Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Thin film transistor and method of manufacturing the same, and flat panel display device having thin film transistor

Abstract: PROBLEM TO BE SOLVED: To provide a thin film transistor that uses an oxide semiconductor as an active layer, to provide a method of manufacturing the same, and to provide a flat panel display device having the thin film transistor. SOLUTION: The thin film transistor includes: an oxide semiconductor layer formed on a substrate and having a channel region, a source region, and a drain region; a gate electrode insulated from the oxide semiconductor layer by a gate insulating layer; an ohmic contact layer formed on the source region and the drain region of the oxide semiconductor layer; and a source electrode and a drain electrode respectively coupled to the source region and the drain region through the ohmic contact layer, wherein the ohmic contact layer is formed of a metal having a lower work function than work functions of the source electrode and the drain electrode. COPYRIGHT: (C)2010,JPO&INPIT

Liquid crystal display panel and fabricating method thereof

Abstract: A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads

Controlled orientation of liquid-crystalline polythiophene semiconductors for high-performance organic thin-film transistors

Abstract: The silane self-assembled monolayer (SAM) modification of a SiO2 gate dielectric surface improved the molecular ordering of organic channel semiconductor in organic thin-film transistors (OTFTs), leading to a significant improvement in transistor performance. Mobility of up to 0.18cm2∕Vs (current on∕off ratio of 107) was obtained for OTFTs with a liquid-crystalline polythiophene semiconductor built on an octyltrichlorosilane-modified SiO2 gate dielectric layer, a 450 times improvement over those built on a nonmodified dielectric layer. The mobility enhancement was attributed to the edge-on orientation of the polythiophene molecules induced by the silane SAM layer as deduced from the crystal domain structures in the atomic force microscopic images.

Shift register unit and gate drive device for liquid crystal display

Abstract: A shift register unit and a gate drive device for a liquid crystal display are disclosed. Both gate and drain of the tenth thin film transistor are connected to the source of the fifth thin film transistor, a source thereof is connected to a low voltage signal input terminal, threshold voltages of the eighth thin film transistor and the ninth thin film transistor are equal to or less than threshold voltage of the tenth thin film transistor. The shift register unit and the gate drive device for liquid crystal display provided in the present invention, could enable the thin film transistor used to suppress the noise in the shift register unit to maintain turning on, therefore it guarantees the reliability of the shift register unit.

Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes.

Abstract: Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for flexible and wearable electronics. However, it usually suffers from low semiconducting tube purity, low device yield, and the mismatch between p- and n-type TFTs. Here, we report low-voltage and high-performance digital and analog CNT TFT circuits based on high-yield (19.9%) and ultrahigh purity (99.997%) polymer-sorted semiconducting CNTs. Using high-uniformity deposition and pseudo-CMOS design, we demonstrated CNT TFTs with good uniformity and high performance at low operation voltage of 3 V. We tested forty-four 2-µm channel 5-stage ring oscillators on the same flexible substrate (1,056 TFTs). All worked as expected with gate delays of 42.7 ± 13.1 ns. With these high-performance TFTs, we demonstrated 8-stage shift registers running at 50 kHz and the first tunable-gain amplifier with 1,000 gain at 20 kHz. These results show great potentials of using solution-processed CNT TFTs for large-scale flexible electronics. Carbon nanotube thin-film transistor is promising for solution-processed, large-scale flexible electronics, but the device yields remain poor to date. Lei et al. show low-voltage flexible digital and analog circuits based on high-purity and high-yield separation of semiconducting carbon nanotubes.