Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Solution Processing of Inorganic Materials

Abstract: Preface. Contributors. 1. Introduction to Solution-Deposited Inorganic Electronics (Robert H. Reuss and Babu R. Chalamala). 1.1 Background and Motivation. 1.2 Importance of Solution Processing. 1.3 Application Challenges: TFT Devices and Circuits. 1.4 Application Challenges: Optoelectronics. 1.5 Application Challenges: Power Sources, Sensors, and Actuators. 1.6 Conclusions. References. 2. Chemical Solution Deposition-Basic Principles (Robert W. Schwartz and Manoj Narayanan). 2.1 Introduction. 2.2 Substrate Surface Preparation. 2.3 Starting Reagents and Solvents. 2.4 Precursor Solution Preparation and Characteristics. 2.5 Film Formation Behavior. 2.6 Structural Evolution: Film Formation, Densifi cation, and Crystallization. 2.7 Summary. References. 3. Solution Processing of Chalcogenide Semiconductors via Dimensional Reduction (David B. Mitzi). 3.1 Introduction. 3.2 Dimensional Reduction. 3.3 Hydrazine Precursor Route. 3.4 Similar Approaches without Hydrazine. 3.5 Future Prospects. References. 4. Oxide Dielectric Films for Active Electronics (Douglas A. Keszler, Jeremy T. Anderson, and Stephen T. Meyers). 4.1 Introduction. 4.2 Gate Dielectric Materials Selection. 4.3 Producing High-Quality Films from Solution. 4.4 HafSOx Thin-Film Dielectrics. 4.5 AlPO Thin-Film Dielectric. 4.6 Compositionally Graded and Laminated Structures. 4.7 Summary and Perspective. References. 5. Liquid Silicon Materials (Masahiro Furusawa and Hideki Tanaka). 5.1 Introduction. 5.2 Liquid Silicon Material. 5.3 Forming Silicon Films from the Liquid Silicon Materials. 5.4 Fabrication of a TFT Using a Solution-Processed Silicon Film. 5.5 Fabrication of TFT Using Inkjet-Printed Silicon Film. 5.6 Forming SiO2 Films from the Liquid Silicon Materials. 5.7 LTPS Fabrication Using Solution-Processed SiO2 Films. 5.8 Forming Doped Silicon Films. 5.9 Conclusions. Acknowledgments. References. 6. Spray CVD of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials (Aloysius F. Hepp, Kulbinder K. Banger, Michael H.-C. Jin, Jerry D. Harris, Jeremiah S. McNatt, and John E. Dickman). 6.1 Introduction. 6.2 Single-Source Precursor Studies. 6.3 Spray or Atmosphere-Assisted CVD Processing. 6.4 Atmospheric Pressure Hot-Wall Reactor Parametric Study. 6.5 Fabrication and Testing of CIS Solar Cells. 6.6 Concluding Remarks. Acknowledgments. References. 7. Chemical Bath Deposition, Electrodeposition, and Electroless Deposition of Semiconductors, Superconductors, and Oxide Materials (Raghu Bhattacharya). 7.1 Introduction. 7.2 Chemical Bath Deposition. 7.3 Deposition of CIGS by Electrodeposition and Electroless Deposition. 7.4 Electrodeposition of Oxide Superconductors. 7.5 Electrodeposition of Cerium Oxide Films. 7.6 Electrodeposition of Gd 2 Zr 2 O 7 . References. 8. Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution-Phase Deposition Techniques (Seppo Lindroos and Markku Leskela). 8.1 Introduction. 8.2 SILAR. 8.3 Materials Grown by SILAR. 8.4 ILGAR. 8.5 ECALE. 8.6 Other Sequential Solution-Phase Deposition Techniques. References. 9. Evaporation-Induced Self-Assembly for the Preparation of Porous Metal Oxide Films (Bernd Smarsly and Dina Fattakhova-Rohlfing). 9.1 Introduction. 9.2 The EISA Process. 9.3 Characterization of Self-Assembled Films. 9.4 Generation of Mesoporous Crystalline Metal Oxide Films Via Evaporation-Induced Self-Assembly. 9.5 Electronic Applications. 9.6 Mesoporous Films in Dye-Sensitized Solar Cells. 9.7 Conclusions. References. 10. Engineered Nanomaterials as Soluble Precursors for Inorganic Films (Dmitri V. Talapin). 10.1 Introduction. 10.2 Synthesis of Inorganic Nanomaterials. 10.3 Nanoparticles as Soluble Building Blocks for Inorganic Films. 10.4 Films and Arrays of Inorganic Nanowires. 10.5 Applications Using Networks and Arrays of Carbon Nanotubes. 10.6 Concluding Remarks. Acknowledgments. References. 11. Functional Structures Assembled from Nanoscale Building Blocks (Yu Huang). 11.1 Introduction. 11.2 Building Blocks: Synthesis and Properties. 11.3 Hierarchical Assembly of Nanowires. 11.4 Nanowire Electronics and Optoelectronics. 11.5 Nanowire Thin-Film Electronics-Concept and Performance. 11.6 Summary and Perspective. References. 12. Patterning Techniques for Solution Deposition (Paul Brazis, Daniel Gamota, Jie Zhang, and John Szczech). 12.1 Introduction. 12.2 Opportunities for Printable Inorganic verses Organic Materials Systems. 12.3 Printing and the Microelectronics Industry-Present and Future. 12.4 Printed Electronics Value Chain. 12.5 Electrically Functional Inks. 12.6 Printing Technologies. 12.7 Structure of a Printed Transistor. 12.8 Patterning Techniques for Solution Deposition: Technology Diffusion. 12.9 Conclusions. References. 13. Transfer Printing Techniques and Inorganic Single-Crystalline Materials for Flexible and Stretchable Electronics (Jong-Hyun Ahn, Matthew A. Meitl, Aflred J. Baca, Dahl-Young Khang, Hoon-Sik Kim, and John A. Rogers). 13.1 Introduction. 13.2 Inorganic Single-Crystalline Semiconductor Materials for Flexible Electronics. 13.3 Transfer Printing Using an Elastomer Stamp. 13.4 Flexible Thin-Film Transistors that Use mus-Sc on Plastic. 13.5 Integrated Circuits on Plastic. 13.6 mus-Sc Electronics on Rubber. 13.7 Conclusion. References. 14. Future Directions for Solution-Based Processing of Inorganic Materials (M. F. A. M. van Hest and D. S. Ginley). 14.1 Introduction. 14.2 Materials. 14.3 Deposition Approaches. 14.4 Next Generation of Applications. 14.5 Conclusions. References. Index.

Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device

Abstract: A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.

Method of making an organic thin film transistor

Abstract: A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10-3 cm2 /Vs and a conductivity less than about 10-6 S/cm at 20° C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.

Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6 gas

Abstract: This paper investigated the recrystallization of low‐pressure chemical vapor deposition amorphous silicon (a‐Si) films deposited using Si2H6 gas at various substrate temperatures. The grain size of recrystallized films formed from Si2H6 is larger than that formed from SiH4. The maximum grain size is obtained at the substrate temperature of 460 °C, where the nucleation rate is minimum due to the maximum structural disorder of the Si network. The structural disorder is increased not only by lowering the substrate temperature but also by increasing the deposition rate. The field effect mobility of thin‐film transistors (TFTs) using the recrystallized films reaches 120 cm2 V−1 s−1, even though the highest temperature during the TFT fabrication process is only 600 °C.

Synthesis, Solubility, and Field-Effect Mobility of Elongated and Oxa-Substituted α,ω-Dialkyl Thiophene Oligomers. Extension of “Polar Intermediate” Synthetic Strategy and Solution Deposition on Transistor Substrates

Abstract: Our investigation of thiophene oligomers as organic thin film transistor (TFT) semiconductors is extended to the hexamer with dodecyl and octadecyl end-substituents and with side chains containing ethereal oxygens. Two thiophene tetramers are studied as well. All of the new compounds are prepared via polar, monosubstituted half-oligomers that are purified, further elaborated, and dimerized. Properties are reported in comparison with the previously reported dihexyl compounds. All of the compounds form ordered films with orientation perpendicular to the substrate. For the hexamers, the longer chains decrease the TFT mobility of evaporated films, while the oxygens have very little electronic effect, even though the oxygen does cause an approximate doubling of the solubility. A tetramer with an ether side chain has a mobility below 0.01 cm2/Vs. Films were also cast from dilute solution and showed mobilities at or above 0.01 cm2/Vs in several cases. This casting process may be useful in devising all-liquid-pha...