Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

Abstract: We report on low-voltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100-nm-thick Al2O3 grown by atomic layer deposition as the gate dielectric layer. The Al2O3 gate dielectric shows very small current densities and has a capacitance density of 81±1 nF/cm2. Due to a very small contact resistance, transistors with channel lengths ranging from 100 μm down to 5 μm yield a channel-independent, field-effect mobility of 8±1 cm2/V s, subthreshold slopes of 0.1±0.01 V/decade, low threshold voltages of 0.4±0.1 V, and high on-off current ratios up to 6×107 (W/L=400/5 μm) at 5 V.

Stretchable, Transparent Zinc Oxide Thin Film Transistors

Abstract: Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.

A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

Abstract: In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

Low-voltage organic thin-film transistors with large transconductance

Abstract: We have developed an organic thin-film transistor (TFT) technology that aims at providing a good balance of static and dynamic performance parameters. An inverted staggered (bottom-gate, top-contact) device structure with patterned metal gates, a room-temperature-deposited gate dielectric providing a capacitance of 0.7μF∕cm2, and vacuum-deposited pentacene as the semiconductor were employed. The TFTs have a channel length of 10μm, a carrier mobility of 0.4cm2∕Vs, an on/off current ratio of 107, a subthreshold swing of 100mV/decade, and a transconductance per channel width of 40μS∕mm. Ring oscillators operate with supply voltages as low as 2V and with signal propagation delays as low as 200μs per stage.

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

Abstract: Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37cm2∕Vs, a threshold voltage of 0.1V, a subthreshold swing of 0.25V/decade, and an Ion∕off ratio of 7.