Showing papers on "Thin-film transistor published in 2016"

Organic light-emitting display device

Abstract: An organic light-emitting display device includes: a substrate; a driving thin film transistor on the substrate; and a DAM at an outermost portion of the substrate, where the DAM includes an inorganic layer and includes a first metallic DAM. The first metallic DAM may include two or more metal layers spaced apart at a set interval.

Metal oxide semiconductor thin-film transistors for flexible electronics

Abstract: The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

Wafer-sized multifunctional polyimine-based two-dimensional conjugated polymers with high mechanical stiffness

Abstract: One of the key challenges in two-dimensional (2D) materials is to go beyond graphene, a prototype 2D polymer (2DP), and to synthesize its organic analogues with structural control at the atomic- or molecular-level. Here we show the successful preparation of porphyrin-containing monolayer and multilayer 2DPs through Schiff-base polycondensation reaction at an air-water and liquid-liquid interface, respectively. Both the monolayer and multilayer 2DPs have crystalline structures as indicated by selected area electron diffraction. The monolayer 2DP has a thickness of∼0.7 nm with a lateral size of 4-inch wafer, and it has a Young's modulus of 267±30 GPa. Notably, the monolayer 2DP functions as an active semiconducting layer in a thin film transistor, while the multilayer 2DP from cobalt-porphyrin monomer efficiently catalyses hydrogen generation from water. This work presents an advance in the synthesis of novel 2D materials for electronics and energy-related applications.

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Abstract: A non-volatile, flexible, three-terminal memory device with an unprecedented number of distinct levels is fabricated using photoswitchable diarylethenes blended with polymeric semiconductors.

Large-Scale Complementary Macroelectronics Using Hybrid Integration of Carbon Nanotubes and Oxide Thin-Film Transistors

Abstract: A method of fabricating a logic element, the method includes forming a p-type nanomaterial thin film transistor on a substrate, forming a n-type metal oxide thin film transistor on the substrate, and connecting the p-type nanomaterial thin film transistor to the n-type metal oxide thin film transistor to form the logic element. The logic element is a hybrid complementary logic element.

Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications.

Abstract: The increasing interest in flexible electronics and flexible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-film transistors used in active-matrix displays is considered. The change of electrical performance of thin-film semiconductor materials under mechanical stress is studied, including amorphous oxide semiconductors. This study comprises an experimental part, in which transistor structures are characterized under different mechanical loads, as well as a theoretical part, in which the changes in energy band structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the influence of the other transistor layers on the strain profile. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of flexible thin-film transistors is given, and the suitability of the different material classes for those applications is assessed.

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.

Abstract: The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages ( 400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells

Abstract: In this study, we present a novel application of thin magnesium fluoride films to form electron-selective contacts to n-type crystalline silicon (c-Si). This allows the demonstration of a 20.1%-efficient c-Si solar cell. The electron-selective contact is composed of deposited layers of amorphous silicon (∼6.5 nm), magnesium fluoride (∼1 nm), and aluminum (∼300 nm). X-ray photoelectron spectroscopy reveals a work function of 3.5 eV at the MgF2/Al interface, significantly lower than that of aluminum itself (∼4.2 eV), enabling an Ohmic contact between the aluminum electrode and n-type c-Si. The optimized contact structure exhibits a contact resistivity of ∼76 mΩ·cm(2), sufficiently low for a full-area contact to solar cells, together with a very low contact recombination current density of ∼10 fA/cm(2). We demonstrate that electrodes functionalized with thin magnesium fluoride films significantly improve the performance of silicon solar cells. The novel contacts can potentially be implemented also in organic optoelectronic devices, including photovoltaics, thin film transistors, or light emitting diodes.

Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors.

Abstract: Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V(-1) s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.

A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

Abstract: In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

Abstract: This study demonstrated the exfoliation of a two-dimensional (2D) β-Ga2O3 nano-belt and subsequent processing into a thin film transistor structure. This mechanical exfoliation and transfer method produces β-Ga2O3 nano-belts with a pristine surface as well as a continuous defect-free interface with the SiO2/Si substrate. This β-Ga2O3 nano-belt based transistor displayed an on/off ratio that increased from approximately 104 to 107 over the operating temperature range of 20 °C to 250 °C. No electrical breakdown was observed in our measurements up to VDS = +40 V and VGS = −60 V between 25 °C and 250 °C. Additionally, the electrical characteristics were not degraded after a month-long storage in ambient air. The demonstration of high-temperature/high-voltage operation of quasi-2D β-Ga2O3 nano-belts contrasts with traditional 2D materials such as transition metal dichalcogenides that intrinsically have limited temperature and power operational envelopes owing to their narrow bandgap. This work motivates the application of 2D β-Ga2O3 to high power nano-electronic devices for harsh environments such as high temperature chemical sensors and photodetectors as well as the miniaturization of power circuits and cooling systems in nano-electronics.

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.

Abstract: Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm2/V·s) at room temperature. In this work, we report the first radio frequency (RF) flexible top-gated (TG) BP thin-film transistors on highly bendable polyimide substrate for GHz nanoelectronic applications. Enhanced p-type charge transport with low-field mobility ∼233 cm2/V·s and current density of ∼100 μA/μm at VDS = −2 V were obtained from flexible BP transistor at a channel length L = 0.5 μm. Importantly, with optimized dielectric coating for air-stability during microfabrication, flexible BP RF transistors afforded intrinsic maximum oscillation frequency fMAX ∼ 14.5 GHz and unity current gain cutoff frequency fT ∼ 17.5 GHz at a channel length of 0.5 μm. Notably, the experimental fT achieved here is at least 45% higher than prior results on rigid substrate, which is attributed to the impr...

Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

Abstract: Flexible transparent display is a promising candidate to visually communicate with each other in the future Internet of Things era. The flexible oxide thin-film transistors (TFTs) have attracted attention as a component for transparent display by its high performance and high transparency. The critical issue of flexible oxide TFTs for practical display applications, however, is the realization on transparent and flexible substrate without any damage and characteristic degradation. Here, the ultrathin, flexible, and transparent oxide TFTs for skin-like displays are demonstrated on an ultrathin flexible substrate using an inorganic-based laser liftoff process. In this way, skin-like ultrathin oxide TFTs are conformally attached onto various fabrics and human skin surface without any structural damage. Ultrathin flexible transparent oxide TFTs show high optical transparency of 83% and mobility of 40 cm2 V−1 s−1. The skin-like oxide TFTs show reliable performance under the electrical/optical stress tests and mechanical bending tests due to advanced device materials and systematic mechanical designs. Moreover, skin-like oxide logic inverter circuits composed of n-channel metal oxide semiconductor TFTs on ultrathin, transparent polyethylene terephthalate film have been realized.

Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

Abstract: Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for pr...

Fully Printed Stretchable Thin-Film Transistors and Integrated Logic Circuits

Abstract: This paper reports intrinsically stretchable thin-film transistors (TFTs) and integrated logic circuits directly printed on elastomeric polydimethylsiloxane (PDMS) substrates. The printed devices utilize carbon nanotubes and a type of hybrid gate dielectric comprising PDMS and barium titanate (BaTiO3) nanoparticles. The BaTiO3/PDMS composite simultaneously provides high dielectric constant, superior stretchability, low leakage, as well as good printability and compatibility with the elastomeric substrate. Both TFTs and logic circuits can be stretched beyond 50% strain along either channel length or channel width directions for thousands of cycles while showing no significant degradation in electrical performance. This work may offer an entry into more sophisticated stretchable electronic systems with monolithically integrated sensors, actuators, and displays, fabricated by scalable and low-cost methods for real life applications.

High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates.

Abstract: Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

Abstract: Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H2O2) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In2O3) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In2O3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In2O3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm2 V–1 s–1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate with...

Improving Contact Interfaces in Fully Printed Carbon Nanotube Thin-Film Transistors.

Abstract: Single-walled carbon nanotubes (CNTs) printed into thin films have been shown to yield high mobility, thermal conductivity, mechanical flexibility, and chemical stability as semiconducting channels in field-effect, thin-film transistors (TFTs). Printed CNT-TFTs of many varieties have been studied; however, there has been limited effort toward improving overall CNT-TFT performance. In particular, contact resistance plays a dominant role in determining the performance and degree of variability in the TFTs, especially in fully printed devices where the contacts and channel are both printed. In this work, we have systematically investigated the contact resistance and overall performance of fully printed CNT-TFTs employing three different printed contact materials—Ag nanoparticles, Au nanoparticles, and metallic CNTs—each in the following distinct contact geometries: top, bottom, and double. The active channel for each device was printed from the dispersion of high-purity (>99%) semiconducting CNTs, and all pr...

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

Abstract: For the large-area fabrication of thin-film transistors (TFTs), a new conjugated polymer poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl] is developed to harvest ultrahigh-purity semiconducting single-walled carbon nanotubes. Combined with spectral and nanodevice characterization, the purity is estimated up to 99.9%. High density and uniform network formed by dip-coating process is liable to fabricate high-performance TFTs on a wafer-scale and the as-fabricated TFTs exhibit a high degree of uniformity.

Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics.

Abstract: Advancements in thin-film transistor (TFT) technology have extended to electronics that can withstand extreme bending or even folding. Although the use of ultrathin plastic substrates has achieved considerable advancement towards this end, free-standing ultrathin plastics inevitably suffer from mechanical instability and are very difficult to handle during TFT fabrication. Here, in addition to the use of a 1.5 μm-thick polyimide (PI) substrate, a 1.5 μm-thick PI film is also deposited on top of the TFT devices to ensure that the devices are located at the neutral plane of the two PI films for high folding stability. For mechanical support during TFT fabrication up to the deposition of the top PI film, the PI substrate is spin coated on top of a carrier glass that is coated with a mixture of carbon nanotubes (CNTs) and graphene oxide (GO). The mixture of CNT and GO facilitates mechanical detachment of the neutral plane (NP) TFTs from the carrier glass before they are transferred to a polydimethylsiloxane (PDMS) substrate as islands. Being located in the neutral bending plane, the NP TFT can be transferred to the PDMS without performance degradation and exhibit excellent mechanical stability after stretching the PDMS substrate up to a 25% elastic elongation.

High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

Abstract: As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V−1 s−1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.

High performance p-type NiOx thin-film transistor by Sn doping

Abstract: Major obstacles towards power efficient complementary electronics employing oxide thin-film transistors (TFTs) lie in the lack of equivalent well performing p-channel devices. Here, we report a significant performance enhancement of solution-processed p-type nickel oxide (NiOx) TFTs by introducing Sn dopant. The Sn-doped NiOx (Sn-NiOx) TFTs annealed at 280 °C demonstrate substantially improved electrical performances with the increase in the on/off current ratio (Ion/Ioff) by ∼100 times, field-effect mobility (μlin) by ∼3 times, and the decrease in subthreshold swing by half, comparing with those of pristine NiOx TFTs. X-ray photoelectron spectroscopy and X-ray diffraction results confirm that Sn atoms tend to substitute Ni sites and induce more amorphous phase. A decrease in density of states in the gap of NiOx by Sn doping and the shift of Fermi level (EF) into the midgap lead to the improvements of TFT performances. As a result, Sn-NiOx can be a promising material for the next-generation, oxide-based e...

X-Ray Detector-on-Plastic With High Sensitivity Using Low Cost, Solution-Processed Organic Photodiodes

Abstract: We made and characterized an X-ray detector on a 25- $\mu \text{m}$ -thick plastic substrate that is capable of medical-grade performance. As an indirect conversion flat panel detector, it combined a standard scintillator with an organic photodetector (OPD) layer and oxide thin-film transistor backplane. Using solution-processed organic bulk heterojunction photodiode rather than the usual amorphous silicon, process temperature is reduced to be compatible with plastic film substrates, and a number of costly lithography steps are eliminated, opening the door to lower production costs. With dark currents as low as 1 pA/mm $^{2}$ and sensitivity of 0.2 A/W the OPD also meets functional requirements: the proof-of-concept detector delivers high-resolution, dynamic images at 10 frames/s, and 200 pixels/in using X-ray doses as low as $3~\mu $ Gy/frame.

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

Abstract: We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

Abstract: The fabrication of water-induced amorphous high-k zirconium oxide (ZrOx) dielectrics has been proposed with the objective of achieving high performance and reducing costs for next generation displays. In this study, the as-prepared ZrOx thin films were fabricated by a sequential process, including a UV-assisted photochemical treatment and a thermal annealing process at temperatures lower than 300 °C. It is observed that the leakage current density of ZrOx thin films decreases, and the capacitance increases with increasing annealing temperatures. To verify the application possibilities of ZrOx thin films as gate dielectrics in complementary metal-oxide semiconductor (CMOS) electronics, both n-type In2O3 and p-type NiOx channel layers were integrated with ZrOx dielectrics and their corresponding electrical performances were examined. The In2O3/ZrOx thin film transistor (TFT) annealed at 250 °C exhibited a high electron mobility of 10.78 cm2 V−1 s−1, a small subthreshold swing of 75 mV dec−1, and a large on–off current ratio (Ion/Ioff) of around 106, respectively. Moreover, the p-type NiOx/ZrOx TFT exhibited an Ion/Ioff of 105 and a hole mobility of 4.8 cm2 V−1 s−1. It is noted that both n- and p-channel oxide TFTs on ZrOx could be operated at voltages lower than 4 V. The low-temperature fabrication process marks a great step towards the further development of low-cost, all-oxide CMOS electronics on flexible substrates.

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Abstract: Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type CuxO and NiOx channel layers and their implementation in TFT devices are reported. The optimized CuxO and NiOx TFTs were achieved at low annealing temperatures (∼300 °C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2/Si substrates, the TFT performance was further optimized by device engineering, employing high-k AlOx as the gate dielectric. The fully solution-processed NiOx/AlOx TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm2 V−1 s−1. Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements.

High-Performance Flexible Multilayer MoS2 Transistors on Solution-Based Polyimide Substrates

Abstract: Transition metal dichalcogenides (TMDs) layers of molecular thickness, in particular molybdenum disulfide (MoS2), become increasingly important as active elements for mechanically flexible/stretchable electronics owing to their relatively high carrier mobility, wide bandgap, and mechanical flexibility. Although the superior electronic properties of TMD transistors are usually integrated into rigid silicon wafers or glass substrates, the achievement of similar device performance on flexible substrates remains quite a challenge. The present work successfully addresses this challenge by a novel process architecture consisting of a solution-based polyimide (PI) flexible substrate in which laser-welded silver nanowires are embedded, a hybrid organic/inorganic gate insulator, and multilayers of MoS2. Transistors fabricated according to this process scheme have decent properties: a field-effect-mobility as high as 141 cm2 V−1 s−1 and an Ion/Ioff ratio as high as 5 × 105. Furthermore, no apparent degradation in the device properties is observed under systematic cyclic bending tests with bending radii of 10 and 5 mm. Overall electrical and mechanical results provide potentially important applications in the fabrication of versatile areas of flexible integrated circuitry.