media together with a microfluidic transport system is presented. The resonator has been fabricated utilizing a recently developed reactive sputter-deposition process for AlN thin films with inclined c-axis relative to the surface normal with a mean tilt of around 30°. The resonator has a resonance frequency of around 1.2 GHz and a Q value in water of around 150. Sensor operation in water and glycerol solutions is characterized. Theoretical analysis of the sensor operation under viscous load as well as of the sensitivity and stability in general is presented. The theoretical predictions are compared with experimental measurements. The results demonstrate clearly the potential of FBAR biosensors for the fabrication of highly sensitive low cost biosensors, bioanalytical tools as well as for liquid sensing in general.

162 citations

Patent
David L. Thompson1
09 Nov 2001
TL;DR: In this paper, a multichannel telemetry receiver for an implantable medical device (IMD) such as a cardiac pacemaker has an RF antenna coupled to a telemetry circuit that includes an out-of-band rejection filter comprising a thin film bulk acoustic resonator filter.
Abstract: A telemetry receiver for an implantable medical device (IMD) such as a cardiac pacemaker has an RF antenna coupled to a telemetry circuit that includes an out-of-band rejection filter comprising a thin film bulk acoustic resonator filter. The telemetry circuit includes an amplifier coupled to the thin film bulk acoustic resonator filter and a demodulator coupled to the amplifier. The filter, amplifier and demodulator are all fabricated on a common integrated circuit die. A multichannel telemetry receiver for an IMD has a plurality of thin film bulk acoustic resonator bandpass filters defining individual channels. Identification of a preferred data transmission channel for communication of programming data to the IMD is determined by obtaining samples of the signals being passed by each of a plurality of thin film bulk acoustic resonator bandpass filters that define individual channels and evaluating the samples to determine the noise level for each channel.

136 citations

PatentDOI
TL;DR: In this article, a pit is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed, and a sandwich structure comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) are disposed so as to stride over the pit.
Abstract: A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.

127 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20216
20207
201910
201816
201717
201613