Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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Patent•
18 Jul 2005TL;DR: In this article, it was shown that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet-layer uniformity of a-SiNx:H films.
Abstract: We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface off a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4 / NH3 / N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
154 citations
TL;DR: In this paper, a reduction in dislocation density from 10 10 to 10 9 cm -2 is observed for LT-AIN interlayers which can be further improved using monolayer thick Si x N y in situ masking and subsequent lateral overgrowth.
154 citations
TL;DR: In this article, the authors report on the device characteristics of amorphous indium gallium zinc oxide thin-film transistors (TFTs) with aluminum (Al) electrodes.
Abstract: We report on the device characteristics of amorphous indium gallium zinc oxide thin-film transistors (TFTs) with aluminum (Al) electrodes. The TFTs exhibited a high performance with a field-effect mobility of 11.39 cm2/V s, a subthreshold swing of 181 mV/ decade, and an on-off ratio of 107. Further improvement in device performance was achieved by doping the source/drain contact regions, resulting in an enhanced mobility of 16.6 cm2/V s at an operating voltage as low as 5 V.
154 citations
Patent•
31 Mar 2014TL;DR: In this paper, a pixel circuit is proposed to prevent a spread of the terminal voltages of drive transistors inside a panel and in turn reliably prevent deterioration of uniformity, where pixel circuit lines are connected by an upper line and bottom line and are arranged in parallel with pixel circuit power source voltage lines so as not to have intersecting parts.
Abstract: A pixel circuit able to prevent a spread of the terminal voltages of drive transistors inside a panel and in turn able to reliably prevent deterioration of uniformity, wherein a source of a TFT serving as a drive transistor is connected to an anode of a light emitting element, a drain is connected to a power source potential, a capacitor is connected between a gate and source of the TFT, and a source potential of the TFT is connected to a fixed potential through a TFT serving as a switch transistor and wherein pixel circuit lines are connected by an upper line and bottom line and are arranged in parallel with pixel circuit power source voltage lines so as not to have intersecting parts.
154 citations
154 citations