Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Field-effect detection of chemical species with hybrid organic/inorganic transistors

Abstract: In this letter, we demonstrate that organic-based transistors are able to detect charged/uncharged chemical species in aqueous media via the field effect. The chemical sensitivity of the organic transistors is illustrated for protons and glucose. The electrochemical potential developed at the solution/dielectric interface depends on the proton concentration in solution and it modifies the current flowing in the transistor according to this concentration. Glucose can also be detected if an enzymatic layer is coupled to the dielectric surface. An inorganic proton-sensitive dielectric, Ta2O5, is used in the transistor structure in order to reduce the operational voltages. The field-effect detection of chemical species allows us to realize sensors for a variety of ions/molecules if layers with a specific functionality are added to the transistor. Organic-based sensing devices show great potential for low-cost, health-related, and environmental applications because of their very simple fabrication process, whi...

Nonvolatile semiconductor memory and process of producing the same

Abstract: A nonvolatile semiconductor memory of an aspect of the present invention comprises a semiconductor substrate, a pillar-shaped semiconductor layer extending in the vertical direction with respect to the surface of the semiconductor substrate, a plurality of memory cells arranged in the vertical direction on the side surface of the semiconductor layer and having a charge storage layer and a control gate electrode, a first select gate transistor arranged on the semiconductor layer at an end of the memory cells on the side of the semiconductor substrate, and a second select gate transistor arranged on the semiconductor layer on the other end of the memory cells opposite to the side of the semiconductor substrate, wherein the first select gate transistor includes a diffusion layer in the semiconductor substrate and is electrically connected to the pillar-shaped semiconductor layer by way of the diffusion layer that serves as the drain region.

Oxide thin film transistor and method of fabricating the same

Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring in contact with the active layer is made of a metal material having excellent contact characteristics and the other remaining second data wiring is made of a metal material having excellent conductivity, so as to be utilized to a large-scale oxide TFT process. Also, the first and second data wirings may be formed together by using half-tone exposure, simplifying the process.

Nonvolatile memory cell comprising switchable resistor and transistor

Abstract: A rewriteable nonvolatile memory cell is taught comprising a thin film transistor and a switchable resistor memory element in series. The switchable resistor element decreases resistance when subjected to a set voltage magnitude applied in a first direction, and increases resistance when subjected to a reset voltage magnitude applied in a second direction opposite the first. In preferred embodiments the memory cell is formed in an array, preferably a monolithic three dimensional memory array in which multiple memory levels are formed above a single substrate. In preferred embodiments a thin film transistor and a switchable resistor memory element are electrically disposed between a data line and a reference line which are parallel. Preferably a select line extending perpendicular to the data line and reference line controls the transistor.