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Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.


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Journal ArticleDOI
Do Kyung Hwang1, Min Suk Oh1, Jung-Min Hwang1, Jae-Hoon Kim, Seongil Im 
TL;DR: In this article, the electrical stability of organic poly-4-vinyl phenol (PVP)/inorganic oxide bilayer gate dielectrics for lowvoltage pentacene thin-film transistors (TFTs) was studied.
Abstract: We have studied the electrical stability of organic poly-4-vinyl phenol (PVP)/inorganic oxide bilayer gate dielectrics for low-voltage pentacene thin-film transistors (TFTs). Curing conditions of spin-cast PVP influence on the drain current-gate bias hysteresis behavior; long term curing reduces the magnitude of the hysteresis, which can also be reduced by decreasing the PVP thickness. The electron charge injection from gate electrode plays as another cause of the electrical hysteresis. These instabilities are categorized into the following three: channel/dielectric interface-induced, slow polarization-induced, and gate charge injection-induced hystereses. By examining the hysteresis behavior of pentacene TFTs with five different combinations of bilayer dielectric, we clarified the instability mechanisms responsible for the electrical hysteresis.

133 citations

Journal ArticleDOI
TL;DR: In this paper, a polycrystalline-silicon transistor (poly-Si TFT) backplane for liquid crystal displays (LCDs) with integrated drivers was fabricated using a low-temperature process (below 425/spl deg/C).
Abstract: In order to realize electronic devices on plastic film, new technology has been developed that enables the transfer of thin-film devices from an original substrate to another substrate by using laser irradiation. This technology was termed SUFTLA, which stands for surface-free technology by laser annealing. A polycrystalline-silicon thin film transistor (poly-Si TFT) back-plane for liquid crystal displays (LCDs) with integrated drivers was fabricated using a low-temperature process (below 425/spl deg/C) and could be successfully transferred from a glass or quartz substrate to plastic film using this technology. This technology enabled us to fabricate an all-plastic substrate TFT-LCD having a display area of 0.7 in measured diagonally and a pixel count of 428/spl times/238. In addition, the operation of the integrated drivers and the displayed image could be confirmed for the first time in the world.

133 citations

Journal ArticleDOI
TL;DR: In this paper, a transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers were fabricated and the AZTO active layer was deposited by rf magnetron sputtering at room temperature.
Abstract: We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 109.

133 citations

Journal ArticleDOI
TL;DR: The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.
Abstract: We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.

133 citations

Journal ArticleDOI
TL;DR: The results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics and allow us to precisely model how the molecular packing changes the transport and contact properties.
Abstract: Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm2/Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C8-BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties.

133 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023341
2022918
2021640
20201,333
20192,015
20182,080